DIODE ESM 15 Search Results

KDS121E

Abstract: transistor ESM 30
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC

marking H1

Abstract: BAW56T
Contextual Info: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current

Marking H2

Abstract: marking .H2 transistor ESM 30 BAV70T
Contextual Info: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current

transistor ESM 30

Abstract: kds221e
Contextual Info: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G H A 2 C 3 1 DIM A B MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +

ESM diode

Abstract: KDS121E
Contextual Info: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

esm power diodes

Abstract: KDS120E
Contextual Info: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES

ESM6045DV

Contextual Info: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

ESM3030DV

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7# M D œ m iC T IfM D Ig ESM 3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS

pnp transistor 1000v

Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A

TRANSISTOR BDX

Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T

diode ESM 15

Abstract: diode ESM 245-1000 diode ESM 244-600 ESM 244-600 diode 606 esm diodes ESM diode Diodes de redressement DIODE REDRESSEMENT esm 200
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types •o Vr r m ■ fsm 10 ms A (V) (A) 60 A / T ç g j g = 90 °C ESM ESM ESM ESM ESM 243- 50, 243-100, 243-200, 243-300, 243-400, (R) (R) (R) (R) (R) j = 165°C 1■ 60 A / Tçase = 90 °C

Contextual Info: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE

BUF 460 AV

Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C

diode esm

Contextual Info: S ic S G S—THOMSON « i D 1• T H O M S O N -C S F ? ci a ci 5 3 ? E S M MWieiAkl CCàil/*/MirM i m i mo DISCRETS DIVISION SEMICONDUCTEURS 000231b 2 4 4 -5 0 , R " " * ESM 244-600, (R) SU PER SW ITC H f a s t r e c o v e r y r e c t i f i e r d io d e s

diode ESM 134

Contextual Info: II LbS3131 D 0 n i a 3 1 D EVELO PM EN T DATA ESM6045A V ESM6045D(V) This data sheet coi. ains advance information and specifications are subject to change without notice. N AflER PHILIPS/DISCRETE E5E D T - 2 3 -3 5 “ S IL IC O N D A R LIN G T O N P O W E R T R A N S IS T O R S

relay 12 volt

Abstract: diode SM 88A 12 VOLT 2 AMP regulator diode ESM 15 MODEL SA 12 volt 10 amp relay 12 volt relay 100 volt 60 amp to 220
Contextual Info: features Four useful power rails in one package Rugged construction Universal mains input Overvoltage Protection on all 5 volt rails “ Off the shelf” availability description The "ESM" Series of System Power Units have been developed to meet the general requirements of hybrid analogue/digital systems

Contextual Info: N AMER PHILIPS/DISCRETE APX bbS3^31 DDEfibDD b3S b'lE D ESM3045A V ESM3045D(V) J V SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISO T O P package, intended for use in motor drives, converters, switch mode power supplies (SM PS) and uninterruptable power supplies (UPS).

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Contextual Info: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR

Contextual Info: ~ rs 7 S C S -T H O M S O N ^ 7# s QUAD COMPARATOR INTERFACE CIRCUIT • MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT :0 .3 V ■ OUTPUT CURRENT : 15 mA ■ LARGE SUPPLY VOLTAGE RANGE : + 10 V TO + 35 V . INTERNAL THERM AL PROTECTION ■ INPUT AND OUTPUT CLAMPING PROTEC­

SOT227B package

Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Contextual Info: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

J295

Abstract: BU705 BU705D
Contextual Info: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency