PK P6KE 200A
Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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EC111
EC2111v1E0804
PK P6KE 200A
SLD30-018
436 6V8A
1.5KA36CA
N10H
kt 201-500
P6KA36CA
P6KA 335
Diode N10Z
P6KA18CA
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GDE 13a DIODE
Abstract: diode marking GDE 38 diode 009 6V8A marking diode 47C sot23 NEC D 882 p GEX 36A DIODE Diode Gfg 6f MOTOROLA 727 36A Diode GFP 56A GFM 16A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ23 Dual Monolithic Common Anode Zener MMBZ5V6ALT1 ADDITIONAL VOLTAGES AVAILABLE Transient Voltage Suppressor For ESD Protection Motorola Preferred Device This dual monolithic silicon zener diode is designed for applications requiring transient
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OT-23
GDE 13a DIODE
diode marking GDE 38
diode 009 6V8A
marking diode 47C sot23
NEC D 882 p
GEX 36A DIODE
Diode Gfg 6f
MOTOROLA 727 36A
Diode GFP 56A
GFM 16A
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GEZ 44 A diode
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from
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E230531
DO-214AB
16mm/7â
RS-481
GEZ 44 A diode
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HRA series SMCJ-HRA Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HRA High Reliability series is designed specifically to protect sensitive electronic equipment from
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-PRF-19500.
DO-214AB
16mm/13â
RS-481
16mm/7â
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duraseal
Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Text: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and
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200oC
duraseal
SiC IGBT High Power Modules
sic wafer 100 mm
Wacker Silicones
28Cu72Ag
wacker
100C
parallel mosfet
Cree SiC MOSFET
silicon carbide
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Untitled
Abstract: No abstract text available
Text: SKiiP 11NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; ([ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +
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11NAB126V1
11NAB126V1
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diode BFT 99
Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
diode BFT 99
Diode GEP 5C
Diode GFT
DIODE BFT marking code
GEZ DIODE
GEZ 304 DIODES
transient voltage suppressor diode
diode marking GDE on semiconductor
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GEZ DIODES
Abstract: diode BFT 99 GFX DIODE GHM PF t54c 214B CD214C CD214C-T170A CD214C-T26A diode smc bfk
Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
bid004)
e/IPA0408
GEZ DIODES
diode BFT 99
GFX DIODE
GHM PF
t54c
214B
CD214C-T170A
CD214C-T26A
diode smc bfk
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Untitled
Abstract: No abstract text available
Text: SKiiP 11AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter K;CR .; .;1Y K/CR & P GF Q;O 4+8*&& 2'-* 79&* &@*,969*5 (& P GF VWTX Q; '@ Z S L& (¥ Diode - Inverter MiniSKiiP 1 3-phase bridge inverter SKiiP 11AC126V1 Features # $%&' ()*+,- ./0(&
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11AC126V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 23NAB126V10 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L;CS .; .;1X L/CS & Q GF R;O 4+8*&& 2'-* 79&* &@*,969*5 (& Q GF VNTW R; (Z Diode - Inverter, Chopper MiniSKiiP 2 (& Q GF VNTW R; .$ .$1X (Z
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23NAB126V10
23NAB126V10
27characteristic
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diode BFT 99
Abstract: BEM 45 bfw 10 transistor GGT DIODE ON marking BHR marking code BFK GHM DIODE GFX DIODE GGR diode GHM PF
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series
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CD214C
DO-214AB
diode BFT 99
BEM 45
bfw 10 transistor
GGT DIODE ON
marking BHR
marking code BFK
GHM DIODE
GFX DIODE
GGR diode
GHM PF
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GFX DIODE
Abstract: Diode GFK t100a GGR diode GGP DIODE diode gfm Diode T75A GGT DIODE ON BDP 284 diode marking GDE on semiconductor
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series
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CD214C
DO-214AB
GFX DIODE
Diode GFK
t100a
GGR diode
GGP DIODE
diode gfm
Diode T75A
GGT DIODE ON
BDP 284
diode marking GDE on semiconductor
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marking diode KE
Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series
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CD214C
DO-214AB
marking diode KE
diode ed 5ca
marking KE diode
diode BFT 99
GEZ DIODES
GFX DIODE
t100a
t100c
214B
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Diode GFK
Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214C
DO-214AB
Diode GFK
DIODE BFT marking code
GFX DIODE
GEZ DIODE
Diode GFK 48
general semiconductor marking code GFX
BFM General Semiconductor
diode smc bfk
GGR diode
GGP 16 DIODE
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diode marking GDE on semiconductor
Abstract: bgv DIODE bdv 83 do SMCJ6.0C bem diode GGM DIODE SMCJ408CA Diode GFK 48 gft 70 diode marking BFK on semiconductor
Text: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 495 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series
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DO-214AB
DO-214AB)
diode marking GDE on semiconductor
bgv DIODE
bdv 83 do
SMCJ6.0C
bem diode
GGM DIODE
SMCJ408CA
Diode GFK 48
gft 70
diode marking BFK on semiconductor
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Diode GFK
Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series
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DO-214AB
RS-481-A
DO-214AB)
Diode GFK
GFX DIODE
diode marking GDE on semiconductor
Gex DIODE
diode marking BFK on semiconductor
Diode BFM
diode smc bfk
Diode Gfg 33
GEZ DIODE
DIODE gde 18
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thyristor BT 161
Abstract: No abstract text available
Text: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability
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Bulletin127092
thyristor BT 161
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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low frequency automatic gain control
Abstract: automatic gain control Frequency Generator 1KHZ gg2v
Text: PIN CONFIGURATION FEATURES • Positive bias only • Low gate voltage • Enhancement mode operation • Wide AGC range - 50dB at 200MHz • Zener diode gate protection • Ion implanted for greater reliability • High power gain without neutralization - 20dB at 200MHz
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200MHz
15mmhos
100kHz,
196MHz.
-15dbm,
200MHz.
low frequency automatic gain control
automatic gain control
Frequency Generator 1KHZ
gg2v
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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SIG03-30
Abstract: P151 SIG03 T760 T810 T930 TVIM 80136
Text: S I G 0 3 2 i a (« *m à i ' ' 7 —y -4* —K ) • « • » ta k : O utline D raw ings GENERAL-USE RECTIFIER DIODE I Features • Diffused-junction • High voltage capability • • Excellent avaranche characteristics Stud mounted ■ ffliiis * A p p lic a tio n s
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SIG03
SIG03-30
50HzjEM
i1Elft-Tei9S24^
I95t/R89)
SIG03-30
P151
T760
T810
T930
TVIM
80136
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Untitled
Abstract: No abstract text available
Text: 6DI15MS-05005A 1 i Outline Drawings POWER TRAN SISTO R MODULE : F e a tu r e s • h FE^ iS^ ' High DC Current Gain V.' High speed switching • 7 U —? M U 's W 'i'X —Kf*93£ • Including Free Wheeling Diode Insulated Type : A p p lic a t io n s •
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6DI15MS-05005A)
l95t/R89
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