DIODE MARKING GC Search Results

Contextual Info: SC201 0.5A <§ FAST RECOVERY DIODE • O utline Drawing 121“ H Features Marking • Surface mount device • High voltage by mesa design • High reliability - CATHODE MARKING ■SYMBOL A-SYI I GA 14 j- H Applications • High speed switching

dALLAS MARKING CODE

Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

diode MARKING CODE GC

Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

2SC2012

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

marking code GC diode

Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

4060BE

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

diode marking GA

Abstract: marking GC diode 2SC2012 SC201 SC201-2 SC201-4 SC201-6
Contextual Info: SC201 0.5A • Outline Drawing f a s t r e c o v e r y DIODE I Features Marking • Surface mount device • High voltage by mesa design • High reliability -CATHODE MARKING ■SYMBOL I - Æ GA I Applications ■MONTH • High speed switching 14 - »

TC2004

Abstract: TC106 GC106 GC2005 GC107 TC307 TC2003 TC2005 MMBD1702 TC2006
Contextual Info: Surface Mount Switching Diodes Part No. TMPD6050 BAV70 BAV99 BAW56 BAV74 TMPD2835 MMBD1701 MMBD1702 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A BB804 BB814 BB824 CrossReference Marking Code Max. Cont. Reverse Current Maximum Diode Capacitance

nfi7

Abstract: marking A95 SC201 SC201-4 SC201-8
Contextual Info: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications

Contextual Info: SC201 0.5A Outline Drawing F A S T R E C O V E R Y DIODE 4 • Features Marking • Surface mount device • High voltage by mesa design - C A T H O D E M A R K IN G • High reliability I L2',t02 III| 14 /\L - S Y M B O L ga Applications

Contextual Info: IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ max = 150°C G GC VCE(ON) typ. = 1.9V @ IC = 25A E G Gate • Industrial Motor Drive

schottky diode marking A7

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-

Contextual Info: ZOWIE Low VF Rectifier Diode GC10DLH THRU GC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20JLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHs GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Low VF Rectifier Diode GC10DLH THRU GC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Compliance to RoHS product GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

marking code GC diode

Contextual Info: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage

Contextual Info: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto­

Contextual Info: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15

SOT89 marking GA

Abstract: BAW78B SOT89 marking GD BAW78C BAW78D Diode Marking C.3 diode 78a BAW78A BAW78 VPS05162
Contextual Info: BAW78A.BAW78D Silicon Switching Diodes 1
Switching applications 2
High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW78A GA 1=A 2=C 3 = n.c. SOT89 BAW78B GB 1=A 2=C 3 = n.c. SOT89 BAW78C GC 1=A 2=C 3 = n.c. SOT89

MA707

Abstract: marking GC diode GC marking diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA707 Silicon epitaxial planer type For UHF mixer Unit : mm INDICATES CATHODE ● Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● Mini package, enabling down-sizing of the equipment and automatic

ga sot-89

Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Contextual Info: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C

Contextual Info: ZOWIE Rectifier Diode 200V~1000V / 1.0A GC10DH THRU GC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage