DIODE MARKING 89A Search Results

TC2004

Abstract: TC106 GC106 GC2005 GC107 TC307 TC2003 TC2005 MMBD1702 TC2006
Contextual Info: Surface Mount Switching Diodes Part No. TMPD6050 BAV70 BAV99 BAW56 BAV74 TMPD2835 MMBD1701 MMBD1702 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A BB804 BB814 BB824 CrossReference Marking Code Max. Cont. Reverse Current Maximum Diode Capacitance

sot-23 marking code sf

Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
Contextual Info: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.

1705

Abstract: A1705 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 A1703 TA 1705 F
Contextual Info: MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 NC 1 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 1703 2 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 2 3 3 1704 2 3 1 2 1 1705 2 High Conductance Low Leakage Diode

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF − Wettable Flanks Product

Contextual Info: PD - 9.1370C IRL3705N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.01Ω G Description ID = 89A… S Fifth Generation HEXFETs from International Rectifier

IRL3705N

Abstract: irf 9246 IRF 870
Contextual Info: PD - 9.1370C IRL3705N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.01Ω G Description ID = 89A… S Fifth Generation HEXFETs from International Rectifier

irl3705

Abstract: IRF 934 IRL3705N
Contextual Info: PD - 9.1370C IRL3705N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.01Ω G Description ID = 89A… S Fifth Generation HEXFETs from International Rectifier

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBD1701

Abstract: MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 a1705 marking 05 SOT 89
Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

v4841

Abstract: NVMFS4841NT1G JESD51-12
Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*

Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices

Contextual Info: NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N−Channel SO8FL Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices

smd diode 87a

Abstract: bv smd diode MMBD1703 cd 810 transistor marking NA 85 A1703 smd 85a
Contextual Info: Diodes SMD Type High Conductance Low Leakage Diode MMBD1701/A,MMBD1703/A MMBD1704/A,MMBD1705/A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

ed 89a

Abstract: AN-994 IRL3705N IRL3705NL IRL3705NS ED 89A marking code
Contextual Info: PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3705NSPbF IRL3705NLPbF l l HEXFET Power MOSFET

ED 89A diode

Abstract: ED 89A marking code
Contextual Info: PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3705NSPbF IRL3705NLPbF l l HEXFET Power MOSFET

5050 ir led

Abstract: 5050 led driver gs 069 J 601 marking 865 marking code fg AN-994 IRL3705N IRL3705NL IRL3705NS
Contextual Info: PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3705NSPbF IRL3705NLPbF l l HEXFET Power MOSFET

1502B transistor

Abstract: LSE 405 marking F53 1502B AN-994 IRL3705N IRL3705NL IRL3705NS
Contextual Info: PD - 9.1502B IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V

IRL3705NL

Abstract: IRL3705NS AN-994 IRL3705N
Contextual Info: PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V

AN-994

Abstract: IRL3705N IRL3705NL IRL3705NS
Contextual Info: PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V

AN-994

Abstract: IRL3705N IRL3705NL IRL3705NS
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-180-52 IRL3705NS HEXFET D2Pak PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology

Contextual Info: PD - 91502C IRL3705NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V

IRF710

Contextual Info: PD-9.327J International S Rectifier IRF710 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 400V ^D S on = 3 - 6 0 lD = 2.0A Description DATA SHEETS