DIODE FR 105 Search Results

Contextual Info: MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery

sfp450h

Abstract: rf voltmeter circuit diagrams SFP-450H BFU450CN la1135 YT-30007 Murata sfp450h 2SC930 E LA1135 diagram mitsumi coil rf
Contextual Info: Ordering number: EN1272E Monolithic Linear IC LA1135, 1135M AM Tuner System for Car Radios and Home Stereos Overview The LA1135 is a high-performance AM electronic tuner IC that is greatly improved in cross modulation characteristics. It is especially suited for use in car radio and home stereo antenna:

100krads

Abstract: FRL6798D FRL6798H FRL6798M FRL6798R
Contextual Info: Radiation-Hardened MOSFETs F ile N u m b e r 2321 FRL6798M, FRL6798D, FRL6798R, FRL6798H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 5.5 A, 200 V I*D S (o n ) = 0.4 n TERMINAL DIAGRAM Features: • Linear transfer characteristics

SMMBD2837LT1G

Abstract: MA6 diode MARKING CODE MA6
Contextual Info: MMBD2837LT1G, MMBD2838LT1G, SMMBD2837LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−23 TO−236AB

NUP1301ML3T1G

Abstract: SZNUP1301ML3T1G
Contextual Info: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im

SBAS20HT1G

Abstract: BAS20HT
Contextual Info: BAS20HT1, SBAS20HT1G High Voltage Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMSD4148T1G

Abstract: SMMSD4148T1G MMSD4148T3G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Contextual Info: MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, SMMSD4148T3G Switching Diode http://onsemi.com Features •      SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

MMBD914LT1G

Abstract: SMMBD914LT1G
Contextual Info: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements

Contextual Info: Schottky Barrier Diode Twin Diode mwm DF40PC3 o u t lin e 30V 40A Feature • SMD • SMD • ÎS <6V f =0.4V • Ultra-Low Vf=0.4V • High lo Rating'Small-PKG Main Use • Reverse connect protection for DC power source • D C tti^ O R Œ • D C /D C o y <-•$>

Contextual Info: Ordering number : ENN*6495 CMOS IC LC898093 40x Playback/12× Write CD-R/RW Encoder/Decoder IC with Built-in ATAPI Interface Preliminary Package Dimensions unit: mm 3210-SQFP208 [LC898093] 156 0.5 30.6 28.0 105 104 157 208 53 1 0.5 0.2 0.15 52 (1.25) 3.8max

Contextual Info: I LASER DIODE INC n • a e S3ÖE^ ÖS DDD 0 4 ä i 3 I L A H 6 0 SERIES L D F -16 0 SERIES M H M 6 0 SERIES » I LASER DIODE, INC. T-W -dg LASER DIODE ARRAYS WITH FIBER INTEGRATORS FEATURES ► Square Source of Uniform Intensity Up to 100 Watts Peak Optical Power Output

00MGW

Abstract: 20-PIN SX18
Contextual Info: March, 2002 SX20AC/SX28AC Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability and On-Chip Debug 1.0 1.1 PRODUCT OVERVIEW Introduction enables the device to implement hard real-time functions as software modules Virtual Peripheral to replace traditional hardware functions.

22a ic

Abstract: IC22A 2SD2089 2482 npn
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 . 5 3 -6 ± 0 . 3 3 0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.

BSS123LT1G

Contextual Info: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel

Contextual Info: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •

DS0028

Contextual Info: FEA TU RES & • 2 0 -3 0 0 MHz ■ 0.65 dB Insertion Loss ■ Non-Reflective MODEL NO. DS0028 PIN Diode SP5T ■ TTL Driver SP5T ■ Small 24 Pin DIP ■ Low Cost RF2 20 RF3 18 RF COM 9 RF1 22 RF4 16 RF5 14 CONT 4 CONT 5 "0" "0" 24 PLACES 4 7 3 8 10 11 12 13 15 1 7 1 9 21 2 3 2 4

la1787

Abstract: diode D32-02 D32-02 DSP/Tuner LC75040 SDRS400 ctc d1-28 la1787 tuner IC51-0644-807 sanyo ctp
Contextual Info: Ordering number : E*NA0633A Bi-CMOS LSI LV25400W For Automotive Applications DSP Tuner Front End Overview The LV25400W is a tuner front end IC that supports the Sanyo SDRS400 car radio DSP. The LV25400W supports worldwide radio standards including the FM bands used in US, Europe, and Japan as well as the

acoustic filter 40khz

Abstract: sonar acoustic filter 40khz 818H8B 818H8E 818L8B 818L8D80 818L8E 818L8E-3 818L8E-5 818L8L
Contextual Info: 818 Series 1 kHz to 1.28 MHz 8-Bit Programmable 2" x 4" 8-Pole Filters Description The 818 Series are digitally programmable low-pass and high-pass active filters that are tunable over a 256:1 frequency range. 818 filters are available with any one of five standard factory-set tuning ranges or

Contextual Info: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode Chip position • SFH 234 S Common Cathode 2.0 s 0.45 i— L LO O Ni O OCO ct>ct> c o c o c d m* ^ rrfl 3 .0 j _14.5 12.5" 0.3max Radiant sensitive area 0.5x0.5mm each Approx. weight 1.5 g

a13483

Abstract: A1348
Contextual Info: Ordering number : ENN*6614A CMOS IC LC898023KW, 898023KL 40x Playback/16× Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions • • • • • • • • • • CD-ROM decoder/encoder functions CD decoder/encoder functions

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: r n m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. p KSC RPN M m D DmE Dm 23APR2013 LOGO CHANGE AM JC KZ MECHANICAL: A MATERIALS: HOU SING - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T IN G UL 9 ^ V - 0 . S H IE L D - .010" THICK, C 268 00 B R A S S P R E P L A T E D WITH 3 0n lN C H S E M I - B R I G H T

TRANSISTOR SMD MARKING CODE B7t

Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
Contextual Info: in tP ro BUZ104S tv e d * SIPMOS Power Transistor Product Summary Features « N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS V 55 ^DS on 0.08 ii b 13.5 A • du/df rated