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    DIODE GERMANY Search Results

    DIODE GERMANY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ36V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GERMANY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAP51-02

    Abstract: BP317
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


    Original     		M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317 PDF

    109 DIODE

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


    Original     		M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE PDF

    17033

    Abstract: VISHAY sot23 device Marking DC 17417
    Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


    Original     		BAW56 BAL99, BAV99, BAV70. OT-23 30k/box 30k/box D-74025 10-Jul-03 17033 VISHAY sot23 device Marking DC 17417 PDF

    BAV70-GS18

    Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
    Contextual Info: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with


    Original     		BAV70 BAV99, BAW56, BAL99. OT-23 BAV70-GS18 BAV70-GS08 D-74025 09-Jul-04 BAL99 BAV70 BAV70-GS08 BAV99 BAW56 PDF

    Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


    Original     		BAW56 BAL99, BAV99, BAV70. OT-23 BAW56 BAW56-GS18 BAW56-GS08 D-74025 27-Apr-04 PDF

    BAW56 GS18

    Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
    Contextual Info: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


    Original     		BAW56 BAL99, BAV99, BAV70. OT-23 BAW56-GS18 BAW56-GS08 D-74025 09-Jul-04 BAW56 GS18 marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08 PDF

    1N4448

    Abstract: 1N4448W IMBD4448 LL4448
    Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type


    Original     		1N4448W DO-35 1N4448, LL4448, OT-23 IMBD4448. OD-123 D3/10 D-74025 10-Sep-03 1N4448 1N4448W IMBD4448 LL4448 PDF

    Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type


    Original     		1N4448W DO-35 1N4448, LL4448, OT-23 IMBD4448. OD-123 D3/10 D-74025 12-May-03 PDF

    Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical


    Original     		L9278-14 SE-171 KLED1041E01 PDF

    Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type


    Original     		1N4448W DO-35 1N4448, LL4448, OT-23 IMBD4448. OD-123 1N4448W 1N4448W-GS18 1N4448W-GS08 PDF

    L9278-14

    Abstract: SE-171
    Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical


    Original     		L9278-14 SE-171 KLED1041E01 L9278-14 PDF

    1N4448

    Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 1n4448w-v
    Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the


    Original     		1N4448W-V DO-35 1N4448, LL4448, OT-23 IMBD4448 2002/95/EC 2002/96/EC OD-123 1N4448 1N4448W-V-GS18 IMBD4448 LL4448 1n4448w-v PDF

    VISHAY diode MARKING

    Contextual Info: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode


    Original     		BAV70 BAV99, BAW56, BAL99. OT-23 E8/10 D-74025 10-Jul-03 VISHAY diode MARKING PDF

    1N4448

    Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 SOT23 DIODE marking CODE AV ll4448 vishay 1n4448w-v
    Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the


    Original     		1N4448W-V DO-35 1N4448, LL4448, OT-23 IMBD4448 2002/95/EC 2002/96/EC OD-123 1N4448 1N4448W-V-GS18 IMBD4448 LL4448 SOT23 DIODE marking CODE AV ll4448 vishay 1n4448w-v PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

    BAS70-07S

    Abstract: BAS70-08S
    Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


    Original     		BAS70-07S BAS70-08S OT323-6L BAS70-08S PDF

    marking D33

    Abstract: BAS70-07S BAS70-08S
    Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF


    Original     		BAS70-07S BAS70-08S OT323-6L BAS70-08S marking D33 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

    Contextual Info: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type


    Original     		1N4151W DO-35 1N4151, LL4151. OD-123 1N4151W-GS18 1N4151W-GS08 D-74025 23-Apr-04 PDF

    Contextual Info: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type


    Original     		1N4151W DO-35 1N4151, LL4151. OD-123 1N4151W 1N4151W-GS18 1N4151W-GS08 D-74025 12-Feb-04 PDF

    1N4448W-V-GS18

    Abstract: 1N4448W-V-GS08
    Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the


    Original     		1N4448W-V DO-35 1N4448, LL4448, OT-23 IMBD4448. 2002/95/EC 2002/96/EC OD-123 1N4448W-V 1N4448W-V-GS18 1N4448W-V-GS08 PDF

    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with


    Original     		1N4151WS-V DO-35 1N4151, LL4151. 2002/95/EC 2002/96/EC OD-323 1N4151WS-V 1N4151WS-V-GS18 1N4151WS-V-GS08 PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 PDF

    1N4151

    Abstract: 1N4151WS-V 1N4151WS-V-GS08 1N4151WS-V-GS18 DO35 LL4151
    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO35 case with the type designation 1N4151, and the MiniMELF case with


    Original     		1N4151WS-V 1N4151, LL4151. 2002/95/EC 2002/96/EC OD323 GS18/10 GS08/3 1N4151WS-V-GS18 1N4151 1N4151WS-V 1N4151WS-V-GS08 DO35 LL4151 PDF