DIODE MARKING 26 Search Results
DIODE MARKING 26 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC |
![]() |
DIODE MARKING 26 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
|
Original |
BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19 BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR | |
BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
|
Original |
BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19LT1 sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
|
Original |
1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
|
Original |
1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
|
Original |
1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no. |
Original |
1N5408 | |
Contextual Info: <s SC311 0.5A Outline Drawing FAST RECOVERY DIODE I Marking • Surface mount device • High voltage by mesa design • High reliability I - CATHODE MARKING - SYMBOL • HC 1 14 Applications • High speed switching - MONTH |
OCR Scan |
SC311 PartNoSC311-4 SC311-6 | |
Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of |
Original |
CDA8S03G 10Volts OT-23) MDS0903007A | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
Original |
VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
Original |
VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
VBUS05L1-DD1-G-08Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking |
Original |
VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VBUS05L1-DD1-G-08 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
Original |
VBUS051BD-HD1 LLP1006-2L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below) |
Original |
VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking |
Original |
VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
|||
MARKING KE2Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2 |
Original |
MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, DS31039 MARKING KE2 | |
MMBZ5221BS
Abstract: MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2
|
Original |
MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, MMBZ5257BS MMBZ5258BS DS31039 MMBZ5223BS MMBZ5225BS MMBZ5226BS MMBZ5227BS MMBZ5228BS MMBZ5229BS MMBZ5259BS KE2 diode ZENER A2.2 | |
DIODE A6
Abstract: BAS16X
|
Original |
BAS16X OD-523 OD-523 100uA 150mA 10mAdc DIODE A6 BAS16X | |
Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code |
Original |
VBUS051BD-HD1 LLP1006-2L AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 | |
Contextual Info: Diode Network / ESD Suppressor COMCHIP SMD DIODE SPECIALIST CDA4S14G RoHS Device Voltage: 13 Volts Current: 50 mA Package (SOT-143) Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal |
Original |
CDA4S14G OT-143) MDS0903003A | |
BAS116Contextual Info: BAS116 3 Silicon Low Leakage Diode Low-leakage applications Medium speed switching times 2 Single diode 1 1 VPS05161 3 EHA07002 Type BAS116 Marking JVs Pin Configuration 1=A 2 n.c. 3=C Package SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage |
Original |
BAS116 VPS05161 EHA07002 EHB00054 Aug-20-2001 EHB00055 BAS116 | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D793 PESDxS2UQ series Double ESD protection diode Product specification 2003 Dec 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UQ series FEATURES MARKING • Uni-directional ESD protection of two lines or |
Original |
M3D793 RS232 PESD12VS2UQ SCA75 R76/01/pp10 | |
Contextual Info: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage |
Original |
SMBD914/MMBD914. SMBD914/MMBD914 | |
ja1020Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel |
OCR Scan |
14-099R Q62702-A0042 OT-143 14-099R 070I2 ja1020 | |
Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and |
Original |
CDA6N08G MDS0903005A |