DIODE MARKING 100-10 N2 Search Results

siemens siferrit N27

Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
Contextual Info: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed 0.4 +0.1 –0.05 0.16 +0.1 –0.06 +0.1 0.65 –0.15 for DC-DC converter and 2.5 V drive switching applications.

marking ya

Abstract: N2500N-T1B-AT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1

SOT1118

Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

9930gm

Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Contextual Info: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter

Contextual Info: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPZ-N27 1. Scope The present specifications shall apply to an SJPZ-N27. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 090615 1／4 SANKEN ELECTRIC CO., LTD.

Contextual Info: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Contextual Info: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: 020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

TRANSISTOR SMD MARKING CODE QR

Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

DFN2020-6

Contextual Info: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: P-CHANNEL MOSFET
Contextual Info: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

Contextual Info: ESAlpha Low Resistance Plastic Packaged PIN Diodes SMP1322 Series Features • Designed for High Performance Wireless Switch Applications ■ Specified 1.5 0, @ 1 mA ■ Multiple Package Configurations Description The SMP1322 series of plastic packaged, surface

N6 marking diode

Abstract: zener diode n8 n2 Diode Zener diode marking N9 M7 zener diode MARKING CODE N0 Marking N8 ZENER DIODE n2 sod marking m7 cmoz8l2
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

N6 marking diode

Abstract: SOD marking N1 diode marking N9 MARKING CODE N0 zener diode n8
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

smd diode ZENER marking code J3

Abstract: smd zener diode code J1 smd zener diode code D5 Zener diode smd marking code w1 Zener diode smd marking h5 Zener diode smd marking e2 smd code C2 zener diode SMD ZENER DIODE E1 Diode smd code f4 smd zener diode code k2
Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRW5221B-G Thru CZRW5267B-G Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly

smd zener diode code J1

Abstract: Zener diode smd marking h5 Zener diode smd marking code w1 smd diode ZENER marking code J3 Zener diode smd marking e2 SMD ZENER DIODE E1 smd zener diode code h2 Zener diode smd marking J5 smd zener diode code D5 smd zener diode code k2
Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRW5221B-HF Thru CZRW5267B-HF Voltage: 2.4 to 75 Volts Power: 500 mWatts RoHS Device Features Halogen free. SOD-123 For surface mounted applications. 0.152 3.85 0.140(3.55) 500mW Power Dissipation. Ideally suited for automated assembly