DIODE MARKING 7N Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1   * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested  1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1   FEATURES * RDS ON < 1.6Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  TO-220F TO-220 DESCRIPTION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

7N65G

Abstract: 7N65L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=500V Min.  Low gate charge: Qg=7nC (Typ.)  Low drain-source On resistance: RDS(on)=3.4Ω (Max.)  100% avalanche tested  RoHS compliant device

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70-M Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N70-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7NM70 Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7NM70 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7NM65 Preliminary Power MOSFET 7A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 7NM65 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70-R Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65K-MTQ Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 7N90-MK6 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

R0813

Abstract: CSD02060G csd02060 q 406 813 CSD02060A D02060
Contextual Info: CSD02060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF AVG = 2A Qc Features • • • • • • • = 7nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: SM MK02 260IS S Advan nced N-Ch Po ower MOSFE ET SW WITCHIN NG REG GULATO OR APPLICATIO ON Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=600 0V Min. • Low gate charge: c Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω Ω (Typ.)

KIC7SU04FU

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC7SU04FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT INVERTER B1 C D G H T FEATURES • • • • • • • High Speed : tPd=7ns Typ. at Vcc=5V. Low Power Dissipation : Icc=ljuA(Max.) at Ta=25°C. High Noise Immunity : V n ih = V n il = 2 8 % VCc(Min.).

C2MOS

Abstract: MARKING J1A marking j5a KIC7S08FU
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC7S08FU SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 2-INPUT AND GATE DIM 2.0 0 + 0 .2 0 Al 1 .3 ± 0 .1 B 2 .1+ 0.1 B1 1 .2 5 + 0 .1 C D G FEATURES • • • • • • • H T High Speed : tpci=7ns Typ. at Vcc=5V.