DIODE MARKING 53 Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: 300mAmps Surface Mount Fast Switching Diode Mechanical Dimension BAV16WS Description SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit 100 V 75 V VR RMS 53 V Forward Continuous Current

Q62702-B0825

Contextual Info: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

B824 transistor

Abstract: transistor B824 B824 Q62702-B824
Contextual Info: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53

diode marking 53

Abstract: marking VB DIODE
Contextual Info: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C

Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)

Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)

VBUS05L1-DD1-G-08

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)

Contextual Info: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

ves05991

Abstract: SCD-80
Contextual Info: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W

Contextual Info: BBY 53-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage VPS05176 Type Marking Pin Configuration Package BBY 53-03W

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

diode T3 Marking

Abstract: maxim CODE TOP MARKING diode marking code maxim
Contextual Info: SIEMENS BBY 53-03W Silicon Tuning Diode Prelim inary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking O rdering Code Pin Configuration

Q62702-B0862

Abstract: diode T3 Marking diode marking AU
Contextual Info: BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation 2 for VCO’s in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Ordering Code

Contextual Info: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

Q62702B

Abstract: marking L
Contextual Info: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

sot143 marking code u1s

Contextual Info: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAS16W

Abstract: MMBD4148W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

ka2 DIODE

Abstract: BAS16T
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate DIODE MMBD4148T/BAS16T SWITCHING DIODE SOT-523 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking MMBD4148T: KA2, BAS16T:A2

Contextual Info: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code