DIODE IB5 Search Results

diode sg 5 ts

Contextual Info: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ V drm Type V rrm V rrm Thyr (Diode) V V / i 2d t Itrmsm Itsm A lïAVM/tc

MIB57TA-J

Abstract: MIB57TA-K
Contextual Info: MIB57TA-J MIB57TA-K CRO DESCRIPTION INFRARED EMITTING DIODE 04.98 ' 0.196 MIB57TA-J and MIB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 ,r (0 .04) //* // ft ^ - 1 w \\ \>k #1.8 ? \\ 0.75(0.03)_

BAY96

Abstract: Diode BAY 96 Diode BAY96 varactor diode Frequency tripler Frequency Tripler varactor VARACTOR BAY96 varactor tripler "Frequency Tripler" IB5646I
Contextual Info: SILICON PLANAR EPITAXIAL VARACTOR DIODE BAY96 T O TA L DISSIPATION P L O T T E D AGAINST MOUNTING BASE T E M PE R A T U R E 1000 VD V 100 T Y PIC A L DIODE CA PA C ITA N C E AND SER IES RESISTA N CE P L O T T E D AGAINST R E V E R SE VO LTA G E I ' ¡n irrr-l

MIB57TA-J

Abstract: MIB57TA-K
Contextual Info: MIB57TA-J MIB57TA-K IN F R A R E D E M IT T IN G D IO D E 04.98 ' 0.196 D E SC R IP T IO N M IB57TA-J and M IB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent 8.7 (0 .34 ) 1.0 •[(0.04) T1.8 (0,23) lens. 0.75(0.03) max.

1B5-25S

Abstract: Scans-0017342
Contextual Info: i B5/25 s IH 6 G TUNG-SOL DUO-DIODE TRIO DE A M P LIFIE R COATEO 2.0 F ILAMENT VOLTS 0.06 AMPERE DC GLASS MOUNT I N G THESE BASE 8E 2 IB5/25S TUBES SHOULD DOWN. AND 5 THE ARE F OR TUBE VERTICALLY HORIZONTAL TU8E HORIZONTAL. 1H6G P O S I T I ON OPERATED HO WE V E R ,

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbSDS GG12111 ÔT5 « H I T 4 HL1324MF InGaAsP LD Description The HL1324MF is an InGaAsP long wavelength laser diode suited for short and medium range optical communications (optical data links, optical LANs, subscriber systems).

BAY96

Abstract: Diode BAY 96 Diode BAY96 varactor diode application varactor diode c420 diode "Frequency Tripler" VARACTOR BAY96 Frequency Tripler varactor varactor tripler
Contextual Info: SILICON PLANAR EPITAXIAL VARACTOR DIODE BAY96 T E N TA T IV E D A T A S ilico n p la n a r e p ita x ia l v a r a c to r diode f o r u s e a s a h ig h e ffic ie n c y fre q u e n c y m u ltip lie r in th e v . h . f . a n d u . h . f . b a n d s . A s a t r i p l e r f r o m 1 5 0 to 4 5 0 M c /s

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

TRANSISTOR 1f

Abstract: 1F transistor 1F t transistor 1fTRANSISTOR
Contextual Info: TD62M3701F TENTATIVE oLOW SATURATION VOLTAGE DRIVER FOR MOTOR Unit in mm 8.2 ± 0.2 TD62M3701F is Multi Chip IC incorporates R R R H H B R H 6 low saturation discrete transistors which equipped bias resistor and free-wheeling diode. This IC is suitable for a battery use motor

Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package OUTLINE DIMENSIONS S1NBB80 800V 1A 43 f i • / M Ü D IP /W ir - S ; •S?F^PH3.4mrn^SSffi RATINGS # îf ë $ ÎÎt ^ 5 È Î& Absolute Maximum Ratings fêÂw&v'ilrê-T /= 2 5 'C 1

OD-880FJ

Abstract: opto 101
Contextual Info: OPTO DIODE CORP SSE D • b f l O l T i ö ODDDlbfl TE'ì H O P D HI-REL GaAIAs IR EMITTERS — OD-880FJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available

DIODE JSu

Abstract: D1UBA80
Contextual Info: Bridge Diode Surface Mounting Device OUTLINE DIMENSIONS D1UBA80 800V 1A « f i L t C D S r ö E O L Y C I S , } £ E P tt« £ C !B 1 8 < f c 'Î U RATINGS #îfë$ÎÎt^5ÈÎ& Absolute Maximum Ratings (fêÊw&v'ilrê- Tc=25‘C) m IB-5- 1 Symbol Item Tstg

1B5-25S

Abstract: 1H6-G 1H6G Scans-0017335
Contextual Info: ih 6g I B 5 / 2 5 S TUNG-SOL DUO-DIODE TRIODE A M P L I F I E R COATED 2.0 F ILAMENT VOLTS 0.06 AMPERE DC GLASS MOUNT ING THESE TUBES BASE BE DOWN. FOR 5 ARE THE BE FOR TUBE VERTICALLY HORI ZONTAL TUBE HORI ZONTAL. 1 M6 G P O S I T I ON OP E R A T E D HOWE V E R ,

DIODE N7

Abstract: N7 diode
Contextual Info: -j'j vvv'ds-v 7:n.7,ii>'fy:ÿ'fy§ë. Bridge Diode Dual In-Line Package OUTLINE DIMENSIONS Package : 1Z S1ZBD 800V 0.5A •/J\lÜDIPA"'.y'7— y • B Ä t t ic f f in s f lis t t • g ilg tg fc t tö Unit : mm RATINGS # îf ë $ ÎÎt ^ 5 È Î& m Absolute Maximum Ratings fêÂ<£>&v>ilrê- T I =2'ò°C

TT 46 N 800

Abstract: 1a43
Contextual Info: -J 'J v W 'C ï S - v Bridge Diode Surface Mounting Device • fl-Ä N -ä s H O U T L IN E D IM E N S IO N S Package : 1W 7.6 S 1 W B A D /D B 800V 1A 43 f i • /J \iU S M D A ° y { 7 - - y • H I fsm 2.0 ¡N Ep E& 0.8MIN V \r 2.5 UMAX .2 ,5 . (« fiL tC D S r ö E O U C tt, l£ E P tt« £ C !B B <

2SJ49 2sk134

Abstract: 2SJ49 2SJ50 2SK134 2SK135 2SJ48 2SJ48 HITACHI 2SK133 2sk133 2Sj48 diode 2U 14
Contextual Info: b l E I 44<ib5DS G D I S Ö I S DAT IHIT4 2SJ48,2SJ49,2SJ50^=5^ SILICON P-CHANNEL MOS FET H I T A C H I / OPTOELECTRONICS ) LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133. 2SK134, 2SK135 • FEATURES • High Power Gain. • Excellent Frequency Response.

RD202

Contextual Info: International ! - R Rectifier HEXFET Power MOSFET • • • • • INR MÛ554S2 QGlSlbQ PD-9.651A IRFI740G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

1168B

Abstract: AAT1168B boost converter PWM closed loop in matlab Mitsumi RF mitsumi ccm AAT1168 AAT1168A QFN-32 VQFN325 marking 8L
Contextual Info: Advanced Analog Technology, Inc. May 2008 AAT1168/1168A/1168B Product information presented is current as of publication date. Details are subject to change without notice. TRIPLE-CHANNEL TFT LCD POWER SOLUTION WITH OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION

AAT1164

Abstract: AAT1164C AAT1164B VI518 boost converter PWM closed loop in matlab AAT1164B-Q5-T AAT1164C-Q5-T AAT1164-Q5-T QFN-32 marking sSH sot-23
Contextual Info: Advanced Analog Technology, Inc. April 2007 AAT1164/AAT1164B/AAT1164C Product information presented is current as of publication date. Details are subject to change without notice. TRIPLE-CHANNEL TFT LCD POWER SOLUTION WITH OPERATIONAL AMPLIFIERS FEATURES

DS11

Abstract: g10q
Contextual Info: ^¡IB5 DT451 A N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /L IT E M ÏI7 I PO W E R S E M IC O N D U C TO R I Features High Cell Density DMOS Technology Low O n-State R esistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance

VP0300M

Abstract: BSR78 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

BSR78

Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B