DIODE L 2 . 71 Search Results

st 95160

Contextual Info: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S

Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

Contextual Info: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D

IRF7322D1

Abstract: IRF7807D1 MS-012AA
Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

IRF7321D2

Contextual Info: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2

Contextual Info: PD- 91667D IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2

IRF7422D2

Abstract: MS-012AA
Contextual Info: PD- 91412M IRF7422D2 FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

IRF7101

Abstract: IRF7421D1 diode schottky 117c
Contextual Info: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D

IRF7422D2

Contextual Info: PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8 2 7 3 6 4 5 A A D VDSS = -20V D RDS on = 0.09Ω

Contextual Info: ADVANCED P ow er Te c h n o l o g y 2 1 CH !—O 1 - Cathode 2 -Anode Back of Case - Cathode APT30D30B 300V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode •Switchmode Power Supply -Inverters • Free Wheeling Diode

c9v diode

Abstract: 6914 sot23 Marking f7 c9v 57 KDV1430
Contextual Info: KDV1430 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C2V/C9V=3.7ᴕ5.0 E B L L ᴌLow rS : rS=0.5ή Max. . 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ)

Contextual Info: A tn aN C E D POW ER Te c h n o l o g y 1 - Cathode 2 - Anode Back o f Case - Cathode APT30D60B 600V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE L. PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters

A5 sot-23 single DIODE

Abstract: smd diode a5 A5 sot-23 DIODE smd marking diode pack BAV74 SOT-23 A5 330 marking diode smd diode marking JA sot-23 marking 415 sot23
Contextual Info: Transys Electronics L I M I T E D SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode ABSOLUTE MAXIMUM RATINGS Rating Per Diode

Contextual Info: A dvanced P o w er Te c h n o l o g y 8 Back of Case -Cathode - APT30D40S - 1 400V 30A 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: FAST RECOVERY DIODE 30KF50E 30KF50B 33A/500V/trr:70nsec F EA TU R ES I5.9l.626l T 15.3s 60-1 / 3 . 4 l . 'i 5 4 D IA 5 3 .209) 4 71.185) 5.3 1 2 0 9 ) ~i I*“ *! X i ° Similar to TO - 247AC Case 4TT.IS5> ° Ultra - Fast Recovery f ; r .7 t.2 2 4 l 5 .3 (2 0 8 )

1CHX

Abstract: 7228A bi phase modulator
Contextual Info: Series 71, 12 Bit Digital and Series 72 Analog l-Q Vector Modulators Both Series comprise a family of four solidstate PIN diode l-Q Vector Modulators covering the frequency range from 0.5 to 18 GHz in four bands; 0.5 to 2 GHz, 2 to 6 GHz, 4 to 12 GHz and 6 to 18 GHz. See Fig. 1.

2-GT-44

Abstract: 2-GT-35 2-GT-31 2GT30
Contextual Info: LINEARIZED, VOLTAGE CONTROLLED, ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE SER IES 2-GT 0.25-18 GHz G E N E R A L INFORMATION: KDI/Triangle pin diode attenuators continu­ ously change the amplitude of a microwave signal by applying a varying

Contextual Info: MOTOROLA Order this document by MGP7N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP7N60ED In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 7.0 A @ 90°C

DD-37

Contextual Info: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double

Contextual Info: 1SS277WT BAND SWITCHING DIODE Applications • Low loss band switching in VHF television tuners • Surface mount band switching circuits PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 L Top View Marking Code: "L" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC

chn 702

Abstract: chn 090 LMSW43LA-215 VC-2R diode fr 207
Contextual Info: Microwave Modules RF Diode Switches RF Diode SW with Integrated LPF 1.8+0 2 0 . 7 t0 2 r o l 2 (3) U U U - □ n r \ M a n ufa ctu re r's N am e Code (1 ) : R x (2)(4)(8) . GN D (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2 i r a 0 351:0.2 1 .2 7 *0 1 LMSW43LA-215

Contextual Info: A dvanced P o w er Te c h n o l o g y ' 1 - Cathode 2 -Anode Back of Case-Cathode APT30D60S 600V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters

Contextual Info: ADVANCED P o w er Te c h n o l o g y 1 - Cathode 2 -Anode Back of Case - Cathode APT15D60B 600V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters