DIODE GATE Search Results
DIODE GATE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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| GT30N135SRA |
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IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 |
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| GT30J65MRB |
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IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) |
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| DFE2016CKA-2R2M=P2 | Murata Manufacturing Co Ltd | Fixed IND 2.2uH 1400mA NONAUTO |
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| LQW18CN85NJ0HD | Murata Manufacturing Co Ltd | Fixed IND 85nH 1400mA POWRTRN |
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DIODE GATE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
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OCR Scan |
CA3019 92CS-14254 10-Lead 92CS-15262 12-Lead CA3039 CA3019 ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate | |
LB1105M
Abstract: b073 LBX105M
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OCR Scan |
LB1105M LBX105M LB1105M b073 | |
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Contextual Info: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of |
OCR Scan |
LB1105M LB1105M 1260TA | |
diode number
Abstract: H07V-U terminal of diode
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Original |
H07V-U) LP5/10/90 EC001419 diode number H07V-U terminal of diode | |
C-150
Abstract: IRFI840G IRGIB6B60KD PD944
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Original |
PD-94427C IRGIB6B60KD O-220 IRFI840G O-220 C-150 IRFI840G IRGIB6B60KD PD944 | |
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Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
PD-95321 IRGIB6B60KDPbF O-220 O-220 | |
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Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A | |
C-150
Abstract: IRGIB6B60KD
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Original |
PD-94427D IRGIB6B60KD O-220 O-220 C-150 IRGIB6B60KD | |
transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
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IRGIB15B60KD1 O-220 IRFI840G O-220 transistor c 2335 C-150 IRFI840G IRGIB15B60KD1 | |
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Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
4385A IRGB5B120KD O-220 O-220AB IRF1010 | |
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Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGIB15B60KD1PbF O-220 O-220 | |
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Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
PD-94427A IRGIB6B60KD O-220 IRFI840G O-220 | |
C-150
Abstract: IRGIB10B60KD1P
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Original |
IRGIB10B60KD1P O-220 O-220 C-150 IRGIB10B60KD1P | |
IRGIB15B60KD1P
Abstract: C-150
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IRGIB15B60KD1P O-220 O-220 IRGIB15B60KD1P C-150 | |
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AN-994
Abstract: C-150 EIA-541 IRFR120
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IRGR3B60KD2PbF Contin18 EIA-481 EIA-541. EIA-481. AN-994 C-150 EIA-541 IRFR120 | |
420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
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Original |
IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A | |
diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
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PD-94576A IRGIB10B60KD1 O-220 Param99 IRFI840G O-220 diode 10a 400v 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1 | |
IGBT 60A 1200V
Abstract: IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr
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IRGB5B120KDPbF O-220 O-220AB O-220AB. O-220AB IGBT 60A 1200V IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr | |
TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
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Original |
PD-94576A IRGIB10B60KD1 O-220 IRFI840G O-220 TRANSISTOR BIPOLAR 400V 20A C-150 IRFI840G IRGIB10B60KD1 | |
C-150
Abstract: IRGIB10B60KD1P
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Original |
IRGIB10B60KD1P O-220 O-220 C-150 IRGIB10B60KD1P | |
C-150Contextual Info: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
PD-95321 IRGIB6B60KDPbF O-220 O-220 C-150 | |
IRGB5B120KDPBFContextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
IRGB5B120KDPbF O-220 O-220AB O-220AB IRGB5B120KDPBF | |
transistor irf 645
Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
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Original |
4601A IRGR3B60KD2 EIA-481 EIA-541. EIA-481. transistor irf 645 diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250 | |
C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
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Original |
PD-94427D IRGIB6B60KD O-220 O-220 C-150 IRGIB6B60KD ANSI PD-94427D | |