DIODE K261 Search Results

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

K2614

Contextual Info: TOSHIBA TENTATIVE 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L^ tt-M O S V 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

k2617

Abstract: IT05191
Contextual Info: 2SK2617LS Ordering number : EN5443B N-Channel Silicon MOSFET 2SK2617LS General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage

K2617

Abstract: 2SK2617 2SK2617LS ENN5443A
Contextual Info: Ordering number : ENN5443A 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Low Qg. unit : mm 2078C [2SK2617LS] 10.0 4.5 2.8 0.6 16.1 16.0 3.5 7.2 3.2 1.2 1.2 14.0 3.6

Contextual Info: 2SK2618ALS Ordering number : ENA0360 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.

k2617

Contextual Info: 2SK2617ALS Ordering number : ENA0361 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

k2617

Abstract: 2SK2617ALS
Contextual Info: 2SK2617ALS Ordering number : ENA0361A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

k2618

Abstract: 2SK2618ALS 2SK2618 IT1084
Contextual Info: 2SK2618ALS Ordering number : ENA0360B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.

k2617

Abstract: 2SK2617LS EN5443C
Contextual Info: 2SK2617LS Ordering number : EN5443C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617LS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

k2618

Abstract: 2SK2618ALS 2SK2618 IT1084
Contextual Info: 2SK2618ALS Ordering number : ENA0360A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2618ALS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting.

k2617

Abstract: 2SK2617ALS ENA0361B IT1084
Contextual Info: 2SK2617ALS Ordering number : ENA0361B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)

K2610

Abstract: transistor k2610 Toshiba K2610 k2610 toshiba 2SK2610 SC-65 K-261
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)

Contextual Info: 2SK2614 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK2614 Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.032 Ω (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

k2610 toshiba

Abstract: toshiba transistor k2610 K2610 transistor k2610 K261
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs|= 4.4 S (typ.)

K2611

Abstract: transistor k2611 toshiba transistor k2611 toshiba K2611 K2611 toshiba INFORMATION ON K2611 K261-1 transistor Toshiba K2611 2SK2611 k2611 Transistor
Contextual Info: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

k2610 toshiba

Abstract: K2610 transistor k2610 Toshiba K2610 toshiba transistor k2610 2SK2610 SC-65 DIODE 436
Contextual Info: 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs|= 4.4 S (typ.)

toshiba transistor k2611

Abstract: K2611 toshiba K2611 transistor k2611 K2611 toshiba transistor Toshiba K2611 k2611 Transistor INFORMATION ON K2611 K261-1 k2611 a
Contextual Info: 2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

K2134

Abstract: transistor k314 3225 K30 Transistor k221 NEC K2134 K43E ricoh fb5 front panel cn30 transistor bipolar k72 K294 K1MMZZB00002
Contextual Info: ORDER NO. CPD0309020C1 Notebook Computer CF-29 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-29CTKGZ1M 1: Operation System D: Microsoft Windows® 2000 K: Microsoft® Windows® XP Professional 2-1 LASER SAFETY INFORMA TION

K2614

Abstract: 2SK2614 K261
Contextual Info: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV 2SK2614 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance

Contextual Info: 2SK2614 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2614 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.032 Ω (typ.) High forward transfer admittance

toshiba k2613

Abstract: K2613
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)

2SK2613

Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
Contextual Info: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)