capacitor 1000uf 6.3V
Abstract: FDS6670A FDS7760A LMK316F106ZL LTC1929 BAT54A capacitor 1000uf 10uF 16V Electrolytic Capacitor capacitor 1000uf 63v CEP-14
Text: advertisement PolyPhase Surface Mount Power Supply Meets AMD AthlonTM Processor Requirements with No Heat Sink – Design Note 216 Craig Varga Introduction With the introduction of AMD’s Athlon processor, the supply current requirement for a desktop PC’s processor
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DN215
50mV/DIV
DN216
1-800-4-LINEAR.
dn216f
capacitor 1000uf 6.3V
FDS6670A
FDS7760A
LMK316F106ZL
LTC1929
BAT54A
capacitor 1000uf
10uF 16V Electrolytic Capacitor
capacitor 1000uf 63v
CEP-14
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capacitor 1000uf 6.3V
Abstract: LMK316F106ZL 12V 40A voltage regulators 12v 30A regulator BAT54A FDS6670A FDS7760A LTC1929 5V 40A DESIGN POWER SUPPLY capacitor 1000uf 63v
Text: advertisement PolyPhase Surface Mount Power Supply Meets AMD AthlonTM Processor Requirements with No Heat Sink – Design Note 216 Craig Varga Introduction With the introduction of the AMD Athlon processor, the supply current requirement for a desktop PC’s processor
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DN215
50mV/DIV
DN216
1-800-4-LINEAR.
dn216f
capacitor 1000uf 6.3V
LMK316F106ZL
12V 40A voltage regulators
12v 30A regulator
BAT54A
FDS6670A
FDS7760A
LTC1929
5V 40A DESIGN POWER SUPPLY
capacitor 1000uf 63v
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CD104-100MC
Abstract: PC401 solder mask wakefield 1371 LT1371 LT1371CR TPSD226M025R0200 Linear Technology 401 high frequency converter DC093
Text: DEMO MANUAL DC093 NO-DESIGN SWITCHER DEMO MANUAL DC093 LT1371 5V to 12V Step-Up Converter DESCRIPTIO U Demonstration board DC093A is a complete DC/DC stepup switching regulator using the LT 1371 constant frequency, high efficiency converter in a 7-pin DD package.
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DC093
LT1371
DC093A
PC-401
CD104-100MC
PC401 solder mask
wakefield 1371
LT1371CR
TPSD226M025R0200
Linear Technology 401
high frequency converter
DC093
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MC14511
Abstract: CL-80 display lt 313 UTC LCD driver
Text: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The
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MC14511
MC14511
QW-R502-021
CL-80
display lt 313
UTC LCD driver
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14511B
Abstract: display lt 313 mc14511b of mc14511b MC14511BCP
Text: MC14511B BCD−To−Seven Segment Latch/Decoder/Driver The MC14511B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4−bit storage latch, an 8421
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MC14511B
MC14070B
MC14511B
14511B
display lt 313
of mc14511b
MC14511BCP
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MC14511 application note
Abstract: mc14511 display lt 313 QW-R502-021 UTC LCD driver Gas-Discharge Display Segment Driver HTL LOGIC bcd to seven segment circuit diagram COUNTER LED bcd MC14070B
Text: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The
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MC14511
MC14511
QW-R502-021
MC14511 application note
display lt 313
UTC LCD driver
Gas-Discharge Display Segment Driver
HTL LOGIC
bcd to seven segment circuit diagram
COUNTER LED bcd
MC14070B
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cd4541 application
Abstract: ic 4541 cd4541 4541 Timer si4435 2N3906 LT1505 MBRS140 MMSD4148T1 cd4541 timer
Text: advertisement Simple Li-Ion Charge Termination Using the LT1505 Design Note 244 Mark Gurries The LT1505 provides a logic signal output called “FLAG” that is intended to help implement a Li-Ion charge termination mechanism. In the constant voltage portion of the
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LT1505
LT1505
Si4412
MBRS140
MMSD4148T1
2N3906
DC243
cd4541 application
ic 4541
cd4541
4541 Timer
si4435
2N3906
MBRS140
MMSD4148T1
cd4541 timer
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thyristor tt 250 n 16
Abstract: thyristor TD 25 N ot 3000 DI 210 dt61n dt250n
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
0DD21Ã
/M6x15Z4-1
thyristor tt 250 n 16
thyristor TD 25 N
ot 3000
DI 210
dt61n
dt250n
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ITT DIODE 210
Abstract: 81 210 W 20 TD92N ITT DIODE 128 dt61n dt250n IC 7476
Text: Thyristor Diode Modules for Current Source Inverters rrm V, V rrm V It r m sm A D iode (Thyr.) Its m lT A V M /tc V (T O ) rT (di/dt) cr V m£2 ^vj max A /°C 180° el sin ^vj max ^vj max A/(js DIN IEC 747-6 9,8 60/85 0,80 3,40 0,85 J ¡2dt kA2s kA 10 ms,
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3403ET7
/M6x15Z4-1
ITT DIODE 210
81 210 W 20
TD92N
ITT DIODE 128
dt61n
dt250n
IC 7476
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t333b
Abstract: ks52
Text: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax
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KS52450310
T-33-35
S52450310
S52450310
t333b
ks52
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Untitled
Abstract: No abstract text available
Text: Û13bb71 0 D0 L S3 Û _ 4 24 SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol | Conditions Values Units 600 400 300 600 - 4 0 . + 150 2500 300 600 2160 23,4 V V A A °C V A A A kA2s 18 30 75 V V kV/ is °C 1) IGBT & Inve rse Diode V ces Operating DC link voltage
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13bb71
3bb71
362GD060
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c1251c
Abstract: Driver 314 ctv 314 driver
Text: s e M IKRO n SKiiP 342 GD 120 - 314 CTV Absolute Maximum Ratings Symbol |Conditions11 Values Units 1200 900 300 - 4 0 . . . + 150 3000 5 300 600 2160 23,4 V IGBT & Inverse Diode V ces V cc 9) lc T j3’ Visol 4) If I fm I fsm f t Diode) Operating D C link voltage
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Conditions11
Tj000
c1251c
Driver 314 ctv
314 driver
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1N 3000 DIODE
Abstract: 14R7 Scans-0017298 general electric
Text: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling
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ET-T745
1N 3000 DIODE
14R7
Scans-0017298
general electric
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Untitled
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol |Conditions 1 Values Units 1700 1200 250 - 4 0 . + 150 4000 250 500 2160 23,4 V IGBT & Inverse Diode VcES Vcc 91 lc T j3) V jgo l 4 ' If If m If s m l2t Diode) Operating D C fink voltage
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Untitled
Abstract: No abstract text available
Text: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces
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fll3bb71
0Q05G55
613bb71
QQ05Q01
0GQ50G3
00G5D04
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IRF645
Abstract: IRF646 IRF644 100AH IRF647 Rf644 IFIF644 IFIF646
Text: _ Rugged Power MOSFETs File Num ber 2169 IRF644, IRF645, IRF646, IRF647 Avalanche Energy Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE 14A, and 13A, 275V, 250V rDS on = 0.280, 0 .3 4 0 Features: • Single pulse avalanche energy rated
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IRF644,
IRF645,
IRF646,
IRF647
IRF647
IRF645
IRF646
IRF644
100AH
Rf644
IFIF644
IFIF646
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th 2167
Abstract: sw 13001
Text: Ordering number : ENN6901 N-Channel Silicon MOSFET MCH3412 ISAÊlYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resinstance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2167 [M C H 3 412 ] 0.15, 4 l l ip — 0.65
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ENN6901
MCH3412
900mm2X0
th 2167
sw 13001
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irkt 132
Abstract: IRKT THYRISTOR THYRISTOR MODULE irkt 132 12 irkt 40 D267 DIODE
Text: International H Rectifier SERIES IRK.F72 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package
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irkt 132 12
Abstract: No abstract text available
Text: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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4B55452
S545E
JDDlb74b
irkt 132 12
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th 2167
Abstract: No abstract text available
Text: 1 Ordering number : ENN6911 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2167 [M C H 3 409 ] 0 . 15 . 1 : G ate 2 : Source
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ENN6911
MCH3409
th 2167
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Untitled
Abstract: No abstract text available
Text: C o n d itio n s 1> Viso, 4 AC, 1min Operating / stor. tem perature /— >I Q Sym bol 0—I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 250 -40.+150 250 500 2160 23 A °C A A A kAs2 IGBT and Freewheeling Diode
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Untitled
Abstract: No abstract text available
Text: C o n d itio n s 1> vV ¡sol 4> AC, 1 min —I Operating Q Sym bol —I o o SKiiP 3-phase bridge Absolute Maximum Ratings / SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 300 -40.+150 300 600 2160 23 V V A °C A A A kAs2 18 30 20 75 V V kHz kV/us stor. tem perature
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intelligenX13:
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode •¿m H OUTLINE D4L20U 200V 4A F eatu re • Low Noise • tnr=35ns • Full Molded • s v -rx • trr=35ns M ain Use • • • • • 7 5 '1 'T n - J L / * ^ .O A J .S • ii f f i. F A Switching Regulator Fly Wheel
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D4L20U
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE FS3VS-9 Dimensions in mm OUTLINE DRAWING » . t . . '•Jj . 2 J .3' _ . . O .2 A * "fr Ö -w CO c\i 1 "2 I 4 GATH DRAIN SOURCE DRAIN • V o ss .450V
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O-220S
1CH23
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