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    DIODE MARKING CODE 2T Search Results

    DIODE MARKING CODE 2T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE 2T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    connectors

    Abstract: No abstract text available
    Text: CONNECTORS | CONNETTORI version 110125 For electrovalves, style A, 2p+2G, female, Per elettrovalvole, stile A, 2p+2T, femmina, with cable con cavo EN175301-803 style A square connector, former DIN 43650-A , ISO 4400; built-in gasket; wide cable choice; single head or extension cable;


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    PDF EN175301-803 3650-A) connectors

    33H8R

    Abstract: No abstract text available
    Text: CONNECTORS | CONNETTORI version 110125 For electrovalves, style A, 2p+2G, female, Per elettrovalvole, stile A, 2p+2T, femmina, with cable con cavo EN175301-803 style A square connector, former DIN 43650-A , ISO 4400; built-in gasket; wide cable choice; single head or extension cable;


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    PDF EN175301-803 3650-A) 33H8R

    avago marking bk

    Abstract: AVAGO MARKING E4 AN1124 MARKING 313 sc70 part marking ab sc-70 marking b5 sc70 marking code e5 sot363
    Text: HSMS-281x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifica­tions and package con­figura­tions to


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    PDF HSMS-281x HSMS281x OT-323 SC70-3 OT-363 SC70-6 5989-4021EN AV02-1367EN avago marking bk AVAGO MARKING E4 AN1124 MARKING 313 sc70 part marking ab sc-70 marking b5 sc70 marking code e5 sot363

    ESD8V0L2B03L

    Abstract: 2I k INFINEON marking infineon marking information
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) • Smallest form factor 1.0 x 0.6 x 0.4 mm


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    PDF IEC61000-4-2 IEC61000-4-4 ESD8V0L1B-02LRH ESD8V0L2B-03L ESD8V0L1B-02LRH* ESD8V0L2B-03L* ESD8V0L2B-03LRH* ESD8V0L2B03L 2I k INFINEON marking infineon marking information

    INFINEON marking

    Abstract: diode Marking Code b3 BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 TSLP
    Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)


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    PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 INFINEON marking diode Marking Code b3 BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 TSLP

    DNA 30 E 2200 PA

    Abstract: marking 55 485 DNA30E2200 DNA30E2200PA
    Text: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.28 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    PDF O-220 DNA30E2200PA O-220AC 60747and DNA 30 E 2200 PA marking 55 485 DNA30E2200 DNA30E2200PA

    Untitled

    Abstract: No abstract text available
    Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


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    PDF BAT64. BAT64 BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W

    Untitled

    Abstract: No abstract text available
    Text: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    PDF MMBT4403 MMBT4401) OT-23 2002/95/EC OT-323 OT-523

    DSI45-08A

    Abstract: DSI45 DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 VF800
    Text: DSI45-08A VRRM = I FAV = VF = Standard Rectifier Single Diode 800 V 45 A 1.23 V Part number DSI45-08A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DSI45-08A O-247 sine180° DSI45 60747and 20090529a DSI45-08A DSI45 DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 VF800

    DSI45

    Abstract: DSI45-08A DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 DSI45-16
    Text: DSI45-12A VRRM = I FAV = VF = Standard Rectifier Single Diode 1200 V 45 A 1.23 V Part number DSI45-12A 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DSI45-12A O-247 sine180° DSI45 60747and 20090529a DSI45 DSI45-08A DSI45-12A DSI45-16A DSI45-16AR ISOPLUS247 DSI45-16

    Untitled

    Abstract: No abstract text available
    Text: MMST4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available MMST4401 MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)


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    PDF MMST4403 MMST4401) OT-323 2002/95/EC OT-23 OT-523

    transistor MARKING CODE 2T

    Abstract: No abstract text available
    Text: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI • Lead Free in RoHS 2002/95/EC Compliant


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    PDF MMDT4403 OT-363 2002/95/EC OT-363 transistor MARKING CODE 2T

    DSP45-12A

    Abstract: DSP45-16A DSP45-16AR ISOPLUS247
    Text: DSP45-16A VRRM = 1600 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 DSP45-16A Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DSP45-16A O-247 sine180° 60747and 20090528a DSP45-12A DSP45-16A DSP45-16AR ISOPLUS247

    DSP45-16AR

    Abstract: DSP45-12A DSP45-16A ISOPLUS247 DSP4516A
    Text: DSP45-12A VRRM = 1200 V I FAV = 2x 45 A VF = 1.23 V Standard Rectifier Phase leg Part number 1 2 3 DSP45-12A Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop


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    PDF DSP45-12A O-247 sine180° 60747and 20090528a DSP45-16AR DSP45-12A DSP45-16A ISOPLUS247 DSP4516A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol


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    PDF Q62702-G38 OT-143 OU00007 fl235bD5 fi235bD5 0235bD5 Q122235

    smd code marking 777

    Abstract: BB155 SMD MARKING CODE 1C marking code pe
    Text: Philips Semiconductors Product specification Low-voltage variable capacitance diode BB155 FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance -n - • Very small plastic SMD package. APPLICATIONS Marking code: PE. • Voltage controlled oscillators


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    PDF BB155 BB155 OD323 OD323) 711002b smd code marking 777 SMD MARKING CODE 1C marking code pe

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    PDF Q62702-A0960 OD-123 EH007100 fl23Sb05

    DIODE S2v 73

    Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
    Text: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w


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    PDF S2V20 S2V20 S2V60 DIODE S2v 73 DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60

    marking 2U 58 diode

    Abstract: marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23
    Text: W Ljm H E W L E T T Bita P A C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface M ount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/ iW at 915 MHz up to 35 mV/nW at 2.45 GHz


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    PDF HSMS-2850 HSMS-2860 OT-23/ OT-143 260CC OT-23 marking 2U 58 diode marking 2U diode t5 marking code KE diode L31 diode sot-23 marking diode KE SOT23 MARKING KE AT-05 MARKING- L31 diode marking code 2U marking L31 SOT23

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28