DIODE K IV Search Results

diode super fast

Contextual Info: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor

diode ja8

Contextual Info: ESJA88 6kv, 8 k V K * J E S a y - i* - K • «•»■ + * : Outline Drawings HIGH VOLTAGE SILICON DIODE s * iiW t t # ii* - ^ K s * E K * * - f* - K T T o E S JA 8 8 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa

MIB57TA-J

Abstract: MIB57TA-K
Contextual Info: MIB57TA-J MIB57TA-K CRO DESCRIPTION INFRARED EMITTING DIODE 04.98 ' 0.196 MIB57TA-J and MIB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 ,r (0 .04) //* // ft ^ - 1 w \\ \>k #1.8 ? \\ 0.75(0.03)_

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

SHINDENGEN DIODE

Contextual Info: t - K 77+ '> + ;U 5 f'T ^ -K Super Fast Recovery Diode Axial Diode U ïW ^ïfèm OUTLINE DIMENSIONS D1NL40 400V 0.9A • e / ^ x # trr5 0 n s ffl « •SR «f mzpo-n-^iv 0m m . OA. »TO • a « . «¡s. f a • Æ tè H RATINGS Absolute Maximum Ratings h

LT 2806

Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Contextual Info: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS

MIB57TA-J

Abstract: MIB57TA-K
Contextual Info: CKO MIB57TA-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57TA-J and MIB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 ,r(0 .0 4 ) 05,8 (0.23} 0.75(0.03). °3)_J max.;. If 25.3 (0.93} 0.5

SHINDENGEN DIODE

Contextual Info: ' >3 7 h U T 7 K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M 60V 3A • T j 150'C ? V ? y ÿ - L fitW •P h h k m • ] • S .4 0 R U — » § • D C /D C •m m , • a « K J y / K - 9 y - A . 0A«âs , MÏÏfèm RATINGS Absolute Maximum Ratings

Contextual Info: v a -y V J 7 & 4 * - K 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS D5SC4MR C ase : ITO -220 40V 5A • T jl5 0 t! • P rrsm 7 G V ' > i S i K • 7 J IÆ -J U K •S R S S •D C /D C D > K -^ • * Æ , V - h . OAtSÜ m •aa. • Æ fê g l

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

ESJA92

Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Contextual Info: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

Contextual Info: y a 7 h Surface Mounting Device U T7# -< % — K Schottky Barrier Diode _ Twin Diode IWJfê vhÆE] OUTLINE DIMENSIONS DF20SC9M 90V 2QA KEUM •S M D •T j 150t; #Phhsm Tl K^ y' J i S à l •SR» • D c /D c _ iv n - ÿ • * « . y -A . 0A «ü •aïs.

Contextual Info: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë

Contextual Info: Schottky Barrier Diode Single Diode W tm SF5S4 40V OUTLINE fk K g IB M Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [ Æ - J U K • Full Molded • Dielectric Strength 2kV • l Ë S I f f i 2 kV S ï l

Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

DCP100

Abstract: X9522 X9522B20I-A X9522B20I-B
Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

X9522

Abstract: X9522B20I-A X9522B20I-B
Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

DCP100

Abstract: X9522 X9522B20I-A X9522B20I-B
Contextual Info: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

SHINDENGEN DIODE

Contextual Info: ' > 3 7 S ^ r/'Î U 77 ^ V ^ — K v -o m Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS D30SC4M C ase : ITO -3P 40V 30A 1 • T j 15 0 ’C •PnnSM T \ ' ^ y - y z I S s ì •B :£ 7 J IÆ -;U K m & D © •S R S * •D C /D C n > A -$ ' m mmm. ? - k . oAmm

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.— i> Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D180SC4M 40 V 180 A Ib J u - l • À ü ï i ' i - ll> • f f iV F •e jc ô '/jv ïïu F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ iL — S' •

Contextual Info: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings