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    DIODE IR10 Search Results

    DIODE IR10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IR10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR1011

    Abstract: No abstract text available
    Text: [IR1011] IR1011 Photovoltaic Infrared Sensor GENERAL DESCRIPTION IR1011 is the world smallest mid-infrared quantum photo diode, made of InSb. This surface mount type sensor can be operated at room temperature, and applicable to human body detection, non-contacting temperature measurement, and NDIR gas sensor.


    Original     		PDF IR1011] IR1011 IR1011 MS1472-E-00

    D45H11 equivalent replacement

    Abstract: 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100 MJ10009
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10009*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS


    Original     		PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 2SD218 equivalent MJE6044 equivalent BD420 equivalent 2SB557 equivalent BU326 BU100

    BU108

    Abstract: BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS


    Original     		PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 BDX33D equivalent BD130 TO126 TIP-551 2SA627 BU100 2SB554 cross reference 2SC2536 2N3025 Transistor 3202 1 A 60

    MJ3001 equivalent

    Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10005*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS


    Original     		PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent bd139 equivalent transistor BU108 BDT65C equivalent 2sd313 equivalent darlington tip31

    2sC144

    Abstract: lc 3101 ST BDW83C BUX98A BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18604D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network for


    Original     		PDF MJE18604D2 MJE18604D2 Spr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sC144 lc 3101 ST BDW83C BUX98A BU326 BU108 BU100

    motorola 415 D2PAK

    Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c

    2SC1943

    Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF MJE18004D2 MJE18004D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE motorola transistor cross reference TRANSISTOR 2sb546 transistor 2SA1046 BU108 TRANSISTOR REPLACEMENT GUIDE c 3198 transistor TIP142 TRANSISTOR REPLACEMENT transistor Electronic ballast mje13007

    pin configuration transistor bd140

    Abstract: TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network


    Original     		PDF BUL45D2 BUL45D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C pin configuration transistor bd140 TRANSISTOR REPLACEMENT GUIDE BU108 Drive IC 2SC3346 Replacement MOTOROLA BDX54 2sA671 transistor BU326 BU100 transistor NSD134

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P

    BUT34 equivalent

    Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100

    CASE 221A Style 1

    Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent

    BU108

    Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design


    Original     		PDF MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100

    transistor bc 647

    Abstract: 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUD44D2 is state–of–art High Speed High gain BIPolar transistor H2BIP .


    Original     		PDF BUD44D2 BUD44D2 Fully32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B transistor bc 647 380 darlington to3 ibm motorola 415 D2PAK 726 MOTOROLA TRANSISTORS 3427 motorola transistor 2N6547 DIODE 2N4002 2N5886 Structure BU326 BU108

    BPT-BP2334

    Abstract: BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2
    Text: Infrared Emitting Diode End Look 2 Chip Part Number Material Wavelength p BIR-BM1331 GaAlAs/GaAs BIR-BM1331-A Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 940 1.25 1.50 1.4 2.3 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO1331 GaAlAs/GaAlAs


    Original     		PDF BIR-BM1331 BIR-BM1331-A BIR-BO1331 BIR-BO0331 BIR-BN0331 BIR-BM1731 BIR-BM1731-A IR-17 BPT-BP2334 BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N4148W Features • • • • High Speed Switching Diode 400mW Fast switching speed Surface Mount Package Ideally Suited for Automatic Insertion


    Original     		PDF 1N4148W 400mW OD123 MIL-STD-202,

    V1470

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV1470 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • • • • High Capacitance Ratio : Civ/C5v=5.0 Min. Excellent C-V Characteristics. Variations of Capacitance Values is Little.


    OCR Scan     		PDF V1470 V1470

    c5v diode

    Abstract: KDV251M KDV251S 127 S0T23 cov marking S0T23
    Text: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6£2 Max. • High Capacitance Ratio : 1.7(Min.) —2.2(Max.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF KDV251M/S KDV251M O-92M S0T-23 10juA 50MHz c5v diode KDV251M KDV251S 127 S0T23 cov marking S0T23

    ir10 diode

    Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
    Text: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


    OCR Scan     		PDF 1M-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A or1M5143 1X5144 1M5145 1M5146 ir10 diode LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718

    S0T23

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV1430 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. FEATURES • High Capacitance Ratio : C2v/C 9v=3.7 —5.0 • Low rs • rs=0.5ß Max. . • Small Package. DIM A B C D E G H


    OCR Scan     		PDF V1430 CAPACIT09 70MHz S0T23

    LM5142

    Abstract: 1MJ6 lm993 lm1408 LM1404 lm547 1M57 LM54 LM546 1N5139
    Text: lM-9/93 Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES g æ i s d electronics. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on


    OCR Scan     		PDF lM-9/93 1M1401 1M1412 1M6520 1M6525 1M5461A-1M5476A 1M5692A 1HS707A 1M5474A 1M5454A LM5142 1MJ6 lm993 lm1408 LM1404 lm547 1M57 LM54 LM546 1N5139

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    KDV173

    Abstract: V17-3
    Text: SEMICONDUCTOR KDV173 TECHNICAL DATA SILICON EPITAXIAL PIN DIODE V HF—UHF BAND RF ATTENUATOR APPLICATION. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : Ct =0.25[p F] TYP. . • Low Series Resistance : rs=7[Q] (TYP.). • Designed for Low Inter Modulation.


    OCR Scan     		PDF OT-23 ELECT20 10juA 100MHz KDV173 100/x KDV173 V17-3

    LNJ312G83RA

    Abstract: No abstract text available
    Text: Approved DEVELOPMENT SPECIFICATION P/N:LNJ312G83RA Green Light Emitting Diode A P P L I C A T I ON Indicators M A T E R I A L InGaAlP O Attached U T L I N E A B S O L U T E M A X I M U M R A T I N G S C O N D I T I O N P 55 mW *1 I,. 60 mA V„ Irix* 20 mA


    OCR Scan     		PDF LNJ312G83RA KAG05HIMA KB-H-022-016B KB-H-Q22HD18: