DIODE HB Search Results
DIODE HB Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE HB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
avago
Abstract: HSMP-3816 3866 20 GHz PIN diode schottky diode hsms8202 HSMP-3866 8202 HSMS-285C transistor 3866 HMPP-3892
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ATDK-DK01) HBAT-540C HMPP-3892 HMPS-2825 HSMP-3816 HSMP-381F HSMP-381Z HSMP-3820 HSMP-3866 HSMP-386Z avago HSMP-3816 3866 20 GHz PIN diode schottky diode hsms8202 HSMP-3866 8202 HSMS-285C transistor 3866 HMPP-3892 | |
vqe 14 E
Abstract: vqe 13 e vqe 13
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OCR Scan |
BSM300GA120DN2 Nov-24-1997 vqe 14 E vqe 13 e vqe 13 | |
OF IGBT BSM 200 GAL 120 DN2 1200V 290A
Abstract: HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper
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BSM300GA120DN2 200GAL C67070-A2301-A70 Nov-24-1997 Sep-21-98 OF IGBT BSM 200 GAL 120 DN2 1200V 290A HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper | |
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Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70 |
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BSM300GA120DN2 | |
diode chopper
Abstract: BSM300GA120DN2 C67070-A2301-A70
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BSM300GA120DN2 200GAL C67070-A2301-A70 diode chopper BSM300GA120DN2 C67070-A2301-A70 | |
200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
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BSM300GA120DN2 200GAR C67070-A2301-A70 200GAR BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70 | |
200-GAR
Abstract: 200GAR chopper,diode BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70 AC - DC chopper
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BSM300GA120DN2 200GAR C67070-A2301-A70 200-GAR 200GAR chopper,diode BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70 AC - DC chopper | |
200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
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BSM300GA120DN2 200GAR C67070-A2301-A70 200GAR BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70 | |
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Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70 |
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BSM300GA120DN2 | |
BSM200GAL120DN2
Abstract: BSM300GA120DN2 C67070-A2301-A70 diode chopper
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BSM300GA120DN2 200GAL C67070-A2301-A70 BSM200GAL120DN2 BSM300GA120DN2 C67070-A2301-A70 diode chopper | |
BSM200GAL120DN2
Abstract: BSM300GA120DN2 C67070-A2301-A70
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BSM300GA120DN2 200GAL C67070-A2301-A70 BSM200GAL120DN2 BSM300GA120DN2 C67070-A2301-A70 | |
zener diode
Abstract: WT-Z108N
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WT-Z108N 137um) zener diode WT-Z108N | |
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Contextual Info: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode |
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WT-Z108P | |
ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
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WT-Z111N 160um) ZENER Vr 3V Zener Diode 3v zener- diode WT-Z111N | |
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3.2 v zener diodeContextual Info: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode |
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WT-Z108P-AU 3.2 v zener diode | |
um 54 diode
Abstract: zener diode chip 3.2 v zener diode
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WT-Z108N-AU 137um) um 54 diode zener diode chip 3.2 v zener diode | |
semikron skiip 232
Abstract: IN4 diode semikron skiip 33
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IGBT11) Rthjs10) semikron skiip 232 IN4 diode semikron skiip 33 | |
SK 26 diode
Abstract: IGBT 200A 1200V semikron
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IGBT11) Rthjs10) SK 26 diode IGBT 200A 1200V semikron | |
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Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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IGBT11) Rthjs10) | |
semikron skiip 342 GDL
Abstract: semikron skiip 342 dc to dc chopper using igbt SEMIKRON SKiiP 342 GD semikron skiip 33 skiip 33 ups
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IGBT11) Rthjs10) semikron skiip 342 GDL semikron skiip 342 dc to dc chopper using igbt SEMIKRON SKiiP 342 GD semikron skiip 33 skiip 33 ups | |
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Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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IGBT11) Rthjs10) | |
semikron skiip 132 GDL
Abstract: semikron skiip 33 skiip 33 ups
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IGBT11) Rthjs10) semikron skiip 132 GDL semikron skiip 33 skiip 33 ups | |
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Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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IGBT11) Rthjs10) | |
WT-Z108PContextual Info: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode |
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WT-Z108P-4 WT-Z108P | |