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    DIODE GA100 Search Results

    DIODE GA100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GA100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CD laser pickup assembly

    Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
    Text: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output


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    PDF 635nm 650nm 780nm 120mA CD laser pickup assembly laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd

    Untitled

    Abstract: No abstract text available
    Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds


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    PDF GB100XCP12-227

    GH06560B2C

    Abstract: GH06560B2 2 Wavelength Laser Diode sharp sharp laser diode Sharp Hologram laser
    Text: LASER DIODE Issued on Jun. 10, 2002 Model GH06560B7C/GH06560B2C Sales & Marketing Group -Electronic Components & Devices Laser Diode for ✕4 speed DVD-R/-RW/+R/+RW/RAM Writing Low-aspect-ratio product • Features ■ Outline Dimensions ● Simplification of optical components is possible


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    PDF GH06560B7C/GH06560B2C GH06560B7C GH06560B2C GA100T8W1MZ 12-pin GH06560B2C GH06560B2 2 Wavelength Laser Diode sharp sharp laser diode Sharp Hologram laser

    Untitled

    Abstract: No abstract text available
    Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds


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    PDF GB100XCP12-227

    dvd pulse laser diode

    Abstract: GA100T8W1MZ GH06535A2B GH06535B2B GH06550B2B GH06570A2C Laser Diode for DVD-R dvd laser diode 10 pin 100 mw dvd rw diode 10 pin 100 mw dvd rw laser
    Text: Laser Diode Issued on Feb. 25, 2002 Model GH06570A2C Sales & Marketing Group -Electronic Components & Devices Laser Diode for ✕4 speed DVD-R/RW/+RW/RAM ● 21 3 0.4±0.1 Improved half intensity angle ellipticity : about 15 % +0 ø 5.6 – 0.025 Tc=25 °C


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    PDF GH06570A2C GH06550B2B GA100T8W1MZ dvd pulse laser diode GA100T8W1MZ GH06535A2B GH06535B2B GH06550B2B GH06570A2C Laser Diode for DVD-R dvd laser diode 10 pin 100 mw dvd rw diode 10 pin 100 mw dvd rw laser

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


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    PDF GA100SICP12-227 OT-227 Reduc00SIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: designfeature Deepak Veereddy, Device Engineer, Eric Lieser, Senior Field Applications Engineer Michael DiGangi, Chief Business Development Officer, GeneSiC Semiconductor, Inc. 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses A recently launched 1200 V


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    PDF GA100XCP12 55-kW com/micnotes/APT0408

    Untitled

    Abstract: No abstract text available
    Text: TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed to deliver high system efficiencies by a drastic reduction in the IGBT and FWD dynamic losses GeneSiC Semiconductor, Inc. has recently launched 1200 V IGBT copack products that


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    IRG41BC20W

    Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
    Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles


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    PDF O-220 IR2130 230VAC IR2133 460VAC IR2233 IR2137/IR2171 IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor

    GA100TS120K

    Abstract: ic tb 1245
    Text: PRELIMINARY GA100TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA100TS120K GA100TS120K ic tb 1245

    tig ac inverter circuit

    Abstract: tig welding machine IRF 100A tig welding tig ac inverter circuit 180 GA100TS60SF igbt qualification circuit 100a diode bridge Welding inverter up to 100A tig 180 inverter welding
    Text: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending


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    PDF I27201 GA100TS60SF tig ac inverter circuit tig welding machine IRF 100A tig welding tig ac inverter circuit 180 GA100TS60SF igbt qualification circuit 100a diode bridge Welding inverter up to 100A tig 180 inverter welding

    GA100TS60SF

    Abstract: No abstract text available
    Text: Bulletin I27201 07/05 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology Fred Pt Antiparallel diodes with Fast recovery Very Low Conduction Losses Industry Standard Package


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    PDF I27201 GA100TS60SF GA100TS60SF

    GA100TS60SF

    Abstract: No abstract text available
    Text: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending


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    PDF I27201 GA100TS60SF 08-Mar-07 GA100TS60SF

    igbt 100

    Abstract: GA100TS60SF GA100TS60SFPbF
    Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED PtTM antiparallel diodes with fast recovery


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    PDF GA100TS60SFPbF 18-Jul-08 igbt 100 GA100TS60SF GA100TS60SFPbF

    GA100NA60UP

    Abstract: ultrafast igbt information OF ic 7400
    Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA100NA60UP OT-227 18-Jul-08 GA100NA60UP ultrafast igbt information OF ic 7400

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF I27243 GA100TS120UPbF GA100TS120UPBF

    GA100TS60SFPbF

    Abstract: tig ac inverter circuit E78996 datasheet bridge tig IGBT module E78996 tig 180 inverter welding tig ac inverter circuit 180
    Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery


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    PDF GA100TS60SFPbF E78996 2002/95/EC 18-Jul-08 GA100TS60SFPbF tig ac inverter circuit E78996 datasheet bridge tig IGBT module E78996 tig 180 inverter welding tig ac inverter circuit 180

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    PDF GA100NA60UP E78996 2002/95/EC OT-227 18-Jul-08 GA100NA60UP

    GA100TS60SFPbF

    Abstract: tig 180 inverter welding GA100TS60SF
    Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED PtTM antiparallel diodes with fast recovery


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    PDF GA100TS60SFPbF 18-Jul-08 GA100TS60SFPbF tig 180 inverter welding GA100TS60SF

    GA100TS60SF

    Abstract: GA100TS60SFPbF
    Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Fred PT antiparallel diodes with fast recovery RoHS • Very low conduction losses COMPLIANT • Al2O3 DBC


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    PDF GA100TS60SFPbF 12-Mar-07 GA100TS60SF GA100TS60SFPbF

    ge 142

    Abstract: GA100TS60U
    Text: PD -50055C GA100TS60U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses


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    PDF -50055C GA100TS60U ge 142 GA100TS60U

    GA100TS60SF

    Abstract: GA100TS60SFPbF
    Text: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: Optimized for hard switching operating frequencies DC to 1 kHz RoHS COMPLIANT • FRED PT antiparallel diodes with fast recovery


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    PDF GA100TS60SFPbF 12-Mar-07 GA100TS60SF GA100TS60SFPbF