DIODE MARKING B2 Search Results
DIODE MARKING B2 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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CUZ8V2 |
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Zener Diode, 8.2 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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MUZ5V6 |
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Zener Diode, 5.6 V, USM |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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DIODE MARKING B2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 | |
MARKING KE2Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2 |
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MMBZ5221BS MMBZ5259BS 200mW OT-363 OT-363, MIL-STD-202, DS31039 MARKING KE2 | |
Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages: |
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O-252 60747and 20110721a | |
IXYS DSA 12Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages: |
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O-252 60747and 20110721a IXYS DSA 12 | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS | |
DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
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DSEP6-06BS Recti10 60747and 20110915a DIODE MARKING CODE B3 DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2 | |
Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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DSEP6-06BS 60747and 20110915a | |
E72873
Abstract: VUB116-16NOXT
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116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips |
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DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS | |
Contextual Info: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9 Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions |
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SDP410Q OD-523 KSD-E003-002 | |
diode marking b2
Abstract: SDP410D
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SDP410D OD-323 KSD-C003-000 100MHz diode marking b2 SDP410D | |
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SDP410QContextual Info: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions |
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SDP410Q OD-523 KSD-E003-002 SDP410Q | |
SDP410DContextual Info: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit : mm |
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SDP410D OD-323 KSD-C003-000 100MHz SDP410D | |
DPG10I300PAContextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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60747and 20090323a DPG10I300PA | |
SDP410Q
Abstract: diode marking b2
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SDP410Q OD-523 KSD-E003-001 100MHz SDP410Q diode marking b2 | |
CT-815
Abstract: marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815
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Q62702-B240 CT-815 marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815 | |
03866
Abstract: 07062
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60747and 20090323a 03866 07062 | |
400QBContextual Info: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips |
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400QB 60747and 400QB | |
Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration |
OCR Scan |
3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323 | |
h2 markingContextual Info: ERB43 0.5A ( 200 to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics 種07. |
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ERB43 ERB43 h2 marking | |
sod-323 diode MARKING CODE 4Contextual Info: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter |
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200mW OD-323 BAT42WS BAT43WS sod-323 diode MARKING CODE 4 |