DIODE LT 213 Search Results

LTL-213

Abstract: LTL-233 LTL-223 LTL-253 LTL-293 Diode 224
Contextual Info: r. i: E. C r: li, f •'*1 T -l % 5mm SOLID STATE LAMPS m\ LTU(-203 red: .v.".-.-. . * LTL-213 BRIGHT RED LTL223 HIGH EFFICIENCY RED LITE-ON INC 31E D i LTL-233 GREEN LTL-253 YELLOW LTL-293 ORANGE 11 553b3b7 0GG2047 2 I ILTN n r-< 4 \-z \ . FEATURES • LOW POWER CONSUMPTION.

Diode LT 213

Contextual Info: TAIW AN LIT ON E L E C T R O N I C L I T E W ? 41E D • flöBSb^S O Q O B M b S 43^ « T L I T LTl,-203 RED LTL-233 GREEN LtL-213 BRIGHT RED ; VLTL-223 m m 1FFR3ÏENCY R | ¡ V t W ' Ì P W I ^ -1 ' : r - v m ^ L \ FEATURES • LOW POWER CONSUMPTION. • HIGH EFFIC IE N C Y.

suncon 1000uf capacitor

Contextual Info: DEMO MANUAL DC2134A LTC4020EUHF High Power Buck-Boost Multi-Chemistry Battery Charger Description Demonstration circuit 2134A is a high power buck-boost multichemistry battery charger featuring the LTC 4020. The board will accept an input voltage between 15V and

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

VA-201

Abstract: teledyne crystalonics VA312 VA-200 VA-202 VA-203 VA-204 VA-205 VA-206 VA-207
Contextual Info: TELEDYNE ! m EÛE D COMPONENTS a=ilT b Q e OClQbbUa ? • -T-0“7-/9 H IG H V O L T A G E - H I Q | VARACTRON V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S VA200-213 GEOMETRY 415 • ALL EPITAXIAL C O N S TR U C TIO N P + N N + • 1SO V O LTS DC RATING (M W V )

GE-SPCO Statte rower component Malvern

Abstract: ge 142 6rt2 A880 6rt217
Contextual Info: S3E D GE-SPCO • 3Ö7MSÖM GGOGIMS ^ 7 ^ « Û E S P A880 Statte row er Component tm eràtion M aívenuPA USA 'V- of-Z.3 77mm RECTIFIER DIODE 4500 V L2900A- The A880 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by

GDD2074

Abstract: SM04PCN013 westcode diode
Contextual Info: UESTCÔD E SEMI CO ND UC TOR S ITE D • GGGSO?! T ■ T'-0 3 - J 7 Technical Publication WESTCODE @ SEMICONDUCTORS DF 13 Issue 1 February 1981 Fast Recovery Stud-Base Diode Type PCN/PCR013 12 amperes average: up to 400 volts V RRM Ratings Maximum values at Tj 150°C unless stated otherwise

diode LT 1n4007

Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­

Diode IR 1254

Abstract: GA200TS60U
Contextual Info: PD -5.058B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA200TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

1N1183A

Abstract: 1N1185A 1N2128 1N2129 1N2130 R3605 R3610 S3605 S3610 S3615
Contextual Info: I Series 36 II Avalanche Silicon Power RcctifivTS ELECT RIC A L C H A R A C T E R IS T IC S : M a x im u m A v e r a g e F o rw a rd C urren t, S in g le P h a se H a lf W a v e D C R a tin g a t 121° C. C a se T em p era tu re . 6 5 a m p eres M a x im u m S u r g e C u rre n t

cd4541 application

Abstract: ic 4541 cd4541 4541 Timer si4435 2N3906 LT1505 MBRS140 MMSD4148T1 cd4541 timer
Contextual Info: advertisement Simple Li-Ion Charge Termination Using the LT1505 Design Note 244 Mark Gurries The LT1505 provides a logic signal output called “FLAG” that is intended to help implement a Li-Ion charge termination mechanism. In the constant voltage portion of the

DM74LS123N

Abstract: DM74LS123 DM74LS123M LS123 M16A N16E
Contextual Info: LS123 £ 2 National Semiconductor DM74LS123 Dual Retriggerable One-Shot with Clear and Complementary Outputs General Description The DM74LS123 is a dual retriggerable monostable multivi­ brator capable of generating output pulses from a few nano­ seconds to extremely long duration up to 100% duty cycle.

CQF58

Abstract: 1550 laser diode cd laser diode ingaasp 1550 laser diode
Contextual Info: Philips Components _ A D E V E L O P M E N T DATA c q f s s /d _ T h is data sh e e t c on ta in s a dvance inform ation and sp e cifica tio n s w h ic h a re su b je ct to c h a n g e w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

Contextual Info: TIL181 OPTOCOUPLER D 2 9 0 6 , OCTOBER 1 9 8 5 -R E V IS E D MARCH 1 98 8 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio

Contextual Info: MITSUBISHI Neh POWER MOSFET FS20UM-6 HIGH-SPEED SWITCHING USE FS20UM-6 OUTLINE DRAWING D im e n sio n s in mm « • Vdss . 300V • TDS ON (MAX) Î- G A T E DRAIN 3;.: S O U R C E 4) O R AiN

BUZ45A

Contextual Info: / = T SG S -TH O M S O N * 7 M m M § [ R I G J Ï Ï O M O BUZ45A ( g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss BUZ45A 500 V ^DS(on 0.8 fi •d 8.3 A • HIGH V O LT A G E - FO R OFF-LINE S M P S • U LT R A FAST SW ITCHING FO R O PERATIO N

CMPZ4686

Abstract: zt 213 CMPZ4678 CMPZ4679 CMPZ4680 CMPZ4681 CMPZ4682 CMPZ4683 CMPZ4684 CMPZ4685
Contextual Info: Central CMPZ4678 THRU CMPZ4717 Semiconductor Corp. 350m W LOW LEVEL ZENER DIODE 5% TOLERANCE DESCRIPTION: The C EN TR AL SE M IC O N D U C TO R CMPZ4678 Series Silicon Zener Diode is a high quality voltage regulator designed for applications requiring an extrem ely low

Contextual Info: AH5009/AH5010/AH5011/AH5012 a National Semiconductor AH5009/AH5010/AH5011/AH5012 Monolithic Analog Current Switches • ■ ■ ■ ■ General Description A versatile family ot monolithic JFET analog switches eco­ nomically fulfills a wide variety of multiplexing and analog

Contextual Info: DFB54 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4219 - 2.4 Supersedes Septem ber 1996 version, DS4219 - 2.3 KEY PARAMETERS v RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Q r APPLICATIONS • Pow er Supplies. ■ Freewheel Diode. ■ Battery C hargers. ■

Diode LT 213

Abstract: semikron thyristor
Contextual Info: SEMIKRON V rsm V rrm 420 A SEMIPACK 3 Thyristor/ Diode Modules 250 A SKKT213 SKKT 253 dv/dt cr Itrms (m axim um valu e s fo r continuous operation) 370 A V drm V /jis I 420 A I Itav (sin. 180; 250 A case = 85 °C V V SKKT SKKT 900 800 500 213/08 D 253/08 D

multicolor led 2-pin

Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Contextual Info: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

diamond sx 600

Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Contextual Info: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13