DIODE E 1210 Search Results

BB142

Abstract: SG 46 a DIODE SMD diode PH 12 SMD diode sg 46
Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB142 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB142

bb143

Abstract: SMD diode sg 46 Diode smd code sg SG 46 a DIODE SMD st smd diode VU
Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB143 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB143

Diode smd code sg

Abstract: BB141 diode sg 69
Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB141 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB141

SMD diode sg 46

Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB151 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB151

SMD-247

Abstract: NEMA FR-4
Contextual Info: Bulletin 12106 International S R e ctifie r 4o e ps.s s e r ie s SURFACE MOUNTABLE INPUT RECTIFIER DIODE Description/Features The 40EPS.S rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used

diode SMD t01

Abstract: Diode IOR 10 dc 20ETS 20ETS08 20ETS12 20ETS16 SMD-220 ScansUX34 diode SMD t01 st Ford f 150
Contextual Info: Bulletin 12101 International i? Rectifier 2 oets. s e rie s INPUT RECTIFIER DIODE v F < 1V@ 10A = 300A ^FSM Description/Features T he 20ETS. rectifier series has been optim ized V,RRM 800 to 1600V for v e ry low forw ard vo lta g e drop, w ith m oderate

Contextual Info: DISCRETE SEMICONDUCTORS P Â T Â S ln lE E T BAS216 High-speed switching diode 1999 Apr 22 Product specification Supersedes data of 1996 Apr 03 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed switching diode

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 Philips S e m ico n d u cto rs 1999 May 11 PHILIPS Philips Semiconductors Product specification High-speed double diode BAV99W FEATURES

CH-8152

Abstract: 40EPS 40EPS08 40EPS12 40EPS16 60788 ScansUX33
Contextual Info: Bulletin 12104 International [IQRRectifier 40EPS. SERIES INPUT RECTIFIER DIODE I Description/Features T h e 4 0 E P S rectifie r series has been o p tim ize d fo r ve ry low fo rw a rd v o lta g e drop w ith m od e ra te leakage. T he glass passivation te ch no lo g y used

ingaas apd preamp receiver -20 1.25

Abstract: M1550
Contextual Info: DATA SHEET NEC R E C E IV E R M O D U LE NDL5522P ELECTRON DEVICE InGaAs AVALANCHE PHOTO DIODE FOR 2.5 Gb/s BUTTERFLY MODULE W ITH MULTIMODE FIBER INTERNAL PRE-AM PLIFIER DESCRIPTION NDL5522P is an InGaAs APD 6-pin butterfly package module incorporating silicon preamplifier 1C. It is especially designed

Contextual Info: Bulletin 12101/A International [ïü] Rectifier 2oets. s e r ie s INPUT RECTIFIER DIODE t ! Desc ri pti o n/Featu res The 20ETS. rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

diode RP 4040

Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Contextual Info: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t

Contextual Info: m U ER E X CDD11210 CDD11610 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D io d e POW-R-BLOK Modules 100 Amperes/1200-1600 Volts Description: O UTLINE DRAWING TO CDD11210, CDD11610 Dual Diode POW-R-BLOK™ Modules

smd diode L39

Abstract: SMD diode marking L39 SMD IC marking 632
Contextual Info: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BAS316 High-speed diode Product specification Supersedes data of 1998 Jan 08 File under Discrete Semiconductors, SC01 Philips Semiconductors 1998 Mar 26 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

Contextual Info: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m ­ m u n icatio n s and various o th er types o f optical e q u ip m en t.

Contextual Info: Green Power Solutions srl Via Venezia 34D - 10088 Volpiano TO , Italy Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Low profile ceramic package Spot welding applications Electroplating applications

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

GPS GPDD012K

Abstract: GPDD012K
Contextual Info: Green Power GPS - Green Power Semiconductors SPA Factory: Via Ungaretti 10, 16157 Genova, Italy Semiconductors Phone: +39-010-667 1307 Fax: +39-010-667 2459 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Suitable for high forward current

CW317

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 1 D L 2 C 4 1 Unit in mm O S W IT C H IN G T Y P E P O W E R S U PP LY A P P L IC A T IO N . O C O N V E R T E R & C H O P P E R A P P L IC A T IO N . • • • Repetitive Peak Reverse Voltage : Vr r m = 200V

GPDD012K

Contextual Info: Green Power Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Semiconductors Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDD012K RECTIFIER DIODE Low profile ceramic package Spot welding applications

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in