DIODE H 5 N Search Results

Contextual Info: yiyu 5 /ayh'+ - JKUT S W - h 5 Schottky Barrier Diode Twin Diode • W I2 \ fi£ II] OUTLINE DIMENSIONS D25SC6M 60V 25A •Tjl50°C • P rrsm77 ^ m •S R S S % D C /D C n y j K — 2 •m m , t f - h s • I f > oAggg 7 ti- ^ w * g g RATINGS Tc = 25°C

Contextual Info: Ö U AL IT Y T E C H N O L O G I E S CORP 57E » 74bbñ51 0 0 0 H im 3Tb •■ 3TY Optolsolator Specifications _ H 11A520, H 11A550, H 11A 5100 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H 1 1 A 5 2 0 , H 1 1 A 5 5 0 a n d H 1 1 A 5 1 0 0 co n s is t o f a g a lliu m

Contextual Info: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r

SLD201V

Abstract: sld201 SLD201U TO50 package noise diode
Contextual Info: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.

Contextual Info: 5 /a y h '+ - yiy u JKUT S W -h 5 Schottky Barrier Diode Twin Diode • W I 2 \ f i£ I I ] OUTLINE DIMENSIONS D20SC9M 90V 20A •T jl5 0 ° C • P rrsm 7 7 ^ m •S R S S %DC/DC n y j K — 2 • m m , t f - h s oAggg • I f > 7 ti-^ w *gg RATINGS T c = 25°C

DD400S33KL2C

Contextual Info: Technische Information / technical information DD400S33KL2C IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % % / / % 1 1 % $ 0 ;0 0 5 60 +, ) % 0 0 +: 5 ) 6 0 : &' ) 6 !*

Contextual Info: SKKE 301F THYRISTOR BRIDGE,SCR,BRIDGE HSPT HSST UVSTP W @NC % '40124F4 I0-F. 3 , )*+2*F)FE );.,0+2)*5 H H UV%H W ACC % 'E2*= BXCY NC DLY Z( W @A [$5 BOCC BOCC Symbol Conditions UV%H UVPT 2^+ SEMIPACK 2 Fast Diode Modules SKKE 301F P¥¥? ACBVBO Values Units

LT-020

Contextual Info: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D1NJ10 U nit • mm Package I AX057 100V 1A 1-0 2 ^ - 1> n r) ^ 2 . 6 ±u • T jl5 0 ° C •;• • 5 mm fcf " j 3±o -M - • I S Ir = 0 .1 m A =i—hNo.4060 MIN27mm m ffitt

0116 solar

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

FCQS10A065

Abstract: marking 3H diode
Contextual Info: 10A 6 5 V T jw 1 5 0 V Fully Molded similar ta TO-220AB FCQS10A065 ttHtft Nihon Inter Electronics Corporation Specification. i/ Construction h -y h ^r — y Schottky Barrier Diode K ffliÉ Application High Frequency Rectification MAXIMUM RATINGS T a= 2 5 °C Unless otherwise specified

DD200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

DD200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

MBD702

Abstract: MBD502
Contextual Info: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.

BA diode

Abstract: BA147-150 BA147 diode ba 147 diode case R-1 diode case R-1 G BA 30 C BA147-300 BA 147 41880
Contextual Info: BA 1 4 7 / . . Silizium-Diode Silicon diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm KATHODE CATHODE IL » 2 ,6 'j ^ 1 1 0 0 ,5 5 ' H l - 1 —-2 6 - ► - -7 .2 -— - - 2 6 - 5 117

FCHS10A045

Abstract: 10a45
Contextual Info: ¿ y — F - '- r y 1 0 A 4 5 V T j* 1 5 0 V S B D Fully Molded similar to TO-22QAB Cathode common FCHS10A045 ttttft Nihon Inter Electronics Corporation Specification ' > 3 -y h y T 5? 4 Construction Schottky B arrier Diode Application H igh Frequency Rectification

Contextual Info: N AMER PHILIPS/DISCRETE b'lE T> bbS3T31 D0271D? 5^6 H A P X Preliminary specification Philips Semiconductors 1PS226 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. MAX.

SHINDENGEN DIODE

Contextual Info: Surface Mounting Device '> 3 7 h y ^ — K tm x r ^ \ y -o m \ WÆ Schottky Barrier Diode v H iH DF20SC3L Twin Diode OUTLINE DIMENSIONS 30V 20A •S M D • T j 15CTC • e V F = 0 .4 5 V • P rrsm 7 7A 5 > ^ x ß ü E •S R æ s • D c / D c n y n —s>

D74 DIODE

Abstract: MEB00806 diode 009 7272 three phase ups diode bridge AC TO DC DIODE BRIDGE UPS-15
Contextual Info: MEB00806 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Module 60 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N F E MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Volts

Contextual Info: “û7 MARKTEC H INT ER NA TION AL Mf| 5 7 ^ 5 5 DARLINGTON COUPLER S7996S5 M A R K T E C H INTERNATI O N AL u 87D 00132 QDGDÎ35 fl D 4N29, 4N29A, 4N32, 4N32A GaAs INFRABED EMITTING DIODE & NPN SILICON PHOTO DARLINGTON APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR

Contextual Info: '>3 7 h V7 $ < 1 — K Schottky Barrier Diode ' K > Twin Diode OUTLINE DIMENSIONS SF10SC6 60V 10A n s • T j 150t • P r r s m 7 ’A 5 > i/i1 S E E • t g ^ J L Æ - h* •*«S B Œ 2KV «E •S R 8 S •DC/DC □ > ; -$ > •m m . i f - h . OAjSü

1N958 zener diode

Abstract: zener diode 1N961 1N965 zener diode 1N1313 IN946 1N938 1N939 1N957 1N958 diode zener 1N985
Contextual Info: O l O ' 01 z z z H H H 5 5 5 5 S S CO 9 O r-i CM CO W V CO CO ^ ^ ^ ^ oí oí oi O ' O ' O ' z z z z z z H H h ri h Diode i 0.20 0.80 0.68 0.65 o o o OOO o o o in in in 500.0 500.0 500.0 125.0 150.0 185.0 230.0 270.0 330.0 400.0 500.0 750.0 900.0 1100.0

Contextual Info: . _ _ _ . Lf y t B H ie x V t - f 7. Surface Mounting Device *# a ! Single Diode i . h* - U tipe Super Fast Recovery Diode OUTLINE DIMENSIONS D2FL20U 200V 1.5A #/J SMD • trr3 5 n s ffl % •SRS® •DC/DC •il«- OA. STO FA • Æ tè ü RATINGS Absolute Maximum Ratings

Q02H

Abstract: SLD202U SLD202V laser printer high voltage diagram
Contextual Info: SLD202U/V SONY. 25mW High Power Laser Diode Description Package Outline S LD 20 2 U /V is a gain-gu id e d h ig h -p o w e r SLD202U U n it: mm •;« . laser diode fabricated by MOCVD. Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure