Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065-Y
DocID026618
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L2 zener
Abstract: E30A23VPR E30A23VPS
Text: SEMICONDUCTOR E30A23VPS, E30A23VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 23V Typ. F1 POLARITY E30A23VPR (+ Type) (- Type) B L1 G E30A23VPS
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E30A23VPS,
E30A23VPR
E30A23VPS
L2 zener
E30A23VPR
E30A23VPS
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alternator diode
Abstract: alternator diode 50a E50A2CPS
Text: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)
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E50A2CPS,
E50A2CPR
E50A2CPS
100mA,
100mA
100ms
alternator diode
alternator diode 50a
E50A2CPS
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alternator diode 35a 9
Abstract: alternator diode alternator diode 35a
Text: SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Reverse Voltage : 200V Min. L2 F1 E35A2CPS (+ Type) L1 G POLARITY B E35A2CPR (- Type)
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E35A2CPS,
E35A2CPR
E35A2CPS
alternator diode 35a 9
alternator diode
alternator diode 35a
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50A ZENER
Abstract: 32V zener E50A37VPS alternator diode 50a alternator diode
Text: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES E Average Forward Current : IO=50A. Zener Voltage : 37V Typ. L2 F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS
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E50A37VPS,
E50A37VPR
E50A37VPS
100mA,
100mS
50A ZENER
32V zener
E50A37VPS
alternator diode 50a
alternator diode
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E30A37VPR
Abstract: E30A37VPS
Text: SEMICONDUCTOR E30A37VPS, E30A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 37V Typ. F1 POLARITY E30A37VPR (+ Type) (- Type) B L1 G E30A37VPS
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E30A37VPS,
E30A37VPR
E30A37VPS
E30A37VPR
E30A37VPS
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E30A2CPR
Abstract: E30A2CPS
Text: SEMICONDUCTOR E30A2CPS, E30A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V Min. POLARITY L2 E F1 E30A2CPS (+ Type) B L1 G E30A2CPR (- Type)
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E30A2CPS,
E30A2CPR
E30A2CPS
100mA
100mA,
100mS
E30A2CPR
E30A2CPS
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alternator diode
Abstract: zener diode f2 zener 1.7v F2 ZENER DIODE alternator diode 35a E35A21VPS
Text: SEMICONDUCTOR E35A21VPS, E35A21VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Zener Voltage : 21V Typ. L2 F1 POLARITY E35A21VPS (+ Type) B L1 G E35A21VPR (- Type)
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E35A21VPS,
E35A21VPR
E35A21VPS
100mA,
100mS
alternator diode
zener diode f2
zener 1.7v
F2 ZENER DIODE
alternator diode 35a
E35A21VPS
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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MMBD4148E
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE MMBD4148E SWITCHING DIODE WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + - 1. ANODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
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WBFBP-03A
MMBD4148E
WBFBP-03A
MMBD4148E
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate DIODE MMBD4148M SWITCHING DIODE WBFBP-03B TOP DESCRIPTION Epitaxial planar Silicon diode 1.2x1.2×0.5 unit: mm + - 1. ANODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package
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WBFBP-03B
MMBD4148M
WBFBP-03B
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Untitled
Abstract: No abstract text available
Text: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC6TH13TI
DocID024696
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Untitled
Abstract: No abstract text available
Text: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC10TH13TI
DocID024699
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Untitled
Abstract: No abstract text available
Text: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC8TH13TI
DocID024698
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B RB715Z 1.2x1.2×0.5 unit: mm Schottky barrier diode DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. ANODE 3.CATHODE FEATURES: Extra small power mold type.
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WBFBP-03B
WBFBP-03B
RB715Z
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DD3752
Abstract: No abstract text available
Text: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH
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bM275ES
DD37521
NDL5070
NDL5070
ABSOLUT520
GG37522
DD3752
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MDD 42-12-N1
Abstract: No abstract text available
Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms
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K21-0120'
K21-0120
K21-0180
K21-0265
DD165,
DD220
MDD 42-12-N1
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BAS29
Abstract: BAS31 BAS35 l21 diode marking
Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B AS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.48 0.38
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BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
BAS29
l21 diode marking
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