DIODE GERMANIUM 1N270 Search Results

Contextual Info: 1N277 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 500 mA p e a k If Vr 110 V P diss 80 mW @ Tc = 25 °C Tj -65 °C to +85 °C T stg -65 °C to +85 °C

diode germanium 1n270

Abstract: 1N277 "Germanium Diode" 1N270 diode
Contextual Info: 1N277 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 5OO mA If i peak Vr 11O V Pd is s 8O mW @ Te # 25 0C Tj -65 °C to +85 0C Ts t g -65 0C to +85 0C

diode germanium 1n270

Abstract: 1N270 diode 1N270 "Germanium Diode" Germanium Diode 1n270
Contextual Info: 1N270 asii GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. MAXIMUM RATINGS 200 mA If p e a k Vr 100 V Pd is s 80 mW @ Te # 25 °C Tj -65 0C to +85 0C Ts t g -65 0C to +85 0C

Contextual Info: 1N270 asi GERMANIUM DIODE DESCRIPTION: PACKAGE STYLE DO-7 The 1N270 is Designed for General Purpose Small Signal, and Switching Applications. 0 .1 0 5 [2 . 6 6 7 ] 0 . 0 1 9 -0 .0 2 1 0 . 4 8 3 -0 . 5 3 3 ] 1.000 [2 5 .4 0 ] MAXIMUM RATINGS 200 If mA p e a k

1N270

Abstract: diode germanium 1n270 "Germanium Diode"
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N270 Features • • • Germanium Diode 100 Volt Low Leakage Current Flat Junction Capacitance High Mechanical Strength

SCR TRIGGER PULSE TRANSFORMER

Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
Contextual Info: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is

Amperex hl

Contextual Info: AN31 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET

diodo Zener 4.1v

Abstract: diode 1N270 Germanium Diode 1n270 1N270 QQQQ332 Germanium audio Amplifier diagram diode germanium 1n270
Contextual Info: BSE D • bTTOMS? QQQQ332 S ON CHIP SYSTEMS ~v OJRTO âK JEO fllU SIC . SPiOflUTÖ 110 Highland Ave. Lois Gatos C l. 95030, USA Tél. {408 395-3350 pP Controllable Dynamic Signal Processor The CEM 3391 Is a complete Features: system lor the dynamic signal

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

mc34063

Abstract: BF-442 MC34063 design examples MC34063 current source mc34063 step down external transistor flyback MC34063 MPSU51A LED DRIVER BY MC34063 a78s40 uA78S40
Contextual Info: AN920/D Theory and Applications of the MC34063 and mA78S40 Switching Regulator Control Circuits http://onsemi.com Prepared by: Jade Alberkrack ON Semiconductor APPLICATION NOTE This paper describes in detail the principle of operation of the MC34063 and µA78S40 switching regulator subsystems. Several

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

PA 0016 PIONEER

Abstract: FRWJ stc 8080 Pioneer PA 0016 stc 8080 h signetics 82S123 8080a intel microprocessor Architecture Diagram LHi 807 N7400A 1N270 diode
Contextual Info: fKMISTICf 8080 CfflUUITOR fflflnUAl TflBM o r COOTaiTS Foreword.