DIODE FOOTPRINT Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

BAS70L

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

1PS10SB63

Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a

BAS40L

Abstract: marking code s6 SOD-882L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

BAS70-07S

Abstract: BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

AD130

Abstract: D1107 AD1105
Contextual Info: M OTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode A rray s Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

MMAD1109

Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

PWM controller sot23-6

Abstract: MAX6601 video amplifier SOT23-6 maxim temp sensors analog design guide maxim analog design guide 12 3RD fan regulator using remote control MAX1618 MAX1619 maxim, analog design guide, interface MAX1669
Contextual Info: TEMP SENSORS Data Sheets • ANALOG DESIGN GUIDE Applications Notes • Free Samples System Thermal Management Problems? Maxim Can Solve Them! 12 Maxim Offers: • Smallest-Footprint Remote-Diode Temperature Sensor • Multichannel Remote-Diode Temperature Sensors

H24 SMD DIODE

Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

Contextual Info: DATA SHEET • SMS7621-040LF DIODE DATA SHEET SMS7621-040LF: 0402 Surface Mount Low Barrier Schottky Diode Applications • Sensitive detector circuits  Sampling circuits  Mixer circuits Features  Low Barrier Height  Industry-standard 0402 footprint

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD 323/SOT 23 footprints Applications Band switching in VHF-tuners Construction Silicon epitaxial planar

smd diode GW

Abstract: diode ESM 315 K451
Contextual Info: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =

MSU277

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD-323/SOT-23 footprints Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj=25℃