DIODE GC6 Search Results

Contextual Info: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . HIGH DC CURRENT GAIN . U.L. RECOGNISED ISOWATT218 PACKAGE

TC2004

Abstract: TC106 GC106 GC2005 GC107 TC307 TC2003 TC2005 MMBD1702 TC2006
Contextual Info: Surface Mount Switching Diodes Part No. TMPD6050 BAV70 BAV99 BAW56 BAV74 TMPD2835 MMBD1701 MMBD1702 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A BB804 BB814 BB824 CrossReference Marking Code Max. Cont. Reverse Current Maximum Diode Capacitance

Contextual Info: BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS:

Contextual Info: BU208D BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N . JEDECTO-3 METAL CASE . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE

MUD 112

Contextual Info: SGS-THOMSON M JD 112 MÜD117 1EL0 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL

MJDI12

Contextual Info: MJDI12 MJD117 SGS-THOMSON ¡Li @H gI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 (DPAK POWER PACKAGE IN TAPE & REEL

MAS9250C6UA06

Abstract: GC4 diode GC3 Coil MOSFET SAW MARKING CODE DO3314-103MXB 16 psk
Contextual Info: DA9250.003 11 November 2005 MAS9250 High Efficiency Synchronous Step-Down Switching Regulator • Efficiency up to 93% • Switching Frequency from 400 kHz to 2 MHz • No Schottky Diode Required • PWM, PFM and PSK Operations • Low Dropout Operation: 100% Duty Cycle

57RA

Contextual Info: s = 7 S G S -T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U LT118D HIGH VOLTAGE FAST-SWITCHING _ NPN POWER TRANSISTOR PRELIMINARY DATA . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: S G S -T H O M S O N RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR

Contextual Info: s = 7 S G S - T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U L D 1 1 8 D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

yx 861

Abstract: zener FR diode 2ao2 diode BAND
Contextual Info: n 1. v ï — v - n Package List m Discrete Semiconductor Devices — □ - V 'à •+- I "N « A te irv u m « -£ o K S *- « > fa’ V •fr -w Panasonic - 219 - il H Item S M ini 5-pin S M ini(4-pin) U n it mm 2 UP 1 .1 0 4251 -i 1 25 îO 1_ 0 425

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

Contextual Info: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> -   SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features                       

Contextual Info: IRFP460 N - CHANNEL 500V - 0.22 Q - 20 A - TO-247 PowerMESH MOSFET TYPE V dss IRFP460 500 V Id R D S o n < 0.27 a 20 A Q. • TYPICAL RDS(on) = 0.22 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

Contextual Info: SGS-THOMSON [M O ig œ ilL ie ra *® STP 38 N 06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss R d S oii Id STP38N06 60 V < 0.03 Q. 38 A (*) . TYPICAL RDs(on) = 0.026 £1 . AVALANCHE RUGGED TECHNOLOGY

STP8N10

Abstract: transistor BC 945
Contextual Info: fZ 7 ^ 7# S C S -T H O M S O N M e ^ lIL llC T M m iC i S T P 8 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP8N10 • . . . . . . . V dss R dS oii Id 100 V < 0.45 Q 8 A TYPICAL R ds(oii) = 0.4 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: S GS-THOMSON sgaMiLaCTtæratgs STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE I STP4NA80 STP4NA80FI • . ■ ■ . . . V dss R DS on Id 800 V 800 V <30 < 3 n A 2.5 A 4 TYPICAL Ros(on) = 2.4 Q ±30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON 3 [M O ig œ ilL ie ra *® STK NA 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STK3NA60 • . . . . . . V dss 600 V R dS oii < 4 a. Id 2.7 A TYPICAL RüS(on) = 3 .3 Cl ± 30V GATE TO SOURCE VOLTAGE RATING

3l4 diode

Contextual Info: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP10N10

Abstract: 0A95 73H2
Contextual Info: SGS-THOMSON ¿5 7 S T P IO N IO L S T P 10N 1OLFI ÍUI OT ül@Í N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP10N10L STP10N10LFI • . . . . . . . . Voss R D S (o n Id 100 V 100 V < 0.33 Q < 0.33 Q 10 A 7A TYPICAL RDS(on) = 0.26 Q

Contextual Info: STP9NA50 STP9NA50FI SGS-THOMSON HLlCTIàìO« N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP9N A 50 STP9N A 50FI Voss RoS on lo I 500 V 500 V < 0.8 Ç1 < 0.8 Q. 8.8 A 5 A j j . TYPICAL RDS(on) = 0.7 Q . ± 30V GATE TO SOURCE VOLTAGE RATING