DIODE ES MARKING Search Results

DIODE marking ED

Abstract: SOT223 Package
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M V7404T1 Silicon Hyper-Abrupt Ttining Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 tim es over a bias range of 2.0 to 10 volts. It provides tuning over

tic 122

Abstract: TIC 122 Transistor tic 115 TIC 122 Transistor datasheet BAS16 BAS16C
Contextual Info: SMALL SIGNAL SWITCHING DIODES BAS16 Features • S ilicon E pitaxial P lanar Diode · Fas t switching diode in cas e S OT-23, es pecially S OT -23 .122 3.1 .110 (2.8) s uited for automatic ins ertion. .016 (0.4) Top V iew Mechanic al Data .056 (1.43 ) .052 (1.33 )

s116l

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode BAS116LT1 This switching diode has the following features: • Motorola Preferred Device Low Lea kag e C urrent Applications • M edium S p e e d Switching Tim es • Available in 8 m m Tape and Reel Use BA S116LT1 to order the 7 inch /3,0 00 unit reel

Contextual Info: bbS3T31 Philips Semiconductors DD2bfl32 122 B i APX Product specification Low voltage avalanche diode PLVA400A N AUER PHILIPS/DISCRETE FEATUR ES DESCRIPTION • Very low dynamic impedance at low currents: approximately V£o of conventional series The PLVA400A series are silicon

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

diode RA 225 R

Contextual Info: r z 7 s c s m o M S O N ^ 7# M OiRKm iCTfM OgS BAT 46 SMALL SIGNAL SCHOTTKY DIODE D ES C R IPT IO N General purpose, metal to silicon diode featuring high breakdown voltage low turn-on voltage. A B S O L U T E RATING S limiting values Sym bol V P a ra m e te r

SG 21 DIODE SMD

Abstract: marking d87 smd diode marking sG smd diode marking sG 13 D86 smd smd diode D86 D87 SOT23 MARKING sg SOT23 diode smd marking e2 smd sot23 marking E3
Contextual Info: rz 7 Ä 7# SCS-THOMSON B A T 5 4 Ser i es SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD VOLTAGE DROP ■ EXTREMELY FAST SWITCHING ■ SURFACE MOUNT DEVICE BAT54 DESCRIPTION

RECTIFIER DIODES SGS

Contextual Info: PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI R CU I T S SERI E S DI O D ES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON. THYRISTORS GATE DRIVER CIRCUITS

p350j

Contextual Info: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » 2 -ES MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

Contextual Info: Central" CMPD7000 Semiconductor Corp. DUAL SILICON SWITCHING DIODE SERIES CONNECTION DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CM PD7000 type is an ultra-high speed silicon sw itching diod es m anufactured by the epitaxial planar process, in an epoxy molded

Contextual Info: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » -ES 2 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range

smd marking YF

Abstract: Diode marking m7 marking code YF diode smd m7 TU-101 TC-10 R3T marking diode smd marking code catalog max6532 D1FM3
Contextual Info: Schottky Barrier Diode Single Diode mtmm o u t lin e Package I 1F D1FM3 30V 5A 'C athode mark Feature r | l eS e -n • Small S M D • V f=0.46V • <5lR=0.1mA Unit I mm Weight 0.058k T yp m (M G> - H «g) • Low V f =0 .4 6 V • Low lR -0.1m A T yp e No.

BB147

Abstract: IL062
Contextual Info: Philips Semiconductors Product specification VHF variable capacitance diode BB147 FEA TU R ES • Ultra high ratio • Excellent matching to 2 % DMA Direct Matching Assembly • Very small plastic S M D package • C28: 2 .6 pF; ratio 40. A P P L IC A T IO N S

Contextual Info: * PRELIMINARY * MMAD1104 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 S w itc h in g D io d e A rra y F EA TU R ES • Dual 8 Diode Array • SOIC 14 pin Surface Mount Package • UL 94V-0 Flammability Classification

varistors 125-005

Contextual Info: S EM IC O N D U C T O R PG08HSUSC TECHNI CAL DATA Single Line TVS Diode for ESD Protection in P ortable Electronics Protection in Portable Electronics A pplications. y FEA TU R ES • 350 Watts peak pulse power tp=8/20//s • Transient protection for data lines to

Contextual Info: f Z Z SGS-THOMSON ^ 7# R STTA6006T V 1/2 TURBQSWITCH "A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns A2 Kl AI STTA6006T(V)1 1.5V Vf (max) ES HE K2 A2 Kl K2 A1 STTA6006T(V)2 FEATURES AND BENEFITS

ups numeric

Abstract: numeric ups 600 MSB6 MSB05
Contextual Info: M SB05 M SB1, M SB2, M SB4, M SB6, M SB8, M SB 10 Mien emiCorp. The diode experts SCOTTSDALE, AZ SANTA ANA. CA For more information call: 602 941-6300 FEA TU R ES • • • • • • • DUAL IN-LINE SUBMINIATURE PACKAGE (DIP] MACHINE tNSERTABLE MOLDED EPOXY PACKAGE

Contextual Info: S EM IC O N D U C T O R PG12GBTS6 TECHNI CAL DATA TVS Diode A rray for ESD Protection in P ortable E lectronics Protection in Portable Electronics A pplications. FEA TU R ES DIM • 350 Watts peak pulse power tp=8/20//s • Transient protection for data lines to

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

MPL860

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MPL860PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 60 Vo l t s CURRENT 8 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SPL540PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 5 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SPL840PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 8 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP

spl1040pt

Abstract: SPL1040
Contextual Info: CHENMKO ENTERPRISE CO.,LTD SPL1040PT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOL TA GE 40 Vo l t s CURRENT 10 A m p er es PROVISIONAL SPEC. APPLICATION * DC to DC Converters * Switch- Mode Power Supplies * Notbook PC FEATURE SMP * Sm al l S u r f ac e M o u n t i n g T y p e. SMP

Contextual Info: 1SV172 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 1 72 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. + 0 .5 2 .5 -0 .3 + 0 .2 5 .1 .5 -0 .1 5 c io ES 1 + 1 2 r-lO ÖÖ + I oo +I 1C MAXIMUM RATINGS Ta = 25°C □ 3 SYMBOL RATING 50 VR 50