DIODE FULL WAVE RECTIFIER BR 300 Search Results

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

2KV DIODE

Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical

Contextual Info: MSMCGLCE6.5A – MXLSMCGLCE170Ae3, MSMCJLCE6.5A – MXLSMCJLCE170Ae3 Available 1500 Watt Low Capacitance Surface Mount Transient Voltage Suppressor Screening in reference to MIL-PRF-19500 available DESCRIPTION This high-reliability surface mount Transient Voltage Suppressor TVS product family includes a rectifier

Contextual Info: PD-97271 RevA IRAM136-0461G Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives Description International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive

full wave BRIDGE RECTIFIER 1044

Abstract: igbt sinewave inverter ntc 10K B 3950 inverter 3kw schematic 3 phase ac sinewave motor controller single ic marking R1E AN-1044 AN1049 IR21365 IRAM136-0461G
Contextual Info: PD-97271 RevA IRAM136-0461G Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives Description International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive

IRGPS66160DPBF

Contextual Info: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding

Contextual Info: TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 0 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel

Contextual Info: IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6630DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 18A n-channel

IRKH162-14D20

Abstract: IRKH135-16D25
Contextual Info: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage

Contextual Info: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications

Bridge Rectifier, 35A, 600V

Contextual Info: IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 50A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6650DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 35A n-channel

Contextual Info: IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 60A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 48A E G G Gate C Collector Features Benefits High efficiency in a wide range of applications

Contextual Info: IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE Features • Low VCE ON Non Punch Through IGBT technology  Low Diode VF  10µs Short Circuit Capability  Square RBSOA  Ultra-soft Diode Reverse Recovery Characteristics

cii 117 q

Abstract: ic 5657
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

100A6

Abstract: IRGP4078DPBF
Contextual Info: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA

Contextual Info: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF

IRGP4740DPBF

Contextual Info: IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 24A E G G Gate C Collector Features C E IRGP4740D-EPbF TO-247AD

Contextual Info: IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF TO-247AC E n-channel Applications

Contextual Info: IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ max = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS

Contextual Info: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications

Contextual Info: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

suppressor 5v

Abstract: zener Transient Voltage Suppressor Transient Voltage Suppressor diode application note ICTE-10 ICTE-15 P4KE16A P6KE16A AP6KE
Contextual Info: SELECTING THE OPTIMUM VOLTAGE TRANSIENT SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.