DIODE MARKING 737 Search Results

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C

A6 sot-23

Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Contextual Info: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol

1N7039CCT1

Abstract: 1n703 12CGQ150 12CLQ150 16CYQ150C 1N7039CCU1 1n7039 1n7047
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 January 2011. INCH-POUND MIL-PRF-19500/737A w/AMENDMENT 1 1 October 2010 SUPERSEDING MIL-PRF-19500/737A 5 December 2007 PERFORMANCE SPECIFICATION SHEET

MARKING 358 sot-23

Abstract: diode schottky sot-23 marking l44 sot-23 marking 34 diode SCHOTTKY diode marking 45 schottky diode bat54 l44 sot-23 Marking L43 BAT54 BAT54A BAT54C
Contextual Info: BAT54- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAT54 Marking: LV3 BAT54A Marking: B6

schottky diode marking A7

Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Contextual Info: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7

226 capacitor SMT

Abstract: H737
Contextual Info: HMC737LP4 / 737LP4E v00.1108 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls

H737

Contextual Info: HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls

361 Zener diode marking

Abstract: marking code zener diode wl Fr 9888 Zener diode marking 361 zener sod-323 marking code 06 BZT52C3V3S BZT52C3V6S BZT52C4V3S BZT52C4V7S BZT52C5V6S
Contextual Info: Diode, Zener Features: • • • • SOD-323 Planar Die Construction. Ultra-Small Surface Mount Package. Ideally suited for Automated Assembly Processes. Also Available in Lead Free Version. Dimensions Minimum Maximum A 2.30 2.70 B 1.60 1.80 C 1.20 1.40

Contextual Info: HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!

selector guide 74HC 74HCT FAMILY

Abstract: 74HC03D
Contextual Info: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications • The IC06 74HC/HCT/HCU/HCMOS Logic Package Information • The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines 74HC/HCT03

C3D04060E

Abstract: CREE C3D04060
Contextual Info: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

C4D02120E

Abstract: c4d02120
Contextual Info: C4D02120E–Silicon Carbide Schottky Diode Z-Rec Rectifier Features • • • • • • IF, TC<135˚C = 6.9 A Qc = 15 nC 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

c4d02120

Abstract: C4D02120E CSD04060 D0212
Contextual Info: C4D02120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • Package 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation

TO-220 package thermal resistance

Abstract: C3D02060
Contextual Info: C3D02060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • • • = 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

rectifier diode 3A

Contextual Info: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

marking D03

Contextual Info: C3D04060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage

Contextual Info: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

fdb fairchild

Abstract: FDP6670S FDB6670S
Contextual Info: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: C4D08120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM IF,TC<135˚C = 12 A Qc Features • • • • • = 49 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: C3D03060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

c4d10120

Abstract: C4D10120E TO-252-2
Contextual Info: C4D10120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF, = 16 A TC<135˚C Qc Features • • • • • = 66 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

CSD04060

Abstract: C4D08120
Contextual Info: C4D08120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 7.5 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF

c4d10120

Abstract: CSD04060
Contextual Info: C4D10120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 10 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior