DIODE GP 634 Search Results

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

diode gp 429

Abstract: diode gp 421 a6t diode diode gp 634 marking aag AN1001 AN-994 IRFB41N15D gp 001 diode IRFS41N15D
Contextual Info: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

Contextual Info: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

IRF AN1001

Abstract: IRF6218S AN1001 IRF6218L IRF6218S-l
Contextual Info: PD - 95863A IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l VDSS Reset Switch for Active Clamp Reset DC-DC converters RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

AN1001

Abstract: IRF6218L IRF6218S
Contextual Info: PD - 95863 IRF6218S IRF6218L SMPS MOSFET HEXFET Power MOSFET Applications l Reset Switch for Active Clamp Reset DC-DC converters VDSS RDS on max -150V 150m:@VGS = -10V ID -27A Benefits l l l Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

IRFS52N15D

Contextual Info: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

AN1001

Abstract: AN-994 IRFS52N15D IRFSL52N15D
Contextual Info: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

IRF3710S

Abstract: IRF3710L IRF 450 MOSFET AN-994 IRF3710
Contextual Info: PD - 94201A IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description

IRL3713S

Contextual Info: PD - 97011A IRL3713PbF IRL3713SPbF IRL3713LPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free

AN-994

Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
Contextual Info: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω

ak 957 1542 d

Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11

IRFZ46NL

Abstract: IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N
Contextual Info: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω

AN-994

Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

3707S

Abstract: "current regulator" IRF3707PBF 4.5v to 100v input regulator
Contextual Info: PD - 94813 IRF3707PbF IRF3707S IRF3707L SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is

3704s

Abstract: IRF3704L 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94814 IRF3704PbF IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is

IRF3707ZCL

Abstract: IRF3707ZCS
Contextual Info: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

IRF3707ZCL

Abstract: IRF3707ZCS
Contextual Info: PD - 94784B IRF3707ZCS IRF3707ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

95836

Abstract: AN-994 IRF3709ZCL IRF3709ZCS 9583 IRF370 14ab
Contextual Info: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

95836

Abstract: 14AB AN-994 IRF3709ZCL IRF3709ZCS
Contextual Info: PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage

Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.