DIODE GE 20A Search Results

m7 smd diodes

Abstract: m7 smd diode m7 diode diode smd m7 smd diode sf smd diode M7 DIODE 20A diode M7 C20T06QH DIODE SMD 10A
Contextual Info: SCHOTTKY BARRIER DIODE C20T06QH C20T06QH-11A 20A/60V FEATURES o |SQUARE-PAK| TO-263AB SMD Packaged in 24mm T ape and Reel : C20T06QH o T abless TO-220 : C20T06QH-11A ODual Diodes - Cathode Common o L o w F orw ard V olta ge D rop o High Surge Capability

RG105

Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

SGF40N60UFD

Contextual Info: SGF40N60UFD CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK; IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

20NB60HD

Abstract: stgw20nb60hd 20NB60H
Contextual Info: STGW20NB60HD  N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT T YPE V CES V CE sat IC STGW 20NB60HD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY

igbt 200v 20a

Abstract: SGH20N60RUFD 20A igbt
Contextual Info: SGH20N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *

20NB60HD

Abstract: STTA2006 STGW20NB60HD
Contextual Info: STGW20NB60HD  N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT T YPE V CES V CE sat IC STGW 20NB60HD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY

G20N50c

Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
Contextual Info: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC

Diode 400V 20A

Contextual Info: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

w20nb60hd

Contextual Info: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT TYPE VcES VcE sat lc S TG W 20NB60H D 600 V < 2.8 V 20 A . . . . . . . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V cesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

siemens igbt BSM 25 gd

Abstract: siemens igbt BSM 10 siemens igbt BSM 100 ECONOPACK 2K IGBT Power Module siemens bsm
Contextual Info: SIEMENS BSM 20 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate LU Type b Package Ordering Code BSM 20 GD 60 DN2 600V 20A ECONOPACK 2 C67076-A2511-A67 BSM 20 GD 60DN2E3224

SGH40N60UFD

Abstract: igbt for induction heating
Contextual Info: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls

CM20AD05-12H

Abstract: cm20ad DIODE EVP 28
Contextual Info: MITSUBISHI IGBT MODULES ARY CM20AD05-12H MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM20AD05-12H ¡IC . 20A

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

FAST RECOVERY DIODE dual 20a 600 to247

Abstract: fgh20n60 smps 10w 12V igbt 400V 20A 400v 20A ultra fast recovery diode FGH20N60UFD FGH20N60UFDTU 12v igbt 20a igbt 600v 20a power Diode 400V 20A
Contextual Info: FGH20N60UFD 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

Contextual Info: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT TYPE V ces VcE sat lc S TG W 20N B60H D 600 V < 2 .8 V 20 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW ON-VOLTAGE DROP (V c e s a t) . LOW GATE CHARGE . HIGH CURRENT CAPABILITY . VERY HIGH FREQUENCY OPERATION

20GT60sw

Contextual Info: Advanced Power Electronics Corp. AP20GT60SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A VCES 600V IC 20A C (tab) G Built-in Fast Recovery Diode C C RoHS-compliant, halogen-free

Contextual Info: Advanced Power Electronics Corp. AP20GT60ASI-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.7V at IC=12A VCES 600V IC 20A Isolated tab G Industry-standard isolated package C C RoHS-compliant, halogen-free

igbt 45 f 122

Abstract: igbt 200v 20a 200v dc motor igbt
Contextual Info: SGH40N60UFD N-CHANNEL IGBT FEATURES TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) # APPLICATIONS 0 C * AC & DC Motor controls * General Purpose Inverters