DIODE MARKING EB Search Results

marking ya

Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Contextual Info: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH

SC802

Contextual Info: SC802-04 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

sc802

Contextual Info: SC802-04 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

transistor collector diode protection

Abstract: marking 720 transistor
Contextual Info: DTDG14GP Digital transistor, NPN, with resistor and Zener diode Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: DTDG14GP; E01 • in addition to standard features of digital transistor, this transistor has:

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

D1980

Abstract: diode marking F5
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated

d3s marking

Abstract: d3s diode DIODE marking S6 89
Contextual Info: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking

TRANSISTOR L 287 A

Abstract: 2SD2170 CE marking code diode sc-62
Contextual Info: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage

b1316

Abstract: B131-6
Contextual Info: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated

Contextual Info: _ ? ^ r i U JJ|^ l T r P Today’s Results.Tomorrow1! Vision I I •■ Revised - February 15, 1999 Low Capacitance TVS Diode For High-Speed Data Interfaces TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SL series of TVS arrays are designed to protect

Contextual Info: _ SMS05 j • ,■.» -.„ ,V r " " August 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

Contextual Info: _ SMS05C j • ,■.» - „ ,V r " " September 17, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SM S24C TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to

marking code s4 diode VISHAY

Abstract: marking EB 202 diode S4 DIODE schottky Vishay
Contextual Info: SD103AW - SD103CW VISHAY SCHOTTKY BARRIER SWITCHING DIODE I[l IT E M Il / p ow eb seh co nw icto r Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance H

PLVA656A

Abstract: PLVA650A PLVA600A PLVA653A PLVA659A PLVA662A PLVA665A PLVA668A
Contextual Info: bbsa^ai Philips S em iconductors [][]EbA37 704 H APX P roduct specification Low voltage avalanche diode PLVA600A ^ PHILIPS/DISCRETE FEATURES DESCRIPTION • Very low dynamic impedance at low currents The PLVA600A series are silicon planar high performance voltage

Contextual Info: » « M T E r H Preliminary - December 15, 1998 RailClamp Low Capacitance TVS Diode Array T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RaiiCiamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA70-4 has

Contextual Info: Actively Cooled Diode Laser Stack, Both Axes Collimated, cw SPL EBxx Only available in North America Features Applications • Both axes collimated linear stack, actively cooled, for cw operation • Highly reliable strained layer InGa Al As/GaAs material with MTTF life time > 10000 h

Contextual Info: ^ j| | \ y i " T " I I Low Voltage TVS Diode for ESD and Latch-Up Protection Preliminary - May 18, 1998 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor

diode sot 143 s5

Abstract: SEMTECH sot-143 LCDA12C-1
Contextual Info: rm JpjjS EMTEÇ H Low Capacitance TVS Diode Array TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com Novem ber S, 1999 DESCRIPTION FEATURES The LCDA12C-1 is a low capacitance transient voltage suppressor TVS diode array. It is designed to protect sensitive CMOS ICs from the damaging

pwm e-bike

Abstract: e-bike FSB67508 SPM10-AA mosfet motor dc 48v 15-V 95apd
Contextual Info: SPM FSB67508 TM Smart Power Module SPM Features General Description • RDS(ON).MAX=11mΩ @ ID=38A,TJ=25°C a half-bridge FRFET inverter including high voltage integrated circuit (HVIC) FSB67508 is a smart power module (SPM®) as a compact solution for small power motor drive applications such as Ebike. It is composed of 2 MOSFET, and 1 half-bridge HVIC for

Contextual Info: ^ S E M ^ “ T E C I- I X L .L E V n October 13, 1998 300W Surface Mount TVS Diode SDC15 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected

Contextual Info: SDC15 ^ “ X L .L E V n October 13, 1998 300W Surface Mount TVS Diode TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected to data and transmission lines from voltage surges

Contextual Info: B c p m t p c h • jp p - j March 18, 1999 RailClamp Low Capacitance TVS Diode Array SR05 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has

Contextual Info: ISI^ S E | \ / | T E Q | | ppPy x= r™„v,.,=n 400 Watt TVS Diode Array For Multi-Mode Transceiver Protection P relim inary-M arch 1, 1999 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn Today’s Results.Tom orrow1 ! Vision DESCRIPTION

diode SR 304

Abstract: POWER SUPPLY BOARD 94V0 120 how to test tvs diode Diode Marking WA sot143 usb tvs rectifier diode 2kv
Contextual Info: » wA « M T sR“'"“ E r H Preliminary - May 4, 1998 RailClamp Low Capacitance TVS Diode Array T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has