DIODE H4 Search Results

DIODE A46

Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Contextual Info: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s

SE301A

Abstract: 30mWI
Contextual Info: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header

Contextual Info: N E C ELECTRONICS INC 30E D • h42752S 005=^44 Ô ■ LIGHT EMITTING T-M/-U DIODE SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

a4 u SOT-23

Contextual Info: MOTOROLA Order this document by BAV70LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode ANODE - H CATHODE — H4- 1 -O 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current If

smd diode code 96

Abstract: diode marking code 96 BB131 CD smd diode
Contextual Info: Short-form preliminary specification Philips Sem iconductors VHF variable capacitance diode FEATURES • BB131 QUICK REFERENCE DATA Ultra small plastic SMD package. SYMBOL APPLICATIONS • As coupling diode in VHF tuners. !r cd DESCRIPTION Silicon variable capacitance diode in

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Contextual Info: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.

laser diode for free space communication

Abstract: GD16521-48BA GD16521-D STM-16 DIODE h4 1027ib 50W 50 ohm termination
Contextual Info: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

DD400S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 8 29 & 1 6*" & -. * & ; -: 6 * "

DD400S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 8 29 & 1 6*" & -. * & ; -: 6 * "

DD400S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD400S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 8 29 & 1 6*" & -. * & ; -: 6 * "

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

Y1600

Abstract: FS800R06A2E3
Contextual Info: Technische Information / technical information FS800R06A2E3 IGBT-Module IGBT-modules HybridPACK2 Modul mit Trench/Feldstop IGBT³ und Emitter Controlled Diode HybridPACK2 module with trench/fieldstop IGBT³ and Emitter Controlled diode IGBT-Wechselrichter / IGBT-inverter

DIODE FAST S2L

Abstract: S2L-07
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm S2L60 OUTLINE Unit • mm Weight 0.65g Typ Package : AX10 600V 1.5A Feature 26.5 • H lf f iF R D • High Voltage Super FRD • í & • Low Noise • y ' í X trr=50ns 26.5 CJ> 0 4.4 H4- • trr=50ns * f f if lJ B M M

BC237

Abstract: sot23 transistor marking JY
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel

fdfs6n303

Abstract: 6n303 L86Z SOIC-16 F011 F63TNR F852
Contextual Info: October 2001 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package.