DIODE ED 8A Search Results

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

UFF 100 02

Abstract: TRANSISTOR tip122 MJD122 TIP122 transistor jt surface mount transistor mjd122
Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix)

sq-10a

Abstract: KSH117 TIP117
Contextual Info: KSH117 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

TRANSISTOR tip122

Abstract: KSH122 TIP122 Darlington NPN Silicon Diode
Contextual Info: KSH122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

KSH127

Abstract: TIP127
Contextual Info: KSH127 PNP SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)

1N 3000 DIODE

Abstract: 14R7 Scans-0017298 general electric
Contextual Info: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

1 watt diode

Abstract: .7E7 Scans-0017297
Contextual Info: TENTATIVE 7E7 I4E7 DATA TUNG-SOL D O U B LE-D IO D E PE N T ODE COATED U N I P O T E N T IA L CATHODE T -9 HEATER 2 iS 1 2 . 6 VOLT S 32 150 MA. AC OR DC ANY MOUNTING P O S I T I O N - |i 16 - MAX BOTTOM VIEW GL ASS BULB 8 L OC K - 1N P 1N B A S E 8AE THE 1 4 E 7 I S A CO MB IN ED REMOTE CUT OFF PENTODE AND DOUBLE D 1ODE DETECTOR

100 n M275V

Abstract: M275V CS5208 IC 711
Contextual Info: 8A LDO 3-Pin Adjustable Linear Regulator D escription The CS5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and provide the m inim um load current

Contextual Info: 8A LDO 3-Pin Adjustable Linear Regulator Description The CS5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and provide the minimum load current

Contextual Info: 8A LDO 5-Pin Adjustable Linear Regulator Description This n ew very low d ro p o u t reg u la­ tor is designed to p o w er the next generation of ad v anced m icroproces­ sors. To achieve very low dropout, the internal pass transistor is p o w ­ ered separately from the control cir­

CS-5208-1T3

Contextual Info: CS-5208-1 lì CS-5208-1 8A LDO 3-Pin Adjustable Linear Regulator Features D escription The CS-5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and

Contextual Info: CS-5208-1 8A LDO 3-Pin Adjustable Linear Regulator Description The CS-5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 45V. This adjustable device requires two external resis­ tors to set the output voltage and provide the minimum load current

Contextual Info: 8A LDO 3-Pin Adjustable Linear Regulator Description The CS-5208-1 linear regulator pro­ vides 8A at adjustable voltages from 1.25V to 4.5V. This adjustable device requires two external resis­ tors to set the output voltage and provide the minimum load current

Contextual Info: JSJ H A R R IS UU S E M I C O N D U C T O R FRL130D, FRL130R, FRL130H 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 8A, 100V, RDS on = 0.180Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

smd transistor xf

Abstract: Diode SMD ED 8A SMD 8A TRANSISTOR smd transistor 2p data smd diode ED 08 smd transistor 8A transistor smd z a diode ed 8a
Contextual Info: rzT ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V trr PRELIMINAY DATASHEET a- 50ns (typ) H -k 2.0V Vf (max) FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.

ED2A

Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRAFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS If av 8A V rrm 600 V (in series) V f (max) 2.6 V I RM (typ.) 4A FEATURES AND BENEFITS • ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING

Diode SMD ED 7ca

Abstract: alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT STTA806M alps 502 C
Contextual Info: / = 7 SGS-THOMSON S T T A 806M IL iO T * ! & _ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 600V trr 25ns (typ) 1.5 V V f (max) FEATURE&AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

smd transistor 2p data

Abstract: diode 500A 1200v smd transistor JJ
Contextual Info: rz T ^7# SGS-THOMSON M »iLiOT(s iOOS TURBOSWITCH ”A” STTA812G ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 8A V rrm 1200V (typ) 50ns (max) 2.0V trr Vf PRELIMINAY DATASHEET a -H -k FEATURES AND BENEFITS • ULTRA-FAST, AND NOISE-FREE RECOVERY.

SMD 8A TRANSISTOR

Abstract: Diode SMD ED 8A transistor SMD 8A TRANSISTOR 935 SMD smd transistor 8A fast recovery diode 1200v SMD smd transistor ed STTA812G
Contextual Info: STTA812G  TURBOSWITCHTM ”A” ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K K FEATURES AND BENEFITS ULTRA-FAST, AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: 600V 8A APT8DQ60KCT APT8DQ60KCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters

Contextual Info: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I f a v 8A V rrm 600 V (in series) V f (max) 2.6 V IRM (typ.) 4A FEATURES AND BENEFITS • ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING

mosfet morocco

Abstract: ad 152 transistor
Contextual Info: f Z T SGS-THOMSON ^ 7# M C ^ < m iO T s M K S T T A 8 1 2 D (I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 8A V rrm 1200V trr (typ) 50ns Vf (max) 2.0V PRELIMINARY DATA kH 4 - V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

STD10NM60ND

Abstract: 10NM60 10nm60n STD10NM60N STP10NM60ND STF10NM60ND 10nm6
Contextual Info: STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET with fast diode Features Order codes VDSS @TJmax RDS(on) max. PTOT ID STD10NM60ND STF10NM60ND TAB 3 70 W 650 V < 0.6 Ω 8A 1 3 25 W STP10NM60ND