DIODE LT N5 Search Results

Diode LT n5

Contextual Info: I HITACHI 2 S B 1 1 6 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER e 13X X I Raw 2. "»iiçtwir (Fiaogci .V Knww Í[jiríten\í<>n5; <r. null (JEDEC TO-2ZOAB) I ABSOLUTE MAXIMUM RATINGS ,Ta=25*C) Item 2SB1 106 Symbol Unit Collector to to«: voltage

OPB861N

Abstract: OPB861N51 OPB861N55 transistor TIP 320
Contextual Info: E *Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS O PB 861 N51/OPB 861 N55 PACKAGE DIMENSIONS DESCRIPTION Th e O PB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

flyback transformer pin configuration

Abstract: LT1072 design manual Zener diode with 9v FOR POWER SUPPLY Zener diode with 9v zener diode snubber networks amplifier 9v a 500v 3.6v zener diode 500V voltage regulator ethernet transformer Application Note flyback transformer pin
Contextual Info: r DESIGN 1NOTES • V ^ a T illiT T iE F I T iB ■fflVJI IIHILVANA A TEC H N O LO G Y February, 1990 Number 31 in a series from Linear Technology Corporation Isolated Power Supplies for Local Area Networks Sean Gold Circuit Design Introduction Local Area Netw orks such as Eth ernet or Cheapernet™ , re­

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

transistor J 3305-1

Abstract: BR2045 LT1103CT LT1508 MO53
Contextual Info: r r u n m _ l t i i o 3 / l t i i o 5 TECHNOLOGY O fflin e S w itc h in g R e g u la to r FCRTURCS D C S C R IP TIO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1103 Offline Switching Regulator is designed for high input voltage applications using an external FET

impatt diode

Abstract: impatt DIODE n57 varian
Contextual Info: >•} V 439805 '7 5 À 0 2 8 0 I VAR I AN ELECTRON Ufc V LL t 0 7 - ./ Series GALLIUM AR SE NI DE P U L S E D IMP ATT DIODES 8-15 GHz 15W, peak FEATURES OU TLI NE DRAWING C A S E N57 • High peak output - 15 W at 9 GHz • 14 W at 11 GHz 10 W at 1 4 GHz

multicolor led 2-pin

Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Contextual Info: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .

SE227

Contextual Info: LTC1143/LTC1143L LTC1143L-ADJ u f m TECHNOLOGY d UQ| High Efficiency SO-16 Step-Down Switching Regulator Controllers FCRTURCS DCSCRIPTIOn • Dual Outputs LTC1143, LTC1143L: 3.3V, 5V LTC1143L-ADJ: Dual Adjustable ■ Very High Efficiency: Over 95% Possible

s1g 28 diode

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP60N06LT, PHB60N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

diamond sx 600

Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Contextual Info: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13

lt1064

Contextual Info: / T l l MTECHNOLOGY t A B _Bsssa |_ow Noise, 8th Order, Clock Sweepable Elliptic Lowpass Filter FC A TU A C S D € S C R IP T IO n • 8th O rd e r Filte r in a 14-Pin Package T h e LTC 10 6 4 -1 is an 8th order, clo ck sw eepable elliptic ■ N o Exte rn a l C o m p o n e n ts

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP50N06LT, PHB50N06LT SYMBOL • ’T r e n c h ’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics

CTX02-13483

Abstract: MBR0540TL1 lt1105
Contextual Info: LT1425 Isolated Flyback Switching Regulator F€flTUR€S D€SCRIPTIOn • No Transform er “Third W ind in g ” or Optoisolator Required ■ ± 5 % Accurate Output Voltage W ithout User Trim s See Circuit Below The LT 1425 is a monolithic high power switching regu­

1RF9130

Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Contextual Info: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id

Mosfet T460

Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
Contextual Info: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «

diodo zener 5v

Abstract: IN5815 IN5808 IN5809 diodo m1 63 diodo 72 diodo Lz 66 in5806 test leads IN5812 1N5663
Contextual Info: Zener Type No. Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im p ed a n ce Sp e cifie d N o S u ffix = 1 0 % S u ffix A = 5 % Power Rating 1,500 wat s Device Package 1N5663 1N5663A 1N5664 1N5664A 170.0

T77b

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor L o g i c level F E T PHP55N03LT, PHB55N03LT, PHD55N03LT SY M B O L F E A TU R ES QUICK RE FE R E N C E DATA V dss - 25 V • ’Trench’ technology

45n03lt

Abstract: t428 P45N03LT T428 7r hd45n t428 diode t428 transistor t428 fet 03lt
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP45N03LT, PHB45N03LT, PHD45N03LT QUICK RE FE R E N C E DATA Vdss = 30 V ’Trench’ technology

UDN5722

Abstract: A7900 UDN-5722M A7626 UDN5722M
Contextual Info: SPRAGUE/SENICOND GR OU P TE 8514 01 9 SPRAGUE^ S E M I C O N D S / ICS D • Ô S 1 3 0 S O □ □ □ 2 b clcï □ 92D 02699 ■ 7^ SERIES U D N -5 72 0 M , U D N -5 74 0 M , U D N-5750 M DUAL PERIPHERAL/POWER DRIVERS D 5 3 -0 SERIES UDN-5720M, UDN-5740M, UDN-5750M

Contextual Info: Bulletin 127401 rev. A 09/97 International lO R Rectifier i r k .soo. s e r i e s THYRISTOR / DIODE and THYRISTOR/THYRISTOR SUPER MAGN-A-pak Power Modules 500 A F eatures • High current capability ■ 3 0 0 0 V nMS isolating v o lta g e with n o n-toxic substrate

Diode LT n5

Contextual Info: Modules GS Series AW Version The GS Series reduces switching noise by use of an improved free-wheeling diode. Features • High speed and low saturation voltage • Low noise due to built-in free-wheeling USFD Ultra Soft and Fast Recovery Diode • Isolated heatsink between terminal and base

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r e l i m i n a r y speci f i cat i on T r e n c h M O S transistor Logic level FET PHP69N03LT, PHB69N03LT, PHD69N03LT SY M B O L F E A TU R ES QUICK RE FE R E N C E DATA Vdss = 25 V • ’Trench’ technology

Contextual Info: ACT 3 3.3 Volt Field Programmable Gate Arrays F eatu res • 3.3V Functionality specifications fully compliant with JEDEC Replaces up to 250 TTL Packages Replaces up to 100 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic Placement and Routing

t428 fet

Abstract: t428 transistor t428 t428 diode 03LT
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET SY M B O L F E A TU R ES • • • • • • PHP42N03LT, PHB42N03LT, PHD42N03LT QUICK RE FE R E N C E DATA V dss = 30 V ’Trench’ technology