DIODE FORWARD BIAS RESISTANCE Search Results

UM9701

Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design

Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design

Tunnel diode

Abstract: MBD1057 DATASHEET TUNNEL DIODE "tunnel diode" MBD3057 TUNNEL DIODE spice model Characteristics curve of diode MBD2057 switch diode tunnel MBD-1057
Contextual Info: Spice Model for Metelics Tunnel Diode 1 Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. E1, R1, D2 and G1 model the reverse bias curve and the forward bias curve through the valley. D1 models the forward bias curve beyond the valley. The model does not accurately represent the negative differential

UX9401F

Abstract: UM9401F
Contextual Info: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available KEY FEATURES DESCRIPTION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its

Contextual Info: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available KEY FEATURES DESCRIPTION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its

Contextual Info: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

BAR64V-02V

Abstract: BAR64V-02V-GS08 BAR64V-02V-GS18 85643
Contextual Info: BAR64V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

18342

Contextual Info: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

hsch 3486 zero bias schottky diode

Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Contextual Info: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,

BAR64V-02V

Abstract: BAR64V-02V-GS08 BAR64V-02V-GS18
Contextual Info: BAR64V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by low reverse Capacitance the PIN Diode BAR64V-02V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: UM9401F TM PIN DIODE SWITCHING DIODE-Ceramic Surface Mount RoHS Compliant Version Available K EY FEAT U RES DESCRIPT ION Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation, and wide bandwidth antenna switch performance. Its

Contextual Info: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03W

Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03W

Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03W

Abstract: BAR63V-03W-GS08 BAR63V-03W-GS18
Contextual Info: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-02V

Abstract: BAR63V-02V-GS08 BAR63V-02V-GS18
Contextual Info: BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAR63V-03

Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Contextual Info: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than