DIODE ICTE 36 Search Results

Contextual Info: Part: ICTE-5 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 300.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-15C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

zener diode 12c

Contextual Info: Part: ICTE-12C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

Contextual Info: Part: ICTE-8C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00

18c zener diode

Abstract: ZENER 18C 2480 zener
Contextual Info: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-8 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 25.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

Contextual Info: Part: ICTE-10 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

10c zener

Contextual Info: Part: ICTE-10C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

ICTE-22

Contextual Info: Part: ICTE-22 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

diode icte 36

Abstract: ICTE12 ICTE22 ICTE36C c258 thomson transil diode de puissance
Contextual Info: S-THOMSON S IC 59C O T H O M S O N - C S F j C T 02690 E g g . DIVISION SEMICONDUCTEURS. ^ q D 1^ 2^ 537 D — T . QüüatiTG - I l - 2 - 3 | C T E 4 5 ' C ' U N I - A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION U N I - E T BIDIRECTIONNELLES

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - ICTE Low Clamping Specifications - Electrical Characteristics j 10/1000jjs | 10/1000jjs i Maximum I Maximum | Maximum 10/1000jjs Rated j Minimum j Stand By ! Clamping j Clamping jRated Peak

diode 9146

Abstract: diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE
Contextual Info: Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and

TVS Transient Voltage Suppressors

Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Contextual Info: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

diode lt 436

Abstract: ZENER DIODE bzy91
Contextual Info: Table of Contents Introduction to Circuit Protection 1 Varistor Products 2 Surface Mount Varistors 3 PulseGuard Suppressors 4 TVS Diode Arrays 5 Silicon Avalanche Diodes 6 Zeners/Studs 7 Gas Discharge Tubes 8 Resettable PTCs 9 Surface Mount Fuses 10 Axial Lead and Cartridge Fuses

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: Selecting the Optimum Transient Voltage Suppressor Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.

AP6KE

Abstract: ICTE-10 ICTE-15 P4KE16A P6KE16A
Contextual Info: SELECTING THE OPTIMUM TRANSIENT VOLTAGE SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.

suppressor 5v

Abstract: zener Transient Voltage Suppressor Transient Voltage Suppressor diode application note ICTE-10 ICTE-15 P4KE16A P6KE16A AP6KE
Contextual Info: SELECTING THE OPTIMUM VOLTAGE TRANSIENT SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.

sm58a

Abstract: DIODE ZENER BZW 06 903 diode BZW 04 DIODE ZENER 8ZW06 sot 903 DO-214 ea D0-214AB diode zener SMB case d0214ac REFLOW
Contextual Info: TVS AND ZENER PACKAGING CODES Standard Package Code Anti-static Package Codes 1 51 Bulk 2 52 DO-214/215AA SMB , 12mm Tape, T Diameter Plastic Reel Packaging Description DO-218AA (SM5-8A), 24mm Tape, 13" Dia. Paper Reel, Anode Towards Sprocket Hole 2D 2E DO-218AA (SM5-8A), 24mm Tape, 13” Dia. Paper Reel, Cathode Towards Sprocket Hole

32n20

Abstract: 32N20E
Contextual Info: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTW32N20E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate

TP10N10E

Abstract: transistor Ip
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high