DIODE MARKING 78A Search Results

BAW78M

Abstract: SCT595 78-AD
Contextual Info: BAW78M Silicon Switching Diode 4
Switching applications 5
High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage

SCT-595

Abstract: 78-AD
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: BGX400. Silicon Switching Diode
Switching applications
High breakdown voltage
Halfbridge rectifier BGX400 3 D 1 D 2 1 2 Type BGX400 Package SOT23 Configuration halfbrigde Marking GXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol

a1 sot23

Abstract: BGX400
Contextual Info: BGX400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

Q62702-A3471

Abstract: SCT-595
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings

a1 sot-23

Contextual Info: BGX 400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

diode 78a

Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
Contextual Info: BAS78A.BAS78D Silicon Switching Diodes
Switching applications 4
High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C

diode 78a

Abstract: 78ad VPS05163 SOT 78B BAS 16 MARKING DIODE marking 78A marking 78ad
Contextual Info: BAS 78A . BAS 78D Silicon Switching Diodes • Switching applications 4 • High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS 78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT-223 BAS 78B BAS 78B 1=A 2=C 3 = n.c. 4 = C

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

silent relay

Abstract: H3AA012 CQC 24vdc relay datasheet H3 marking CSA22 EN61810-1 FTR-H3AA012V VDE0435 FUJITSU RELAY 5 pin relay 6vdc
Contextual Info: FTR-K1 SERIES SILENT POWER RELAY 1 POLE - 78A/120A Inrush Current Type FTR-H3 Series n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Silent relay with patented unique U-shape spring. Noise level ≈ 50dB at 5cm. l Low profile height 18.8 mm / cadmium free contacts

DIODE marking 78A

Abstract: FTR-K1
Contextual Info: FTR-K1 SERIES SILENT POWER RELAY 1 POLE - 78A/120A Inrush Current Type FTR-H3 Series n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Silent relay with patented unique U-shape spring. Noise level ≈ 50dB at 5cm. l Low profile height 18.8 mm / cadmium free contacts

VDE 0435 time relay

Abstract: ED 78A relay vde 0435 DIODE marking ED 78A datasheet for 14 PIN 120VAC relay DIN 3021 STANDARD H3 marking CSA22 FTR-H3AA005V FTR-H3AA009V
Contextual Info: SILENT POWER RELAY 1 POLE— 78A/120A INRUSH CURRENT TYPE FTR-H3 SERIES RoHS compliant n FEATURES Pin compatible with widely used VS and FTR-H1 series power relays l Ultra silent relay with patented unique U-shape spring. Noise level is about 50dB at 5cm.

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Diode CK 78A

Abstract: ck 78a
Contextual Info: POWER RELAY 1 POLE - 16A LOW PROFILE TYPE FTR-K1 Series • FEATURES ● ● ● ● ● ● ● Low profile height: 15.7mm HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV HEAT RESISTANCE, FLAMMABILITY

FDD6676A

Abstract: FDD6676AS
Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

TV-5 18VDC

Abstract: FTR-K1CK012W FTR-K1AK028T TV-5120VAC CK005
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 16A LOW PROFILE TYPE RoHS compliant FTR-K1 Series n FEATURES Low profile height: 15.7mm l HIGH ISOLATION5 Insulation Distance (between coil and contacts: 10mm min.) Dielectric strength: 5KV Surge strength: 10KV l Class F coil

IRFB30

Abstract: AN-994
Contextual Info: PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt

FDD6644

Abstract: FDD6644S
Contextual Info: FDD6644S 30V N-Channel PowerTrench MOSFET General Description Features The FDD6644S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDD6676S

Abstract: FDS6676S
Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

ci 4946

Abstract: IRG7PH42UD-EP irg7ph42ud-e IRG7PH42UDPBF
Contextual Info: PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient