DIODE MARKING L3 Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: <s SC211 0.8A Outline Drawing FAST RECOVERY DIODE I C\J L35t<M I Features I 2 MM. ! I ' c ,+ M ' I US 04 4 I I y fO * Marking • Surface mount device • High voltage by mesa design • High reliability CATHODE MARKING SYMBOL /- I Applications • High speed switching

philips bav23s

Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1999 May 05 2001 Oct 12 Philips Semiconductors Product specification General purpose double diode FEATURES BAV23S MARKING

Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages:

IXYS DSA 12

Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages:

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

DIODE MARKING CODE B3

Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

03866

Abstract: 07062
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

MARKING L31 SMD

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE

ultra fast recovery time diode 100ma

Contextual Info: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

SMD L31

Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

SMD L31

Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

MARKING L31 SMD

Abstract: BAV23S l31
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

Contextual Info: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design

Contextual Info: DSEP 6 Fast Recovery Epitaxial Diode FRED IFAVM = 6 A VRRM = 600 V trr = 20 ns Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA (DPAK) Cathode 6P060AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ①

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips