DIODE MARKING LG Search Results

BAS 16 MARKING

Abstract: marking A6s diode A6s sot 23 sot-23 MARKING A6S lg-330 lg330
Contextual Info: SIEMENS Silicon Switching Diode BAS 16 • For high-speed switching Type Marking Ordering Code tape and reel BAS 16 A6s Q62702-F739 Pin Configuration Package1) SOT-23 * 01-o 1 CHA07002 Maximum Ratings Parameter Symbol

Diode LT 02

Abstract: ERB83-006 T460 T760 T930
Contextual Info: ERB83-006 2A : Outline D raw ings SCHOTTKY BARRIER DIODE : Features • vF : Marking Low VF Ä7-3-K : £R Super high speed switching. Color code : •SÄJfcS High reliability by planer design Abridged type name Voltage cioss Oy rnq : Applications Lot No.

b83006

Abstract: diode schottky b83006 B83-006 diode b83
Contextual Info: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass

R8915

Abstract: ERC25 marking AJ 7
Contextual Info: ERC25 i .2A I W I W i i : Outline Drawings FAST RECOVERY DIODE : Features IR High voltage by mesa design. * Marking tf High reliability * 7 - n - r :W Color code : Green : Applications Abridged type name *V HiBE? 5* Voltage class High speed sw itching. - V -r-9

t930

Abstract: ERA38 T151 T760
Contextual Info: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion

S20LC60

Abstract: S20LC60US
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Twin Diode S20LC60US U n i t : 111111 Package : M TO -3P Weight x lg (T y p 600V 20A : Feature • High Voltage Super FRD •^ ¡Ü Œ F R D • Low Noise • trr=25ns • trr=25ns • 0jcöVJ'£U • Small ßjc

DIODE Sp marking code

Abstract: Cathode indicated by blue band diode Cathode indicated by blue band BA582 Cathode indicated by blue band marking code Cathode is indicated by a blue band marking code marking code sp
Contextual Info: PhH ip ^ em ico nd u rtors M 7 1 1 D f lg b DQbflg lB Tb? B iP H IN Product specification Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching applications in V H F TV tuners. The

smd marking YF

Abstract: K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr
Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : G1F DG1S6 Unit-mm Weight 0.01 lg Typ 60 V 1A 3.5 Feature H • iiS'JvüJSM D • Ultra-small S M D • i2 j® s y = 0 .8 m m • Ultra-thin PKG=0.8m m • < S V f = 0 .5 8 V • Low V f=0.58V

Contextual Info: fZ T S G S -T H O M S O N K lIO T M O lg l ] M S T T B 2 0 0 6 P(I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 20A V rrm 600V trr (typ) 55ns Vf K. 1.3V (max) FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

ByV schottky

Contextual Info: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

TMBYV10-20

Abstract: diode B05
Contextual Info: {Z T S G S -T H O M S O N * 7#. fflD tg œ iL IM O iO lg i T M B Y V 10-2 0 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode

IDTP9090

Contextual Info: High and Low Side N-Channel Gate Driver Product Datasheet IDTP9090 Features Description • Input Voltage Range: 4.5 to 5.5 • Output Voltage Range: Control Range 0-30V  Peak MOSFET Drive current into 3nF • LGDRV Sink 3A  LGDRV Source 1A  UGDRV Sink

50N6S2

Abstract: 50N6 FGH50N6S2 FGH50N6S2D LD26 TA49392
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices

50N6S2

Abstract: FGH50N6S2 FGH50N6S2D LD26
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices

TP10N

Contextual Info: w , ‘7 1 S G S -T H O M S O N IM Œ Œ lL iÊ T M M lg S Application Specific Discretes A.S.D. TH D T58S1 TH D T58S TRANSIENT VO LTAG E SUPPRESSO R FOR SLIC PROTECTION FEATURES • CROWBAR PROTECTION ■ DUAL ASYMMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT:

vishay siliconix code marking

Contextual Info: _ Sii 301 DL Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS(on) (£2) lD (mA) 3.8 e VGS = -4.5 V -180 5.0 9 VGs = -2 5 V -100 V DS(V) -20 Marking Code r LG XX £ Lot Traceability and Date Code

40N6S2

Abstract: FGB40N6S2 FGH40N6S2 FGH40N6S2D FGP40N6S2 LD26 TA49438
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay

40N6S2

Abstract: FGH40N6S2 FGH40N6S2D FGP40N6S2 TA49438 FGB40N6S2 FGB40N6S2T
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay

FGH60N6S2D

Abstract: 60N6S2 FGH40N6S2 FGH60N6S2 LD26
Contextual Info: FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices

FGH60N6S2D

Abstract: 60N6S2 FGH60N6S2 LD26
Contextual Info: FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices

FGH40N6S2

Abstract: FGH40N6S2D FGP40N6S2 LD26 TA49438 40N6S2 FGB40N6S2
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay

50n6s2

Abstract: TA49392 FGH50N6S2 FGH50N6S2D LD26 igbt full h bridge 25A 0640
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices

Contextual Info: A Product Line of Diodes Incorporated AP3591 SINGLE PHASE SYNCHRONOUS BUCK CONTROLLER Description Pin Assignments Top View TON 1 14 2 13 UGATE VOUT 3 4 FB 5 PGOOD EP 12 PHASE 11 CS 10 VDDP 6 9 LGATE 7 8 PGND The operation mode is selectable by EN voltage. A Diode Emulation

60N6S2

Abstract: FGK60N6S2D FGH40N6S2 FGH60N6S2 LD26
Contextual Info: FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices