DIODE ED 84 Search Results

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

Contextual Info: T UC T R O D A C EM EN a t P E r T L e E P t OL RE Ce n O B S E N D ED port l.com/tsc p u M S i l M nica w.inters ECO echData R Sheet O T w N w ur I L or act o cont -INTERS 8 1-88 Temperature Compensated Laser Diode Controller FEATURES • Compatible with Popular Fiber Optic Module

LT028

Abstract: LT022MC LT022PD LT027 LASER LT024MD LT022MC laser diode LT025 lt027 LT015MF LT022
Contextual Info: Laser Diode Quick Guides~ypicaI Characteristics x x x x x x x x x x x x x I x x x x x x Quick Guide I [ Model No. ~- - . -n .,. x ., Conformable to No.84zuud/ 01 FUA u >.A .- Wavelength (rim) 750 LT030 series LT021 series LT022 series ~“-: LT023 series

Contextual Info: MRT Device X co u w 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION ' = = The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the func­ tions needed for terminating two CCITT line rates, 8448

TXC-21055

Abstract: 1N4148 1N914 IN4148 IN914 TXC-02050 8448-kbit txc 24.5 G753
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

g745

Contextual Info: BACK MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

TXC-21055

Abstract: E2 hdb3 1N4148 1N914 IN4148 IN914 TXC-02050 nom401
Contextual Info: MRT Device 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SHEET FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the functions needed for terminating two CCITT line rates, 8448

m 841

Abstract: D291S
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties

D291S

Abstract: d291 3000a7 D841 D 841 S 45 T
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ø7 C A ø3,5± ø77 0,1 48- 0,1 Applikation: Beschaltungsdiode zu GTO - Vorrichtungen Application: Snubberdiode at GTO - Inverter VWK January Schnelle Gleichrichterdiode Fast Diode

Contextual Info: APT80M60J 600V, 84A, 0.055 N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

D291S

Abstract: m 841 3000a7
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties

TXC-02054

Abstract: E2 hdb3 TXC-02054-MB uses of 0.1 MICROFARAD ceramic disk TXC-02054AIPL HDB3 nrz e2 1N4148 1N914 74ACT11244 PE-65966
Contextual Info: MRTE Device 8-, 34- Mbit/s Line Interface TXC-02054 FEATURES DESCRIPTION • 8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit E2/E3 MRTE Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T

Contextual Info: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,

txc 24.5

Abstract: E2 hdb3 TXC-21055 1N4148 1N914 AN-517 PE-65966 TXC-02050C ME502B A2917
Contextual Info: MRT Device 6-, 8-, 34- Mbit/s Line Interface TXC-02050C FEATURES DESCRIPTION • 6312/8448/34368 kbit/s line interface The TranSwitch Multi-rate Receive/Transmit MRT Line Interface is a CMOS VLSI device that provides the functions needed for terminating two ITU-T line rates,

Contextual Info: GP1600FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4337 - 4.2 DS4337 - 4.3 March 1998 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1600A C(CONT) 3200A C(PK) 190ns 840ns APPLICATIONS •

GP1200FSS12S

Contextual Info: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 841 S ∅ 75 14+-0.5 C ∅ 77 max. ∅ 48 A -0.1 2 center holes ∅ 3.5 x1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 841 S 45 T Elektrische Eigenschaften / Electrical properties

General Semiconductor diode marking sma

Abstract: ON SEMICONDUCTOR 613 top marking 293 1A444
Contextual Info: PRODUCT INFORMATION 840nm 1A444 VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet, ATM and general applications. It operates in multiple transverse and single longi­ tudinal mode, ensuring stable cou­

transistor 6cw

Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Contextual Info: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

8527

Abstract: marking 293 ON SEMICONDUCTOR 613 top marking 293 1A448 1A448A PIN diode 12 GHz
Contextual Info: PRODUCT INFORMATION 840nm 1A448 Datacom VCSB_ Laser Diode T h is V e rtic a l C a v ity S u rfa c e Emitting Laser is designed for Fibre Channel, Gigabit Ethernet and ATM applications. For eye safety, the opti­ cal pow er is attenuated to com ply with IEC Laser Class 1 requirements.

3416C

Contextual Info: M R T Devi ce 6-, 8-, 34-Mbit/s Line Interface TXC-02050 DATA SH EE T FE ATURES ^ DESCRIPTION • 6312/8448/34368 kbit/s line interface - The TranSwitch Multi-rate Receive/Transmit MRT device is a CMOS VLSI device that provides the func­ tions needed for terminating two CCITT line rates, 8448

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050