DIODE MARKING R14 Search Results

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

BAS19LT1

Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

BAS20HT1

Abstract: marking code js sod323
Contextual Info: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

BAS21HT1

Abstract: marking code js sod323 diode marking code js sod323
Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current

BAS21HT1

Contextual Info: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200

29 0826

Abstract: L05 SOT23 marking code L05 SOT 23 sot-23 diode marking t3 SL05 SL05T1 SL05T3 SL15T1 SL15T3 SL24
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

marking code L05 SOT 23

Abstract: MARKING L05 marking l05 sot-23 SL05T1-D L05 SOT-23 sot-23 DIODE marking code t3
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

MARKING L05

Abstract: sot-23 MARKING CODE NC tvs MARKING CODE LAYOUT SOT23 marking code L05 SOT 23
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

SL05

Abstract: SL05T1 SL05T3 SL15T1 SL15T3 SL24 SL24T1 SL24T3 two line ESD Protection in SOT-23 TVS in SOT-23
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

diode marking r14

Abstract: DIODE MARKING CODE SOT236 DIODE T7 marking
Contextual Info: 05150 SRV05-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4 is a dual USB port protection array that features ultra low capacitance. This device can be used in applications such as video cards, SMART phones, Gigabit Ethernet and other computer interfaces. Designed for ESD

Contextual Info: EMIF09-SD01F3 IPAD 9 line EMI filter and ESD protection Main application • Secure digital memory card in mobile phones and communication systems Description The EMIF09-SD01F3 is a highly integrated array designed to suppress EMI/RFI noise for secure digital memory cards. The EMIF09-SD01F3 is in a

b2545

Abstract: B2545P MBR2545CTP
Contextual Info: MBR2545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature

B1545P

Abstract: b1545 MBR1545CTP
Contextual Info: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection

b16100

Abstract: MBR16100CT
Contextual Info: MBR16100CT SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 16 Amps Total 8.0 Amps Per Diode Leg Guard–Ring for Stress Protection

B4015L

Abstract: MBR4015CTL
Contextual Info: MBR4015CTL SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • Center–Tap Configuration Guardring for Stress Protection

B1545P

Abstract: mbr1545ctp
Contextual Info: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection

MBR6045WT

Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction – Terminals 1 and 3 May Be Connected for

B3045

Abstract: 1N5817 2N2222 2N6277 MBR3045PT
Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

3063B

Abstract: ic 3063B IRAM136-3063B IRAM136-3023B IRAM136-3063B2 IC OF 8873 free
Contextual Info: PD-97288 RevC Integrated Power Hybrid IC for High Voltage Motor Applications IRAM136-3063B Series 30A, 600V with Internal Shunt Resistor Description International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as

Contextual Info: PD-97288 RevC Integrated Power Hybrid IC for High Voltage Motor Applications IRAM136-3063B Series 30A, 600V with Internal Shunt Resistor Description International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as

b20100

Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
Contextual Info: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection

R750

Abstract: R756 MR756 R758 mr760 DIODE MR750 MR751 MR752 MR754 MR760
Contextual Info: MR750 SERIES MR754 and MR760 are Preferred Devices High Current Lead Mounted Rectifiers • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case http://onsemi.com Mechanical Characteristics: • Case: Epoxy, Molded

B3045

Abstract: MBR3045ST
Contextual Info: MBR3045ST Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected