Tunnel diode
Abstract: MBD1057 DATASHEET TUNNEL DIODE "tunnel diode" MBD3057 TUNNEL DIODE spice model Characteristics curve of diode MBD2057 switch diode tunnel MBD-1057
Text: Spice Model for Metelics Tunnel Diode 1 Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. E1, R1, D2 and G1 model the reverse bias curve and the forward bias curve through the valley. D1 models the forward bias curve beyond the valley. The model does not accurately represent the negative differential
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MBD1057
MBD1057
3E-12
263E-6
3533E-3
688E-3
Tunnel diode
DATASHEET TUNNEL DIODE
"tunnel diode"
MBD3057
TUNNEL DIODE spice model
Characteristics curve of diode
MBD2057
switch diode tunnel
MBD-1057
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UX9401F
Abstract: UM9401F
Text: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available KEY FEATURES DESCRIPTION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its
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UM9401F
UX9401F
UM9401F
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Untitled
Abstract: No abstract text available
Text: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available KEY FEATURES DESCRIPTION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its
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UM9401F
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Untitled
Abstract: No abstract text available
Text: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-02V
OD-523
BAR64V-02V
OD-523
2002/95/EC
D-74025
29-Jun-05
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BAR64V-02V
Abstract: BAR64V-02V-GS08 BAR64V-02V-GS18 85643
Text: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-02V
OD-523
BAR64V-02V
OD-523
2002/95/EC
2002/96ed
08-Apr-05
BAR64V-02V-GS08
BAR64V-02V-GS18
85643
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18342
Abstract: No abstract text available
Text: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-02V
OD-523
BAR64V-02V
OD523
D-74025
12-Sep-03
18342
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hsch 3486 zero bias schottky diode
Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Text: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,
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HSCH-3486
HSMS-8101
5952-9823E
5963-0951E
hsch 3486 zero bias schottky diode
HSMS-2850
HSCH-3486
hsms-10-5
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BAR64V-02V
Abstract: BAR64V-02V-GS08 BAR64V-02V-GS18
Text: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-02V
OD-523
BAR64V-02V
OD523
D-74025
12-Dec-03
BAR64V-02V-GS08
BAR64V-02V-GS18
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Untitled
Abstract: No abstract text available
Text: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
BAR63V-03
95/EC
2002/96/EC
GS18/10
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available K EY FEAT U RES DESCRIPT ION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its
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UM9401F
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Untitled
Abstract: No abstract text available
Text: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
OT-23
BAR63V-03
D-74025
12-Sep-03
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BAR63V-03W
Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
2002/95/EC
2002/96/EC
08-Apr-05
BAR63V-03W-GS08
BAR63V-03W-GS18
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BAR63V-02V
Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
Text: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-02V
OD-523
BAR63V-02V
OD-523
2002/95/EC
2002/96/EC
D-74025
29-Jun-05
BAR63V-02V-GS08
BAR63V-02V-GS18
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BAR63V-03W
Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
2002/95/EC
2002/96/EC
18-Jul-08
BAR63V-03W-GS08
BAR63V-03W-GS18
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
OT-23
BAR63V-03
D-74025
15-Dec-03
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
D-74025
17-Sep-03
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BAR63V-03W
Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
OT-323
D-74025
24-Aug-04
BAR63V-03W-GS08
BAR63V-03W-GS18
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BAR63V-02V
Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
Text: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-02V
OD-523
BAR63V-02V
OD-523
D-74025
25-Aug-04
BAR63V-02V-GS08
BAR63V-02V-GS18
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BAR63V-03
Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Text: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
OT-23
BAR63V-03
OT-23
D-74025
24-Aug-04
BAR63V-03-GS08
BAR63V-03-GS18
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BAR63V-03
Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Text: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
OT-23
BAR63V-03
2002/95/EC
2002/96/EC
08-Apr-05
BAR63V-03-GS08
BAR63V-03-GS18
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Untitled
Abstract: No abstract text available
Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-02V
OD-523
BAR63V-02V
OD523
D-74025
12-Sep-03
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UM9701
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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Untitled
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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