DIODE L48 Search Results
DIODE L48 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE L48 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching |
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SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, | |
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Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching |
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SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, | |
L4804A
Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
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SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V | |
DIODE 200A 600V schottky
Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
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SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode | |
SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
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SIDC00D60SIC2 SIDC00D60SIC2 Q67050-A4201sawn Q67050-A4201unsawn L4834A, SDP02S60 SWITCHING DIODE 600V 2A A102 diode sdp02s | |
SPD06S60
Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
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SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, SPD06S60 diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode | |
SCHOTTKY 4A 600V
Abstract: DIODE 200A 600V schottky
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SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky | |
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Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching |
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SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, | |
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Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching |
Original |
SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161A1 Q67050-A4161A2 L4804A, | |
SPD06S60Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching |
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SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162A1 Q67050-A4162A2 L4814A, SPD06S60 | |
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Contextual Info: BAT54WS SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0714, Rev. B Green Products BAT54WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection |
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BAT54WS N0714, BAT54WS OD-323, MIL-STD-202, | |
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Contextual Info: L4833J Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4833J Voltage40 | |
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Contextual Info: L4834 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4834 Voltage40 | |
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Contextual Info: L4833H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4833H Voltage40 | |
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Contextual Info: L4842 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)2.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4842 Voltage60 | |
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Contextual Info: L4831H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)1.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4831H Voltage40 | |
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Contextual Info: L4856B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.9.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4856B Voltage90 | |
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Contextual Info: L4824 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin |
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L4824 Voltage24 | |
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Contextual Info: V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM datasheet flow BOOST 0 1200 V / 40 A Features flow 0 housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode |
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V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM V23990-P629-L48-PM V23990-P629-L49-PM | |
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Contextual Info: SHARP GL480/G L480Q/G L483Q Infrared Emitting Diode GL480/GL480Q GL483Q • Features 1. Narrow beam angle A0 : TYP. ± 13“ 2. Radiant flux ( e : MIN. 0.7m W at I f = 20m A ) 3. Compact, high reliability by chip coating (GL480Q/GL483Q) 4. Long lead type (GL483Q) |
OCR Scan |
GL480/G L480Q/G L483Q GL480/GL480Q GL483Q GL480Q/GL483Q) GL483Q) PT480) GL480Q/GL483Q | |
L4821AContextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
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SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A | |
L4821A
Abstract: SPD10S30 A101 SIDC03D30SIC2
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SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2 | |
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Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
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SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A, | |
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Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior |
Original |
SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, | |