DIODE FR 210 Search Results

Cystek

Abstract: MV4000 ZD5248
Contextual Info: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : Page No. : 1/12 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation

ZD5253

Abstract: ZD5221B ZD5222B ZD5223B ZD52XXBN3 ZD5226B marking 81J
Contextual Info: Spec. No. : C326N3 Issued Date : 2003.04.14 Revised Date : 2010.03.09 Page No. : 1/14 CYStech Electronics Corp. Zener Diode Series ZD52XXBN3 SOT-23 Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board TA=25°C, Derate above 25°C Total Device Dissipation

C124 EST

Abstract: transistor c124 C124 E S S transistor C124 E S W transistor IRGPC40FD2
Contextual Info: PD - 9.1113 International ïôr Rectifier IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = • Switching-loss rating includes all “tail" losses • H EX FR E D soft ultrafast diodes • Optimized for medium operating frequency 1 to

SS3001

Contextual Info: 1 F I 1 5 B - 6 1 5 Q a * ± a a a $ frf* - FAST RECOVERY DIODE MODULE • f ë J I ^ Features • a s m a e i n i ^ j s v .' • Short Reverse Recovery Time Variety of Connection Menu • Insulated Type ! A pplications Arc-W elders • 7 U —T fr- l —

Contextual Info: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2100 A KOM 2100 AF Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1070 nm KOM

diode b24a

Abstract: diode v3e Mitsubishi transistor QM600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

Contextual Info: SIEMENS BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate BSM150GB120DN2E3166 h 1200V 210A 111 Type Package Ordering Code HALF-BRIDGE 2

MA4SW110

Contextual Info: MA4SW110, MA4SW210, MA4SW310 M/A-COM Monolithic PIN Diode Switches A IÂ C G M M R F & Microwave Products Features • • • Borad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated

protective shroud

Abstract: 2B20 DRIVING A BI-COLOUR LED Circuit 10-2602.3205L EAO series 71 illumination led EAO 71 series led IEC 60947-5-5 ip67
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 84 Switches and Indicators 84 Contents 84 Description . 3 Product Assembly . 4

u212

Abstract: IRFR122 u210 irfr210 U2-12
Contextual Info: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

pin diagram of ic 74ls138

Abstract: IC 74ls138 and gate 74LS138
Contextual Info: SANYO SEMI CONDUCTOR CORP S S 1 8 I¡IB B ii LC74HC138M 1EE D 1 T'H TD Tb CT~fc7 -2-i - S S iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 - Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.

IC 74ls138

Abstract: pin diagram of ic 74ls138 CIH7 ic 74ls138 details TTL 74ls138 6ba diode and gate 74LS138 74LS138 LC74HC138 LC74HC138M
Contextual Info: SANYO SEMI CONDUCTOR CORP Ä llÜ lllllÄ LC74HC138M 1EE D 1 T'H TD Tb OH7-2-I-SS iß OG-QHtiflS CMOS High-Speed Standard Logic LC74HC Series 3035A - 3 to 8 -Line Decoder £ 2100A ' Features ' • The LC74HC138M decodes a three-bit address to one-of-eight active-low outputs.

Contextual Info: MA4SW110 MA4SW210 MA4SW310 Broadband Monolithic Silicon PIN Diode Switches Rev 5.0 Features MA4SW110 SPST • Broad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz • Low Insertion Loss / High Isolation • Rugged, Fully Monolithic, Glass Encapsulated

DFY2R902

Abstract: DFY2R902CR947BHG MuRata Gigafil XMFP1-M3 DFY21R88 DFY2R902CR947 DFC3r LFJ30-03 Ferrite Circulators at 15 ghz MQE9
Contextual Info: This is the PDF file of catalog No.K09E-4. No.K09E4.pdf 99.8.31 Murata Products for Mobile Communications GSM DCS1800 PCN E-TACS DECT CT-2 PCS (IS136) AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 PDC800 PDC1500 NTACS/CDMA PHS GSM CDMA E-TACS/AMPS PHS DECT

PSD300-200

Abstract: Power Snubber Diode
Contextual Info: SIYU R PSD300-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage

PSD200-200

Abstract: Power Snubber Diode
Contextual Info: SIYU R PSD200-200 功率缓冲二极管 Power Snubber Diode 1.特征 Features ● 小型化，高可靠性 Miniaturization，High Reliability ● 替代传统的 RCD 缓冲电路 Substitution traditional RCD snubber circuit ● 钳位电压稳定 Steady Clamping voltage

SWITCHPLEXER

Abstract: DFC2R MuRata Gigafil CE053R836DCB DFC31R DFY2R dfc3r881 CFUXC450 DFC21R89 LMC36
Contextual Info: This is the PDF file of catalog No.K09E-5. No.K09E5.pdf 00.1.31 Murata Products for Mobile Communications GSM DCS1800 E-TACS DECT CT-2 W-CDMA ISM2400 PCS IS136 AMPS/ADC PCS (GSM) CDMA800 PCS (CDMA) ISM900 ISM2400 PDC800 J-CDMA ISM2400 GSM CDMA PHS E-TACS AMPS DECT

Contextual Info: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode

A1049

Abstract: A10495 four-layer diode POWER AMPLIFIER CIRCUIT DIAGRAM 10000 HSOP28H ILA07171 capacitor mylar transistor 355 equivalent A1049 transistor
Contextual Info: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type

Contextual Info: DMV series DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS MODUL DAMPER I f a v 3A&6A 5A&6A V rrm 600 V 1500 V trr 50 ns 135 ns (max) 1.5 V 1.35 V Vf DAMPER MODULATION FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ ■ FULL KIT IN ONE PACKAGE

A1049

Abstract: TRANSISTOR A1049
Contextual Info: Ordering number : ENA1049 Monolithic Linear IC LA49101H Audio Output for TV Application 10Wx1ch High-Effciency Power Amplifier IC Overview The LA49101H is a high-effciency 1-channel 10W BTL monaural power amplifier IC. Increases in the number of external components are held to a minimum by adopting both a signal-following type

Contextual Info: NTTS2P03R2 Power MOSFET -2.48 Amps, -30 Volts P−Channel Enhancement Mode Single Micro8t Package Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery

G3VM-355C

Abstract: G3VM-355CR G3VM-355F G3VM-355FR 355C FR 152 diode
Contextual Info: MOS FET Relays G3VM-355C/CR/F/FR New MOS FET Relays with Both SPSTNO and SPST-NC Contacts Incorporated in a Single DIP Package. General-purpose Models Added. • SPST-NO/SPST-NC models now included in the 350-V load voltage series. • Continuous load current of 120 mA 90 mA .