DIODE MARKING DL Search Results

Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code

MA411

Abstract: YG811S09R
Contextual Info: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na

Fuji Electric SM

Contextual Info: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

Contextual Info: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips

Contextual Info: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips

Contextual Info: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol

marking DLA

Abstract: DIODE MARKING 534 Marking A2s marking 37 IM
Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

Contextual Info: SIEMENS Silicon PIN Diode BA 885 • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 M Hz. 2 GHz • Especially useful as antenna switch in TV-sat tuners ' Type Marking Ordering Code tape and reel BA 885

Contextual Info: SIEMENS Silicon Switching Diode BAR 99 • For high-speed switching Type Marking Ordering Code tape and reel BAR 99 JGs Q62702-A388 Pin Configuration Package1) SOT-23 o- » - o 3 1 EIUOOOOJ Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB640 • For Hyperband TV/VTR tuners, Bd I 1 Type BB640 Pin Configuration Marking Ordering Code tape and reel 1 2 Q62702-B589 C A red S . Package SOD-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

DIODE C04 06

Abstract: ERC04
Contextual Info: ERC04 1.2A (200V to 1000V / 1.2A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 4.0 ø 1.0 7.5 28 MIN. 28 MIN. Features Marking Wide voltage class High reliability Color code : Orange C04 Abridged type name Applications 02 Voltage class General purpose rectifier applications

Contextual Info: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings

B6U 80/100

Abstract: MARK UU1 ERC35 Marking code jSs marking code aj
Contextual Info: ERC35 2 .5A g ± 'J : Outline Drawings FAST RECOVERY DIODE * Features ‘ Marking S oft recovery, low noise A ? - 3 - V :» H igh reliability Color code : Silver Abridged type name : Applications %E9 5* AV-K-?-? Voltage class H igh speed sw itch in g . a -j Uto

t930

Abstract: ERA38 T151 T760
Contextual Info: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion

a124 es

Abstract: rkm v
Contextual Info: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class

yg801c

Contextual Info: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na

DLA60I1200HA

Contextual Info: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number DLA 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DLA60I1200HA

Contextual Info: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase

Contextual Info: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery

Contextual Info: SiC SCHOTTKY DIODE SML05SC06D3A / SML05SC06D3B • VR max = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ “E-MELF” Package † No Reverse Recovery No Forward Recovery

Contextual Info: DLA 20 IM 800 PC advanced V RRM = I FAV = VF = Standard Rectifier Single Diode 800 V 20 A 1.12 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour