DIODE MARKING 47N Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum

Lovoltech

Abstract: POWERJFET LS1105 jfet transistor LVT103 lovoltech no diode jfet application LVT101 LVTS101 LVTS101N
Contextual Info: PWRLITE-LS1105N Enhanced N-Channel Power JFET Transistor, Trench Technology Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “High Side” Buck and DC-DC Converters Low Rg and low Cds for high speed switching

TLI4961-1L

Abstract: smd hall effect sensor TLI4961-1 PG-SSO-3-2
Contextual Info: TLI4961-1L TLI4961-1M Hall Effect Latch for Industrial Applications Data Sheet Revision 1.1, 2012-10-15 Sense & Control Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

47N60S1

Abstract: 47N60 n channel mosfet 300v 80a SCHEMATIC ups FMH47N60S1 FUJI DATE CODE IRP10 fuji electric lot code
Contextual Info: / FMH47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6

LTC4359CMS8

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

IN751a

Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current

47N60S1

Abstract: FMW47N60S1 FMW47N60S1HF n channel mosfet 300v 80a FMW-4
Contextual Info: / FMW47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg

FDS3732

Abstract: 3b transistor
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current

a/TDA 8309

Abstract: CMZ5928B CMZ5920B CMZ5915B
Contextual Info: LT8309 Secondary-Side Synchronous Rectifier Driver Features Description Works with DCM and BCM/CrCM Conduction Mode Flyback Topologies n V : 4.5V to 40V CC n Supports Up to 150V MOSFETs n 26ns Turn-Off Propagation Delay n Accurate Minimum On and Off Timers for Reliable

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

Circuit diagram of 12v 1W LED driver

Abstract: 12V 1W LED DRIVER r4 4.7k 4148 diode 3W LED
Contextual Info: Advanced Power Electronics Corp. APE1832 2A, 0.25V FEEDBACK VOLTAGE STEP-DOWN SWITCHING REGULATORS FOR LED DRIVER FEATURES DESCRIPTION APE1832 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal PMOS and

PG-SOT-23

Abstract: TLI4961-1M
Contextual Info: TLI4961-1M High Precision Hall Effect Latch for Industrial Applications Data Sheet Revision 1.0, 2012-07-26 Sense & Control Edition 2012-07-26 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

IDTP9090

Contextual Info: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V  Peak MOSFET Drive current into 3nF • LGDRV Sink 3A  LGDRV Source 1A  UGDRV Sink

marvell 88EM8081

Abstract: TS321LT Led driver schematic 12v 6A flyback
Contextual Info: Cover 88EM8080/88EM8081 LED Power Supply Controller for Flyback Converters with Power Factor Correction Datasheet Customer Use Doc. No. MV-S106340-01, Rev. B August 6, 2010 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8080/88EM8081

Date Code Marking STMicroelectronics

Abstract: STMicroelectronics DIODE marking code STMicroelectronics marking code date STMicroelectronics marking code date diode LDP24AS Date Code Marking STMicroelectronics diode
Contextual Info: LDP24AS  TRANSIL LOAD DUMP PROTECTION FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637 DESCRIPTION

88EM8081

Abstract: TS321LT 88EM8080 marvell 88EM8081 Led driver schematic nonisolated led driver 0.1uF capicitor 11 kv vfd 88 Marvell qdeo
Contextual Info: Cover 88EM8080/88EM8081 LED Power Supply Controller for Flyback Converters with Power Factor Correction Datasheet Customer Use Only Doc. No. MV-S106340-01, Rev. C August 27, 2010 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8080/88EM8081

Irf 1540 G

Abstract: Irf 1540 irf 30A HFA16PB120 IRFP250
Contextual Info: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI

Contextual Info: PD -95686 HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI

Contextual Info: LDP24AS TRANSIL LOAD DUMP PROTECTION . . . FEATURES TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE COMPLIANT WITH MAIN STANDARDS SUCH AS: -ISO / DTR 7637

4321F

Abstract: TG12 LT432
Contextual Info: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and

47N60S5

Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
Contextual Info: SPW47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated

47N60S5

Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
Contextual Info: SPW47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity