DIODE ED 68 Search Results

Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and

DSAIH0002570

Contextual Info: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135

DSAIH0002548

Abstract: 1N314
Contextual Info: B K C INTERNATIONAL 03E ] | HVTTöB □□00175 ‘i £ _ Type No. 1N314_ T - * t - o 7 G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 Tele Fax (617) 681-9135

V23134-A1052-X299

Abstract: "Power Relay"
Contextual Info: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

diode in40

Abstract: K2P0037-27-33
Contextual Info: K2P0037-27-33 OKI electronic components OCS30 Optical PNPN Switches GENERAL DESCRIPTION The OCS30 is an optical sw itch form ed by com bining an infrared light em itting diode a n d a PN PN elem ent {photothyristor that can w ith stan d high voltages. The device is encased in an 8-pin plastic

Contextual Info: TLP750 GaAßAs IRED a PHOTO-IC Unit in mm DIGITAL LOGIC GROUND ISOLATION. LINE RECEIVER. MICROPROCESSOR S Y S T E M IN TER FACES. SW I T CHI NG PO^ER SUPPLY F E ED BAC K CONTROL. ANALOG SIGNAL ISOLATION. The Toshiba TLP750 consists of GaA2,As high-output light emitting diode and a high speed detector of

12sR7

Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Contextual Info: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

ECH41

Abstract: FAF42 advantages automatic phase changer eaf42 isl 58781 ECH 42 DIODE RK 69 DIODE RECTIFIER press fit EL41 eaf transformer
Contextual Info: EAF 42 EAF 4 2 EAF 41 Diode-Pentode H i Fiff. 1 N o rm a l a n d X - r a y p h o to s o f th e E A F 42 (a p p r o x im a te ly a c tu a l ,«izs). T he E A F 42 is a d iode-pentode h av in g variab le-m u characteristics, and can be tised w ith a sliding screen grid voltage ; th e p en tode section is in ten d ed

ixan0002

Abstract: 0002 ixan0002 2 ixan0002 4 SCHEMATIC 10kw POWER SUPPLY WITH IGBTS VERIDUL M power factor correction boost topology veridul dc-dc power converter IGBT 10kW Single phase power factor correction
Contextual Info: IXAN0002 Single and Three Phase Recti ers with Active Power Factor Correction for Enhanced Mains Power Quality Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180 D { 68619 Lampertheim www.ixys.net Abstract Johann W. Kolar Swiss Federal Institute of Technology ETH Zurich

IHD 680 AI

Abstract: Zen Research IN4007 CH1 3W Ihd 680 an
Contextual Info: CONCEPT IHD 215/ 280/ 680 Data Sheet& A pplicatbn M a n u a l Intelligent Half-Bridge Drivers ib r E BTs and Pow erM 0 SEETs Description H ie in te llig e n t h a lf-b r id g e d riv e rs of th e IH D ty p e series h a v e been d e v e lo p e d specifically fo r th e reli­

diode smd ED 68

Abstract: transistor smd 4.z ttp 916
Contextual Info: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies

Contextual Info: SIEMENS STH 61008 G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2,5 Qblt/s Application Dimensions in inches mm .676 (17.21 .597 (15.2) max 0 .236 (6.0) 0] MD ÜË .806 (20.5) .688(17.5) El * Pinning m LD 1 77r (45.0)

IXAN0049

Abstract: igbt inverter schematic induction heating applications of blocking oscillator "bi-directional switches" IGBT induction heating oscillator circuit bi-directional switches IGBT IGBT based voltage source converter igbt for HIGH POWER induction heating Converter for Induction Heating schematic induction heating circuit
Contextual Info: IXAN0049 A New IGBT with Reverse Blocking Capability A. Lindemann IXYS Semiconductor GmbH Edisonstra e 15, D { 68623 Lampertheim www.IXYS.net Keywords Discrete Power Devices, Device applications, Device characterization, Devices, Matrix converters, MOS devices, New devices, Power semiconductor devices, Resonant converters, Resonantmode power supplies, Semiconductor devices, Soft switching, ZCS converters

nec527

Abstract: cascode miller capacitance AM685 MC1650
Contextual Info: Am 685 A New High-Speed Comparator the Am685 INTRODUCTION Modern electronic systems require more and more that operations be perform ed in a few nanoseconds so that the delay of the com plete system, which may be very complex, be held to a minimum. There are abundant logic

Contextual Info: ¿57 S G S -T H O M S O N ¡U È T O « S T P 6 N A 80 S T P 6 N A 8 0 FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP6NA80 STP6NA80FI 800 V 800 V R D S o n CO CO ED ED V d ss A A TYP E Id 5.7 A 3.4 A • TYPICAL RDS(on) = 1 68 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

syk 07

Abstract: ASP-601 diode sy 170/syk 07
Contextual Info: www.eLED.com Package Dimensions 3.2x1.6mm SMD CHIP LED LAMPS Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is ±0.2(0.0079") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

TIC 44 SCR

Abstract: SCR TIC 44 MTO thyristor unial
Contextual Info: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule

Contextual Info: SKiiP 37NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K:BU *: *: *:-_ $U P FE Q:N 0'7&11 .2 &%681& 1?& 858&4 $1 P FE ¥MT] Q:N $S P HET Q: $1 P FE ¥MT] Q:N $S P HME Q: 2? P H L1 K+BU Diode - Inverter MiniSKiiP 3

K3qa

Contextual Info: SKiiP 13NAB066V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J:BT *: *: *:._ $- N FEP:H 1'7&- /2 &%68-& -?& 858&4 $- N FE [¥L] P:H $S N OEL P: $- N FE [¥L] P:H $S N O¥E P: 2? N O K- J+BT Diode - Inverter, Chopper

DB618

Abstract: 235n
Contextual Info: A ugust 1992 Micro Linear ML2264 4-Channel High-Speed 8-Bit A/D Converter with T/H S/H GENERAL DESCRIPTION FEATURES T h e M L2264 is a hig h-sp eed, fjP co m p atib le , 4-ch ann el 8-bit A /D co n v e rte r w ith a co n ve rsio n tim e of 680ns o ve r the op eratin g te m p e ratu re range and su p p ly