DIODE JSU Search Results

UM9442

Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

FP103

Contextual Info: Ordering number: EN 3962 No.3962 If _ FP103 PN P E pitaxial P lan ar Silicon T ransistor/ Composite Schottky B arrier Diode S A \Y O , DC/DC Converter Applications F e a tu re s - Composite type with a PNP transistor and a Schottky b a rrier diode contained in one packge,

Contextual Info: ATTM. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER -JSutran Devices. Inc PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available Also available on:

CM05B

Abstract: D65084 1N78 1N5764 1N5764MR C65101
Contextual Info: MIL-s-19500&l EL 19November 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,GALLIUM ARSENIDE, MIXER TYPE1N5764, and 1N5764MR 1N5764M , . 1. ScOPE 1.1Scope.Thisspecification covers thedetailrequirements forGal!iumArsenide, Luw Barrier, HighSee:itivity,

CMP-01

Abstract: cmp01c CMP01CP CMP01CJ
Contextual Info: ANALOG DEVICES INC S 1E ANALOG DEVICES ]> üôlbâGO GOBfci'm 3SE -7 3 -5 3 . IANA Fast Precision Comparator FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The CMP-01 is a monolithic fast precision voltage compara­ tor using an advanced NPN-Schottky Barrier Diode process.

Si9901BJ

Abstract: Si9901 SI9911 S1-99 S19901 SI99-01 si9914 Si9911/SI9914 M/PD-500
Contextual Info: S ilic o n ix SÌ9901 A M em ber o f th e T e m ic G ro u p Adaptive Low-Side Power MOSFET Driver Features • 500-V Interface to High-Side Driver • Internal Oscillator for High-Side Charge Pump • Internal 500-V Bootstrap Diode • dv/dt and di/dt Control

SKKL91

Contextual Info: SEMIKRON 15E o INC T -Z S -Z .3 , Thyr stor V rsm Diode V V drm V rrm V V rsm V rrm V 1500 1400 2000 1700 1600 2500 R.M.S. motor ci irrent per phase) Symbol Conditions It r m s ; Ifrms It s m ; Ifsm max. Tvj Tvj ft Tvj Tv) (di/dt)cr (dv/dt)cr Tvj tq Tvj

CMP-01

Contextual Info: CM P-Ol Ipmì FAST PRECISION COMPARATOR P r e c i s i o n M o n o l i t h i c * Inc. FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • • The CMP-01 Is a monolithic fast precision voltage compara­ tor using an advanced NPN-Schottky Barrier Diode process.

DIODE JSu

Abstract: D1UBA80
Contextual Info: Bridge Diode Surface Mounting Device OUTLINE DIMENSIONS D1UBA80 800V 1A « f i L t C D S r ö E O L Y C I S , } £ E P tt« £ C !B 1 8 < f c 'Î U RATINGS #îfë$ÎÎt^5ÈÎ& Absolute Maximum Ratings (fêÊw&v'ilrê- Tc=25‘C) m IB-5- 1 Symbol Item Tstg

Contextual Info: Y B 3 1 1 S 6 I4 A k FAST RECOVERY DIODE : Features • St W i t 9 *&#*<* t i t - . y Ji' = e - t o Y M ? Insulate d p a ckage by fu lly m o ld in g . H ig h vo lta g e by m esa d e s ig n . • SftiRte C onnection D iagram H igh re lia b ility • f f l i i i : A p p lica tio n s

Contextual Info: ^ • HOMffiROr 7BT4bEl ODOl1214l1 0*13 ■ CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 S ÍX -IG B T IG B T M O D H-Series Module 75 Amperes/600 Volts X, Q .Xi Q .Xi N Z -M 4 T H D (7 TYP.) I H. M .

MOSFET 4407

Abstract: ir2110 class d amp IRFP450 inverter irfp460 ir2110 Class d IR2110 inverter ic 3524 application ir2110 with calculations for inverter BJT with V-I characteristics INT-983 Inverter IR2110
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

IRF9460

Abstract: ir2110 spice IR2110 IGBT DRIVER irfp460 ir2110 INT-983 IRGP50S ir2110 with calculations for 3 phase inverter IR2121 irfp450 mosfet IRCPC50F
Contextual Info: Application Note AN-990 Application Characterization of IGBTs Table of Contents Page I. Gate Drive Requirements . 1 I. A Impact of the impedance of the gate drive circuit on switching losses. 1

LM317 spice

Abstract: LM317 spice model Parallel Application LM317 LM317BT LM317MOT MC33269 spice luxeon lumiled IC1 LM317 simulation model electrolytic capacitor JSU23X106AQC
Contextual Info: AND8146/D High Current LED − Capacitive Drop Drive Application Note Prepared by: Carl Walding ON Semiconductor http://onsemi.com APPLICATION NOTE Incandescent lamps, including the tungsten−halogen type, have efficiencies of only about 4 to 10% for visible light.

MOSFET 4407

Abstract: IRF9460 ir2110 class d amp irfp460 ir2110 AN-941 IRFP450 inverter irfp450 mosfet full bridge ir2110 with calculations for inverter full bridge ir2110 4407 mosfet
Contextual Info: INT990 Application Characterization of IGBTs HEXFRED is a trademark of International Rectifier Topics Covered: Gate drive for IGBTs Safe Operating Area Conduction losses Statistical models Switching losses Device selection and optimization Spreadsheets to calculate power losses and junction temperature

SMD diode c5c

Contextual Info: |p | 0 pp 11 q ^ I Provisional Datd ShGGt No. PD-9.1545 IQR Rectifier HEXFET POWER MOSFET IRFN044 N -C H A N N E L 60 Volt, 0 .0 4 0 0 HEXFET H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis­ tors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

LM317BT

Abstract: JSU23X106AQC WIRE JUMPER RSF200JB-2R2 jumper diode substitution luxeon star ZD4 Panasonic 1N4004 1N5917B
Contextual Info: Bill of Materials for LM317HWEVB Demonstration Board h 3/4/2004 Designator Quantity Conn1 C1 C2 C3 C4 D1 D2 D3 D4 F1 IC1 IC1 JMP1 R1 R2 R3 TP1, TP2 TP3 TP4 LED1 LED2 LED3 ZD1 ZD3, ZD4 ZD5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 1 1 1 1 1 1 2 1 Description Value

Contextual Info: 8-CHANNEL SOURCE D RIVERS U D N 2580A and U D N 2585A This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series

2580A

Abstract: DN-2588
Contextual Info: SPRAGUE/SEM ICOND GROUP TS D • flS13fl5G DOOSbBfi 2 T -5 2 -1 3 -0 7 8514019 SPRAGUE. SEM IC O N D S/ I C S 92D 02638 D SERIES UDN-2580A 8-CHANNEL HIGH-CURRENT SOURCE DRIVERS SERIES UDN-2580A 8-CHANNEL SOURCE DRIVERS FEATURES • TTL, CMOS, PMOS, NMOS Compatible

short circuit protection schematic diagram ca723

Abstract: CA723CE schematic diagram 12V to 3V dc voltage regulator transistor jsu TRANSISTOR 2SC CA723 CA723CE equivalent
Contextual Info: i n t e r a g CA723, CA723C i A p r il 1999 D ata S h e e t Voltage Regulators Adjustable from 2 V to 37V at Output Currents Up to 150mA without External Pass Transistors F ile N u m b e r 7 8 8 .4 Features • Up to 150m A Output Current • Positive and Negative Voltage Regulation

UDN2580

Abstract: UDN2580A B1458 UDN2585LW UDN2588A-1 UDN2580LW UDN2585A UDN2588A LN 358 n UDN-2588A-1
Contextual Info: t i q *•* + -t.< * hJ <£> G> Pi > 8-CHANNEL SOURCE DRIVERS This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series

lm547

Abstract: MSI Electronics diodes ir10 DHA6522B DIODE JSu 1M1401 1M1404 1M1412 1M5139 LT3973-3.3
Contextual Info: Il S I ELECTRONICS INC HÛE D IR O S O electronics n. • 5bSb4bb 0000411 054 « M S I 1M-1/92 Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M547 6A SURFACE MOUNT TUNING DIODES - f - o T - l 0» The 1M series tuning diodes are electronically variable capacitors packaged for surface mount assembly. Mounted

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

TRIAC bt 824

Abstract: BT 804 triac BT 806 TRIAC TRIAC BT 812 TRIAC BT 804 TLP250 application TLP503 TLP501 TLP250 mosfet gate Driver circuit dc motor speed control with s.c.r bt 151
Contextual Info: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral